F120A Todos los transistores

 

F120A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: F120A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 25 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3
 

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F120A Datasheet (PDF)

 0.1. Size:35K  microsemi
 msagz52f120a.pdf pdf_icon

F120A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

 0.2. Size:35K  microsemi
 msahz52f120a.pdf pdf_icon

F120A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220MSAGZ52F120AFAX: (714) 966-5256MSAHZ52F120AFeatures1200 Volts Rugged polysilicon gate cell structure high current handling capability, latch-proof52 Amps Hermetically sealed, surface mount power package Low package inductance3.2 Volts vce(sat) Very low thermal resistance Reverse polarity ava

 0.3. Size:88K  microsemi
 ppnhz52f120a.pdf pdf_icon

F120A

7516 Central Industrial DrivePPC INC.Riviera Beach, FL 33404PH: 561-842-0305PPNGZ52F120AFax: 561-845-7813PPNHZ52F120AFeatures Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistanceTO-258 Reverse polarity available upon request: PPNH(G)Z52F120

 0.4. Size:88K  microsemi
 ppngz52f120a.pdf pdf_icon

F120A

7516 Central Industrial DrivePPC INC.Riviera Beach, FL 33404PH: 561-842-0305PPNGZ52F120AFax: 561-845-7813PPNHZ52F120AFeatures Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistanceTO-258 Reverse polarity available upon request: PPNH(G)Z52F120

MOSTRAR MÁS

Otros transistores... F116 , F117 , F117A , F118 , F118A , F119 , F119A , F120 , A1266 , F121 , F121A , F122 , F122A , F123 , F123A , F124 , F124A .

History: SBCP53T1G | BFR72 | SRA2206EF | 2SA350A | 2SC2252 | BLX88 | 2SC1236

 

 
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