F124 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F124
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 25 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO53
Búsqueda de reemplazo de transistor bipolar F124
F124 Datasheet (PDF)
draf124x.pdf
DRAF124XTotal pages pageTentativeDRAF124XSilicon PNP epitaxial planar typeFor digital circuitsMarking Symbol : LFPackage Code : ML3-N4-BInternal ConnectionAbsolute Maximum RatingsTa = 25 CR1CParameter Symbol Rating UnitBCollector-base voltage (Emitter open) VCBO -50 VCollector-emitter voltage (Base open) VCEO -50 VCollector current IC -100 mAR2Total powe
draf124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124EDRA3124E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
draf124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF124TDRA3124T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
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