DTC363EU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC363EU

Código: H27

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 6.8 kOhm

Resistencia Base-Emisor R2 = 6.8 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT-323 SC-70

 Búsqueda de reemplazo de DTC363EU

- Selecciónⓘ de transistores por parámetros

 

DTC363EU datasheet

 ..1. Size:76K  rohm
 dtc363eu.pdf pdf_icon

DTC363EU

Transistors Digital transistors (built-in resistors) DTC363EU / DTC363EK / DTC363ES FFeatures FExternal dimensions (Units mm) In addition to the features of regular dig- ital transistors, 1) Low VO(on) makes these transistors optimal for muting circuits. VO(on) = 40mV (Typ.) (IO/II = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA). FStructure NPN digital transistor (

 0.1. Size:76K  rohm
 dtc363ek dtc363eu-ek h27 sot323 346.pdf pdf_icon

DTC363EU

Transistors Digital transistors (built-in resistors) DTC363EU / DTC363EK / DTC363ES FFeatures FExternal dimensions (Units mm) In addition to the features of regular dig- ital transistors, 1) Low VO(on) makes these transistors optimal for muting circuits. VO(on) = 40mV (Typ.) (IO/II = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA). FStructure NPN digital transistor (

 0.2. Size:138K  chenmko
 chdtc363eugp.pdf pdf_icon

DTC363EU

CHENMKO ENTERPRISE CO.,LTD CHDTC363EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

 7.1. Size:139K  chenmko
 chdtc363ekgp.pdf pdf_icon

DTC363EU

CHENMKO ENTERPRISE CO.,LTD CHDTC363EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

MOSTRAR MÁS

Otros transistores... EMB3FHA, EMB4, EMB4FHA, DTC343TK, EMB3, DTC343TS, EMB2FHA, DTC363EK, 2SD718, DTD113EK, DTD113ES, DTD114EK, DTD114ES, DTD123EK, DTD123ES, DTD143EC, DTD143EK