DTC143TKA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DTC143T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R14.7kDTC143TM DTC143TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC143TE DTC143TUB

DTC143T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R14.7kDTC143TM DTC143TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC143TE DTC143TUB

DTC143T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R14.7kDTC143TM DTC143TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC143TE DTC143TUB

DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) CDim Min Max Built-In Biasing Resistor, R1 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data EBD 0.9

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143T seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143T seriesR1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

CHENMKO ENTERPRISE CO.,LTDCHDTC143TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil