F2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KHB5D0N50P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB5D0N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 500V, ID= 5.0

KHB6D0N40P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB6D0N40PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for electronic ballast andBB 15.95 MAX

KHB7D0N65P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB7D0N65P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for active power factorBB 15.95 MAX

KHB2D0N60P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB2D0N60PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_avalanche characteristics. It is mainly suitable for switching mode A 9.9 + 0.2BB 15.95 MAXQpowe

KHB9D5N20P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D5N20PAOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for electronic ballast andBB 15.95 MAX

KHB019N20P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB019N20P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for DC/DC convertersBB 15.95 MAXQ

KHB3D0N90P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB3D0N90P1AOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2BB 15.95 M

KHB4D0N65P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D0N65PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for switch mode powerBB 15.95 MAXQ

KHB7D5N60P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB7D0N60P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorcorrection and switching mode power supplies.FEATURES VDSS

KHB9D0N50P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N50P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V

KHB4D5N60P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D5N60PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for switching modeBB 15.95 MAXQpow

KHB8D8N25P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB8D8N25PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Convertersand switching mode power supplies.FEATURES VDSS= 250V, ID= 8.8A

KHB4D0N80P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB4D0N80P1AOCThis planar stripe MOSFET has better characteristics, such as fastFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for electronic ballast andBB 15.95

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AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50L & AOB29S50L & AOTF29S50L &AOTF29S50 have been fabricated using the advanced IDM 120AMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15levels of performance and robustness in switching Qg,typ 26.6nCappl

EMF20B02VPChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:BVDSS20VRDSON(MAX.)20mID8.5APbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS12VTA=25C8.

Pyramis Corporation PFB2N60/PFF2N60The Silicon System Solutions Companywww.DataSheet4U.comPRELIMINARYN-Channel MOSFETApplications:Adaptor ChargerSMPS Standby PowerLCD Panel PowerVDSS RDS(ON) typical IDFeatures:600V 3.7 2.1A Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesOrdering In

FCPF250N65S3L1MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo

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FQP20N60/FQPF20N60600V,20A N-Channel MOSFETGeneral Description Product SummaryVDS700V@150The FQP20N60 & FQPF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06VL/DProduct PreviewMMDF2N06VLTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-2.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the p

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF284/DThe RF SubMicron MOSFET LineMRF284RF Power Field Effect TransistorsMRF284SNChannel EnhancementMode Lateral MOSFETsDesigned for PCN and PCS base station applications at frequencies from1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier30 W, 2000 MHz, 26 Vapplications. To be u

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF255PHT/DThe RF MOSFET LineMRF255RF PowerPHOTOMASTERField-Effect TransistorNChannel EnhancementModeCASE 21111, STYLE 2RFC1VGG VDD+ ++C5 C6 C15 C16 C17L5C7 C8DUTR2N2C14C4L3 L4N1 RFC1L1 L2RFOUTPUTINPUTC9 C10C11 C12C2 C3R1C1 470 pF, Chip Capacitor L1 8 Tu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF2P02HD/DDesigner's Data SheetMTSF2P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER FETwhich utilize Motorolas High Cell Density HDTMOS process to3.0 AMPERESachieve l

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P01Z/DProduct PreviewMMDF2P01ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate 2.0 AMPERESEZFETs are an advanced series of power MOSFETs which20 VOLTSutilize Motorolas High Cell Density TMOS process and co

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MFF224B/DThe RF Line550 MHz CATVMFF224BFeedforward AmplifierDesigned for broadband applications requiring lowdistortion amplification.Specifically intended for CATV market requirements. Two hybrid amplifiersalong with couplers and delay lines are packaged together to provide extremely24 dBlow distortion product

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2202PT1/DMMBF2202PT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energycon- rDS(on) = 2.2 OHMserving traits.These miniature surface mount MOSFETs uti

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF224/DRF TransistorNPN SiliconCOLLECTORBF22413BASE2EMITTERMAXIMUM RATINGS12Rating Symbol Value Unit3CollectorEmitter Voltage VCEO 30 VdcCASE 2904, STYLE 21CollectorBase Voltage VCBO 45 VdcTO92 (TO226AA)EmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 50 m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2201NT1/DMMBF2201NT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETrDS(on) = 1.0 OHMPart of the GreenLine Portfolio of devices with energycon-serving traits.These miniature surface mount MOSFETs

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2947/DThe RF LineNPN SiliconMRF2947AT1,T2MRF2947RAT1,T2Low Noise TransistorsMotorolas MRF2947 device contains two high performance, lownoise NPNsilicon bipolar transistors. This device has two 941 die housed in the highperformance six leaded SC70ML package; yielding a 9 GHz currentgainbandwidth prod

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P02HD/DDesigner's Data SheetMMDF2P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTSThese m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06V/DProduct PreviewMMDF2N06VTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-3.3 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the pre

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P02HD/DDesigner's Data SheetMMDF2P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTSThese m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2202PT1/DMMBF2202PT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFETPart of the GreenLine Portfolio of devices with energycon-rDS(on) = 2.2 OHMserving traits.These miniature surface mount MOSFETs

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2C02HD/DDesigner's Data SheetMMDF2C02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P01HD/DDesigner's Data SheetMMDF2P01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 12 VOLTSThese m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P03HD/DDesigner's Data SheetMMDF2P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 2.0 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF240/DThe RF LineNPN SiliconMRF240RF Power Transistors. . . designed for 13.6 volt VHF largesignal class C and class AB linear poweramplifier applications in commercial and industrial equipment. High Common Emitter Power Gain Specified 13.6 V, 160 MHz Performance:40 W, 145175 MHzOutput Power = 40 W

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P02E/DDesigner's Data SheetMMDF2P02EMedium Power Surface Mount ProductsTMOS Dual P-ChannelField Effect TransistorsDUAL TMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs 2.5 AMPERESwhich utilize Motorolas TMOS process. These miniature surface25 VOLTSmount MOSFETs feature ultra low

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power TransistorThe MRF247 is designed for 12.5 Volt VHF largesignal amplifier applicationsin industrial and commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF2P03HD/DAdvance InformationMTSF2P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to2.4 AMPERESachieve low

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P02E/DDesigner's Data SheetMMDF2P02EMedium Power Surface Mount ProductsTMOS Dual P-ChannelField Effect TransistorsDUAL TMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs 2.5 AMPERESwhich utilize Motorolas TMOS process. These miniature surface25 VOLTSmount MOSFETs feature ultra low

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DDesigner's Data SheetMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate2.0 AMPERES50 VOLTSEZFETs are an advanced series of power MOSFETs whichRDS(on) = 0.300 OHMutilize Motorolas High

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2C03HD/DDesigner's Data SheetMMDF2C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2201NT1/DMMBF2201NT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETrDS(on) = 1.0 OHMPart of the GreenLine Portfolio of devices with energycon-serving traits.These miniature surface mount MOSFE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P03HD/DDesigner's Data SheetMMDF2P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 2.0 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF224/DThe RF LineNPN SiliconMRF224RF Power Transistor. . . designed for 12.5 Volt VHF largesignal power amplifier applicationsrequired in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W40 W, 175 MHzPower Gain = 4.5 dB M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF LineNPN SiliconMRF247RF Power Transistor. . . designed for 12.5 Volt VHF largesignal amplifier applications in industrialand commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 75 Watts75 W, 175 MHzPower Gain = 7.0 dB MinCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2C01HD/DDesigner's Data SheetMMDF2C01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process.

Order this documentMOTOROLAby MJF3055/DSEMICONDUCTOR TECHNICAL DATANPNMJF3055ComplementaryPNPMJF2955Silicon Power Transistors. . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY CollectorEmitter Sustaining V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF224/DThe RF LineNPN SiliconMRF224RF Power Transistor. . . designed for 12.5 Volt VHF largesignal power amplifier applicationsrequired in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W40 W, 175 MHzPower Gain = 4.5 dB M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF255/DThe RF MOSFET LineMRF255RF PowerField-Effect TransistorNChannel EnhancementMode55 W, 12.5 Vdc, 54 MHzDesigned for broadband commercial and industrial applications at frequenciesNCHANNELto 54 MHz. The high gain, broadband performance and linear characterization ofBROADBANDthis device makes it i

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2C02HD/DDesigner's Data SheetMMDF2C02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF255PHT/DThe RF MOSFET LineMRF255RF PowerPHOTOMASTERField-Effect TransistorNChannel EnhancementModeCASE 21111, STYLE 2RFC1VGG VDD+ ++C5 C6 C15 C16 C17L5C7 C8DUTR2N2C14C4L3 L4N1 RFC1L1 L2RFOUTPUTINPUTC9 C10C11 C12C2 C3R1C1 470 pF, Chip Capacitor L1 8 Tu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF2P02HD/DAdvance InformationMTSF2P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER FETwhich utilize Motorolas High Cell Density HDTMOS process to2.4 AMPERESachieve lowest

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF275G/DThe RF MOSFET LinePower Field-Effect TransistorMRF275GNChannel EnhancementModeDesigned primarily for wideband largesignal output and driver stages from100 500 MHz.150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 VdcNCHANNEL MOSOutput Power 150 WattsBROADBANDPower Gain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06VL/DProduct PreviewMMDF2N06VLTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-2.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the p

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF275G/DThe RF MOSFET LinePower Field-Effect TransistorMRF275GNChannel EnhancementModeDesigned primarily for wideband largesignal output and driver stages from100 500 MHz.150 W, 28 V, 500 MHz Guaranteed Performance @ 500 MHz, 28 VdcNCHANNEL MOSOutput Power 150 WattsBROADBANDPower Gain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF240/DAM/FM TransistorBF240NPN SiliconCOLLECTOR13BASE1232EMITTERCASE 2904, STYLE 21MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF282/DThe RF SubMicron MOSFET LineMRF282SRF Power Field Effect TransistorsMRF282ZNChannel EnhancementMode Lateral MOSFETsDesigned for class A and class AB PCN and PCS base station applications atfrequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrieramplifier applications.10 W, 2000 MH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF282/DThe RF SubMicron MOSFET LineMRF282SRF Power Field Effect TransistorsMRF282ZNChannel EnhancementMode Lateral MOSFETsDesigned for class A and class AB PCN and PCS base station applications atfrequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrieramplifier applications.10 W, 2000 MH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF2P03HD/DDesigner's Data SheetMTSF2P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to2.7 AMPERESachiev

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2201NT1/DMMBF2201NT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETrDS(on) = 1.0 OHMPart of the GreenLine Portfolio of devices with energycon-serving traits.These miniature surface mount MOSFE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06V/DProduct PreviewMMDF2N06VTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-3.3 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the pre

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF259/DHigh Voltage TransistorsNPN Silicon PBF259PBF259SCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol PBF259,S UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Curre

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2628/DThe RF LineNPN SiliconMRF2628RF Power Transistor. . . designed for 12.5 volt VHF largesignal power amplifiers in commercial andindustrial FM equipment. Compact .280 Stud Package Specified 12.5 V, 175 MHz Performance15 W 136220 MHzOutput Power = 15 WattsRF POWERPower Gain = 12 dB MinTRA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF2628/DThe RF LineNPN SiliconMRF2628RF Power Transistor. . . designed for 12.5 volt VHF largesignal power amplifiers in commercial andindustrial FM equipment. Compact .280 Stud Package Specified 12.5 V, 175 MHz Performance15 W 136220 MHzOutput Power = 15 WattsRF POWERPower Gain = 12 dB MinTRA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2C01HD/DDesigner's Data SheetMMDF2C01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2P01HD/DDesigner's Data SheetMMDF2P01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 12 VOLTSThese m

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2202PT1/DMMBF2202PT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energycon- rDS(on) = 2.2 OHMserving traits.These miniature surface mount MOSFETs uti

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2C02E/DDesigner's Data SheetMMDF2C02EMedium Power Surface Mount ProductsComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 2.5 AMPERESwhich utilize Motorolas TMOS process. These miniature surface 25 VOLTSmount MOSFETs

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PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

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PD - 96383AAUTOMOTIVE GRADEAUIRF2805SAUIRF2805LHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.4.7m 175C Operating TemperatureG Fast Switching Fully Avalanche RatedS ID 135A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DescriptionSp

PD - 9.776AIRGBF20FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 900V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 4.3VG@VGE = 15V, IC = 5.3AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

PD - 94436BAUTOMOTIVE MOSFETIRF2804HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 2.3m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance

StrongIRFET IRF200B211 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/

PD - 9.1025IRGPF20FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 900V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 4.3VG@VGE = 15V, IC = 5.3AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Recti

PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie

PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot

PD - 96098AIRF2903ZSPbFIRF2903ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4ml Repetitive Avalanche Allowed up to TjmaxGl Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestDDprocessing techniques to achieve extremel

PD - 94428IRF2805AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical ApplicationsDl Climate Control, ABS, Electronic Braking,VDSS = 55V Windshield WipersFeaturesRDS(on) = 4.7mGl Advanced Process Technologyl Ultra Low On-ResistanceID = 75Al 175C Operating TemperatureSl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxDescriptionSpecifically designed

PD - 97031DIRF2907ZS-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.8mGDescriptionSID = 160AThis HEXFET Power MOSFET utilizes the latestS (Pin 2, 3, 5, 6, 7)processing techniques and advanced packaging G (

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

PD - 95493AIRF2805PbFHEXFET Power MOSFETTypical Applicationsl Industrial Motor DriveDVDSS = 55VFeaturesl Advanced Process TechnologyRDS(on) = 4.7mGl Ultra Low On-Resistancel 175C Operating TemperatureID = 75Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the latest processingtech

PD - 94659IRF2807ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 9.4m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

Provisional Data Sheet No. PD-9.1614IRLF230HEXFET TRANSISTORN-CHANNEL 200Volt, 0.40 Product Summary, HEXFETThe Logic Level L series of power MOSFETs are Part Number BVDSS RDS(on) IDdesigned to be operated with level logic gate-to-IRLF230 200V 0.40 5.2Asource voltage of 5V. In addition to the well es-tablished characteristics of HEXFETs, they

PD - 94970AIRF2807PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 75Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 13ml Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 82ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

PD - 97690AAUTOMOTIVE GRADEAUIRF2805Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel 175C Operating TemperatureDV(BR)DSS55Vl Fast SwitchingRDS(on) typ.3.9ml Fully Avalanche Ratedmax 4.7ml Repetitive Avalanche AllowedGup to TjmaxID (Silicon Limited)175Al Lead-Free, RoHS CompliantSID (Package Limited)75Al Autom

PD - 95944AIRF2805SPbFIRF2805LPbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 4.7ml 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 135ASl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the lates

RoHS IRF22N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET22A, 600VoltsDESCRIPTION The Nell IRF22N60 is a three-terminal silicon devicewith current conduction capability of 22A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 600V, and max. threshold voltage of 5 volts.G They are designed for use in applications such as

PD - 94170IRF2807SIRF2807LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 75V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13m Fast SwitchingG Fully Avalanche RatedID = 82A DescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low o

PD - 90427CIRFF220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790HEXFETTRANSISTORS JANTXV2N6790THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF220 200V 0.80 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

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PD - 94434AUTOMOTIVE MOSFETIRF2204Typical ApplicationsHEXFET Power MOSFET Electric Power SteeringD 14 Volts Automotive Electrical SystemsVDSS = 40VFeatures Advanced Process TechnologyRDS(on) = 3.6m Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 210AS Fast Switching Repetitive Avalanche Allowed u

AUTOMOTIVE GRADE PD -96290AAUIRF2804AUIRF2804SAUIRF2804LFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceV(BR)DSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.5m l Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 2.0m Gl Lead-Free, RoHS CompliantID (Silicon Limited) 270A l Automotive Qualified *SID

PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las

PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique

PD - 90370REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORS IRF240THRU-HOLE (TO-204AA/AE)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF240 200V 0.18 18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

PD - 95491AIRF2204SPbFTypical Applications IRF2204LPbF Industrial Motor DriveHEXFET Power MOSFETDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6mG 175C Operating Temperature Fast SwitchingID = 170A Repetitive Avalanche Allowed up to TjmaxS Lead-FreeDescriptionThis HEXFET Power MOSFET util

PD - 97057AIRF2804S-7PPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating Temperaturel Fast SwitchingVDSS = 40Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeGRDS(on) = 1.6mDescriptionSThis HEXFET Power MOSFET utilizes the latestID = 160AS (Pin 2, 3 ,5,6,7)processing techniques to achieve extr

PD - 97545AUTOMOTIVE GRADEAUIRF2907ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.4.5m Fast SwitchingG Repetitive Avalanche Allowed up to ID (Silicon Limited)170ATjmaxSID (Package Limited)75A Lead-Free, RoHS Compliant Automotive Qualified *

PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot

PD - 9.1665IRFBF20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBF20S)D Low-profile through-hole (IRFBF20L) VDSS = 900V Available in Tape & Reel (IRFBF20S) Dynamic dv/dt RatingRDS(on) = 8.0 150C Operating TemperatureG Fast SwitchingID = 1.7A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer

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PD -90431CIRFF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798HEXFETTRANSISTORS JANTXV2N6798THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF230 200V 0.40 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

PD - 91517IRF2807HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13mG Fast Switching Fully Avalanche RatedID = 82A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistanc

PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique

PD - 90424CIRFF210REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784HEXFETTRANSISTORS JANTXV2N6784THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF210 200V 1.5 2.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF242HF-VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationHF-VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gain Low noisehandbook, halfpage Easy power control1 4 Good thermal stability Withstands full load

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF244VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF power MOS transistor BLF244FEATURES PIN CONFIGURATION High power gain Low noise figurehandbook, halfpage Easy power control1 4 Good thermal stabilityd Withstands full

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF240NPN medium frequency transistor1999 Apr 21Product specificationSupersedes data of 1998 Dec 02Philips Semiconductors Product specificationNPN medium frequency transistor BF240FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D075BLF246BVHF push-pull power MOStransistorProduct specification 2003 Aug 04Supersedes data of 2001 Oct 10Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF246BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability2 4 6 8handbook, halfpage

DISCRETE SEMICONDUCTORSDATA SHEETBLF246VHF power MOS transistor1996 Oct 21Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF power MOS transistor BLF246FEATURES PINNING - SOT121 High power gainPIN SYMBOL DESCRIPTION Low noise figure1 d drain Easy power control2 s source Good thermal stability3 g ga

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D438BLF2043UHF power LDMOS transistorObjective specification 2000 Feb 23Supersedes data of 2000 Feb 17Philips Semiconductors Objective specificationUHF power LDMOS transistor BLF2043FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source o

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF2043FUHF power LDMOS transistorProduct specification 2002 Mar 05Supersedes data of 2000 Oct 19Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2043FFEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base el

DISCRETE SEMICONDUCTORSDATA SHEETBLF277VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF277FEATURES PIN CONFIGURATION High power gain Easy power control Gold metallization ensuresexcellent reliabilityandbook, halfpage Good thermal stability1 2 Withstands full load mi

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF245VHF power MOS transistorProduct specification 2003 Sep 02Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF power MOS transistor BLF245FEATURES PIN CONFIGURATION High power gainlfpage Low noise figure1 4 Easy power control Good thermal stabilityd Withstands full load mismatc

DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLF2043UHF power LDMOS transistorProduct specification 2003 Feb 10Supersedes data of 2002 Sep 10Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2043FEATURES PINNING - SOT538A Typical 2-tone performance at a supply voltage of 26 VPIN DESCRIPTIONand IDQ of 85 mA:1 drain Output power = 10 W (PEP)2

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF2045UHF power LDMOS transistorProduct specification 2000 Feb 17Supersedes data of 2000 Jan 04Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2045FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside eliminat

DISCRETE SEMICONDUCTORSDATA SHEETM3D096BLF245BVHF push-pull power MOStransistorProduct specification 2000 Oct 17Supersedes data of 1998 Jan 08Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF245BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 4fpage Gold metallization ensures d2

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF278VHF push-pull power MOStransistorProduct Specification 2003 Sep 19Supersedes data of 1996 Oct 21Philips Semiconductors Product SpecificationVHF push-pull power MOS transistor BLF278FEATURES PINNING - SOT262A1 High power gainPIN DESCRIPTION Easy power control1 drain 1 Good thermal stability2 drain 2 Gold

DISCRETE SEMICONDUCTORS DATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effect transistorsProduct specification 1996 Jul 30Supersedes data of April 1995NXP Semiconductors Product specificationBF245A; BF245B;N-channel silicon field-effect transistorsBF245CFEATURES PINNING Interchangeability of drain and source connectionsPIN SYMBOL DESCRIPTION Frequenc

DISCRETE SEMICONDUCTORS DATA SHEETM3D427BLF2048UHF push-pull power LDMOS transistorPreliminary specification 2000 May 24Philips Semiconductors Preliminary specificationUHF push-pull power LDMOS transistor BLF2048FEATURES PINNING - SOT539A High power gainPIN DESCRIPTION Easy power control1drain 1 Excellent ruggedness2drain 2 Source on underside elimi

DISCRETE SEMICONDUCTORSDATA SHEETBLF225VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF225FEATURES PIN CONFIGURATION Easy power control Good thermal stabilityk, halfpage Withstands full load mismatch.1 4DESCRIPTIONdSilicon N-channel enhancementgmode vertical D-MOS tra

DISCRETE SEMICONDUCTORSDATA SHEETBLF247BVHF push-pull power MOStransistorAugust 1994Product specificationPhilips SemiconductorsPhilips Semiconductors Product specificationVHF push-pull power MOS transistor BLF247BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Withstands full load mismatch.dgsAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PEMF2112 V PNP loadswitchProduct data sheet 2004 Jan 12NXP Semiconductors Product data sheet12 V PNP loadswitch PEMF21FEATURES QUICK REFERENCE DATA Low VCEsat transistor and resistor-equipped transistor in SYMBOL PARAMETER TYP. MAX. UNITone packageTR1; PNP; low VCEsat transistor Very small 1.6 1.2 mm ultra thin package

DISCRETE SEMICONDUCTORSDATA SHEETBLF278VHF push-pull power MOStransistor1996 Oct 21Product SpecificationSupersedes data of October 1992Philips Semiconductors Product SpecificationVHF push-pull power MOS transistor BLF278FEATURES PINNING - SOT262A1 High power gainPIN SYMBOL DESCRIPTION Easy power control1d1 drain 1 Good thermal stability2d2 drain 2

DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF202HF/VHF power MOS transistorProduct specification 1999 Oct 20Philips Semiconductors Product specificationHF/VHF power MOS transistor BLF202FEATURES PINNING - SOT409A High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5 source Withstands ful

BLF6G22-180RN;BLF6G22LS-180RNPower LDMOS transistorRev. 01 20 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF2047LUHF power LDMOS transistorProduct specification 1999 Dec 06Supersedes data of 1999 Apr 01Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2047LFEATURES PINNING High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside

DISCRETE SEMICONDUCTORSDATA SHEETBLF245VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF245FEATURES PIN CONFIGURATION High power gainlfpage Low noise figure1 4 Easy power control Good thermal stabilityd Withstands full load mismatch.gsMBB072DESCRIPTIONSilic

DISCRETE SEMICONDUCTORSDATA SHEETBLF242HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gainhalfpage Low noise1 4 Easy power control Good thermal stability Withstands full load mismatchd Gold metallization ensures

DISCRETE SEMICONDUCTORSDATA SHEETBLF276VHF power MOS transistorDecember 1997Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF276FEATURES PIN CONFIGURATION High power gain Easy power controlpage Good thermal stability1 2dDESCRIPTION3 4gSilicon N-channel enhancementsMBB072mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLF2045UHF power LDMOS transistorProduct specification 2004 Feb 11Supersedes data of 2003 Feb 27Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2045FEATURES PINNING Typical 2-tone performance at a supply voltage of 26 VPIN DESCRIPTIONand IDQ of 500 mA1 drain Output power = 30 W (PEP)2 gate

BLF6G20-180RN;BLF6G20LS-180RNPower LDMOS transistorRev. 01 17 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

DISCRETE SEMICONDUCTORSDATA SHEETBF246A; BF246B; BF246C;BF247A; BF247B; BF247CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction BF246A; BF246B; BF246C;field-effect transistors BF247A; BF247B; BF247CF

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF248VHF push-pull power MOStransistorProduct specification 2003 Sep 02Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF248FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2halfpage Gold metallization ensures

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCF29; BCF30PNP general purpose transistors1997 May 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BCF29; BCF30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (

DISCRETE SEMICONDUCTORSDATA SHEETBLF244VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF244FEATURES PIN CONFIGURATION High power gain Low noise figure Easy power controlk, halfpage Good thermal stability1 4 Withstands full load mismatch Gold metallization ensures

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF2047UHF power LDMOS transistorProduct specification 1999 Dec 02Supersedes data of 1999 Jul 01Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2047FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on underside el

DISCRETE SEMICONDUCTORSDATA SHEETBLF248VHF push-pull power MOStransistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF push-pull power MOS transistor BLF248FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Gold metallization ensuresd2halfpageexcellent reliability.g2sg1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D379BLF2047L/90UHF power LDMOS transistorProduct specification 2000 Mar 06Supersedes data of 2000 Feb 17Philips Semiconductors Product specificationUHF power LDMOS transistor BLF2047L/90FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on unde

DISCRETE SEMICONDUCTORS DATA SHEETM3D381BLF2043FUHF power LDMOS transistorPreliminary specification 2000 Oct 19Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF2043FFEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on mounting base eliminates DC isolators,

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D379BLF2022-70UHF power LDMOS transistorPreliminary specification 2000 Sep 21Philips Semiconductors Preliminary specificationUHF power LDMOS transistor BLF2022-70FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Designed for broadband operation (2.0 t

DISCRETE SEMICONDUCTORSDATA SHEETM3D060BLF246VHF power MOS transistorProduct specification 2003 Aug 05Supersedes data of 1996 Oct 21Philips Semiconductors Product specificationVHF power MOS transistor BLF246FEATURES PINNING - SOT121B High power gainPIN DESCRIPTION Low noise figure1 drain Easy power control2 source Good thermal stability3 gate

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

2STF2360Low voltage fast-switching PNP power transistorsDatasheet - production dataApplications4 Emergency lighting32 LED1 Voltage regulation Relay drive SOT-89DescriptionFigure 1. Internal schematic diagramThe device is PNP transistor manufactured using new PB-HDC (power bipolar high density current) technology. The resulting transistor sho

STD25N10F7, STF25N10F7, STP25N10F7N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDSS ID PTOTmax.(1)DPAKSTD25N10F7 100 V 0.035 25 A 40 WSTF25N10F7 100 V 0.035 19 A 25 WTABSTP25N10F7 100 V 0.035 25 A 50 W1. @ VGS = 10 V 33

STGYA75H120DF2DatasheetTrench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads packageFeatures Maximum junction temperature: TJ = 175 C 5 s of short-circuit withstand time32 VCE(sat) = 2.1 V (typ.) @ IC = 75 ATAB1 Tight parameter distributionTAB Positive VCE(sat) temperature coefficient Low thermal resistance12

STGW25H120F2, STGWA25H120F2Trench gate field-stop IGBT, H series 1200 V, 25 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 32 2 TJ=150 C1 1 Tight parameters distribution

STF26N65DM2DatasheetN-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220FP packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF26N65DM2 650 V 0.190 20 A 30 W Fast-recovery body diode Extremely low gate charge and input capacitance321 Low on-resistance 100% avalanche testedTO-220FP Extremely high dv/dt ruggednessD(2)

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) @ I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resi

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

STB19NF20, STF19NF20, STP19NF20N-channel 200 V, 0.15 typ., 15 A MESH OVERLAY Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet production dataFeaturesTABType VDSS RDS(on) ID pwSTB19NF20 200V

STE140NF20DN-channel 200 V, 0.010 , 140 A, ISOTOPSTripFET II with fast recovery diode Power MOSFETFeatures Type VDSS RDS(on) max IDSTE140NF20D 200 V

STD2N62K3, STF2N62K3, STU2N62K3DatasheetN-channel 620 V, 2.9 typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2N62K3 DPAKSTF2N62K3 620 V 3.6 2.2 A TO-220FPSTU2N62K3 IPAKD(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitanceG(1) Improved

STGWA50M65DF2 Trench gate field-stop IGBT, M series 650 V, 50 A low-loss in a TO-247 long leads package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.65 V (typ.) @ I = 50 A CE(sat) C Tight parameters distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft

STB18NF25STD18NF25N-channel 250 V, 0.14 , 17 A DPAK, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PTOTmaxSTB18NF25 250 V

STP20NF06STF20NF06N-channel 60V - 0.06 - 20A - TO-220/TO-220FPSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTP20NF06 60V

STD2LN60K3, STF2LN60K3, STU2LN60K3N-channel 600 V, 4 typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max ID PTOT3132STD2LN60K3 45 W DPAK1STF2LN60K3 600 V

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5N-channel 800 V, 3.5 typ., 2 A Zener-protected SuperMESH 5Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on)max ID PTOT31STD2N80K5 45 WDPAK3 STF2N80K5 20 W2800 V 4.5 2 A1STP2N80K5TAB45 WTO-220FPSTU2N80K5TAB TO-220 worldwide best RDS

STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited

STGB20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeaturesTAB High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution23 Safer paralleling1 Low thermal resistanceDPAK Soft and very fast recovery antiparallel diodeC(2, TAB)Applications Motor control UPSG(1)

STGF20NB60SN-CHANNEL 13A - 600V TO-220FPPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGF20NB60S 600 V

STI17NF25 - STD17NF25STF17NF25 - STP17NF25N-channel 250V - 0.14 - 17A - TO-220/FP - DPAK - I2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTD17NF25 250V

STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2 - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTF2NK60Z 600 V

STF2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTF2222A 20F SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISSTF2907AAPPLICATIONS SOT-89 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAG

STW90NF20N-channel 200 V, 0.019 , 83 A, TO-247low gate charge STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTW90NF20 200 V

STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V

STGW25H120F2, STGWA25H120F2Trench gate field-stop IGBT, H series 1200 V, 25 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 32 2 TJ=150 C1 1 Tight parameters distribution

STx23NM60NDN-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET(with fast diode) DPAK, IPAK, TO-220, TO-220FP, TO-247FeaturesVDSS RDS(on) Type ID3max.3(@Tjmax)1 21STx23NM60ND 650 V

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5N-channel 800 V, 0.19 typ., 19.5 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order code ID PTOTTJmax max3312STB25N80K5 250 W1D2PAKTO-220FPSTF25N80K5 40 WTAB800 V

STS5PF20VP-CHANNEL 20V - 0.065 - 5ASO-82.5V-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) ID

STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very

STP20NM65NSTF20NM65NN-channel 650 V, 0.250 , 15 A TO-220, TO-220FPsecond generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Order codes ID@Tjmax max.STP20NM65N710 V 0.270 15 ASTF20NM65N33 100 % avalanche tested2211 Low input capacitance and gate chargeTO-220TO-220FP Low gate input resistanceApplication Switching applicationsF

STD16NF25STF16NF25 - STP16NF25N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PwMax3STD16NF25 250V

STB28N65M2, STF28N65M2,STP28N65M2, STW28N65M2N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETsin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTB28N65M233STF28N65M212650 V 0.18 20 A1STP28N65M2D2PAKTO-220FPSTW28N65M2TAB Extremely low gate charge Excellent output

STF20N65M5, STFI20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxSTF20N65M5710 V 0.19 18 ASTFI20N65M53 Worldwide best RDS(on) * area 12 231 Higher VDSS rating and high dv/dt capabilityTO-220FPI2PAKFP Excellent switching

STGWA20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diodeC (2)Applications Motor control UPS PFCG (1) General-purp

STF25N60M2-EP N-channel 600 V, 0.175 typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I DTJmax max. STF25N60M2-EP 650 V 0.188 18 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 32 100% avalanche tested 1

2STF2280Low voltage high performance PNP power transistorPreliminary dataFeatures Low collector-emitter saturation voltage High current gain characteristic4 Fast switching speed321Applications DC-DC converter, voltage regulationSOT-89 General purpose switching equipmentDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor

STB28NM50N, STF28NM50NSTP28NM50N, STW28NM50NN-channel 500 V, 0.135 , 21 A D2PAK, TO-220, TO-220FP, TO-247MDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB28NM50NTO-220TO-220FPSTF28NM50N550 V

STF26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max I DS DS(on) DSTF26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications TO-220FP Switching applications Description Figure 1: Int

STGP20M65DF2DatasheetTrench gate field-stop, 650 V, 20 A, M series low-loss IGBTFeatures High short-circuit withstand timeTAB VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameters distribution Safer paralleling321 Low thermal resistanceTO-220 Soft and very fast recovery antiparallel diodeC(2, TAB) Applications Motor control UPSG(1)

STB26NM60N, STF26NM60NSTP26NM60N, STW26NM60NN-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) Type VDSS IDmax32312STB26NM60N 600 V

STGF15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 15 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast reco

STF2907ASMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingSTF2907A 03F SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE ISSTF2222AAPPLICATIONS SOT-89 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAG

STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V

STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

STD8NF25N-channel 250 V, 318 m, 8 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STD8NF25 250 V

STGF20M65DF2DatasheetTrench gate field-stop, M series, 650 V, 20 A, low-loss IGBTFeatures High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A Tight parameter distribution Safer paralleling32 Low thermal resistance1 Soft and very fast recovery antiparallel diodeTO-220FPC (2) Applications Motor control UPS PFCG (1)

STS6NF20VN-channel 20 V, 0.030 , 6 A SO-82.7 V drive STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID

STB50NF25STP50NF25N-channel 250V - 0.055 - 45A - D2PAK - TO-220low gate charge STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID PWMaxSTP50NF25 250 V

STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) DSTB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Ze

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF24N60M2321 1 STFI24N60M2 650 V 0.19 18 A23TO-220FPSTFW24N60M2I2PAKFP(TO-281) Extremely low gate charge Lower RDS(on) x area

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

STB25NM60Nx - STF25NM60NSTP25NM60N - STW25NM60NN-channel 600 V, 0.130 , 21 A, MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB25NM60N 650 V

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery

STF28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STF28N60DM2 650 V 0.16 21 A 30 W Fast-recovery body diode Extremely low gate charge and input 32capacitance 1 Low on-resistance 100% avalanche tested TO-220F

STN1NF20N-channel 200 V, 1.1 , 1 A SOT-223STripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTN1NF20 200 V

STT4PF20VP-CHANNEL 20V - 0.090 - 3A SOT23-6L2.7V-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) ID

STx25NM50NN-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max323121STB25NM50N 550 V

STF24NM60NSTP24NM60N, STW24NM60NN-channel 600 V, 0.168 , 17 A MDmesh II Power MOSFETTO-220FP, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.STF24NM60N 650 V

STC5NF20VN-channel 20V - 0.030 - 5A - TSSOP82.7V-drive STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID

STB28NM60ND, STF28NM60ND,STP28NM60ND, STW28NM60NDN-channel 600 V, 0.13 typ., 23 A FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABVDS @2Order codes RDS(on) max ID3TJ max.13212STB28NM60NDD PAKTO-220FPSTF28NM60NDTAB650 V 0.150 23 ASTP28NM60NDSTW28NM60ND333221 211

STP20N20STF20N20 - STD20N20N-CHANNEL 200V - 0.10 - 18A TO-220/TO-220FP/DPAKLOW GATE CHARGE STripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) Id PTOTSTD20N20 200 V

STGP10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) CTAB Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance 3 Soft and very fast

STB23NM60N-STF23NM60NSTI23NM60N-STP23NM60N-STW23NM60NN-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FPTO-247, second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB23NM60N 19 ADPAKIPAKSTI23NM60N 19 A3STF23NM60N 650 V 0.180 19 A (1)21STP23NM60N 19 ATO-247STW23NM60N 19 A3 32 21 11. Limited

STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5N-channel 950 V, 4.2 typ., 2 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT31STD2N95K5 45 WDPAK3STF2N95K5 20 W21 950 V 5 2 ATABSTP2N95K5TO-220FP45 WSTU2N95K5TAB TO-220 worldwide best RD

STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2

STF24NF12N-channel 120V - 0.070 - 24A TO-220FPLow gate charge STripFET II MOSFETGeneral featuresType VDSS RDS(on) IDSTF24NF12 120V

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60NN-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packagesDatasheet - production dataTAB Features Order codes VDS @Tjmax RDS(on) max. IDSTF24NM60N3 322 11STI24NM60NI2PAKTO-220FP650 V 0.19 17 ASTP24NM60NTABSTW24NM60N 100% avalanche tested332 L

STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V

STB20NK50Z, STF20NK50ZSTP20NK50Z, STW20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected TO-220, TO-247, TO-220FP, D2PAKFeatures RDS(on) Type VDSS ID PWmax3322STB20NK50Z 500 V

STT3PF20VP-CHANNEL 20V - 0.14 - 2.2A SOT23-6L2.7-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTT3PF20V TYPICAL RDS(on) = 0.14 (@4.5V) TYPICAL RDS(on) = 0.20 (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLYSOT23-6LDESCRIPTIONThis Power MOSFET is the latest development ofSTMicroelectronis unique "Single

2STF23402STN2340Low voltage fast-switching PNP power transistorsFeatures Very low collector-emitter saturation voltage High current gain characteristic44 Fast switching speed3322Applications 11 LEDSOT-89 SOT-223 Motherboard & hard disk drive Mobile equipment DC-DC converterFigure 1. Internal schematic diagramDescriptionThe devices

STGYA120M65DF2AGDatasheetAutomotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads packageFeatures AEC-Q101 qualified 6 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STD2HNK60Z-APN-channel 600 V, 4.4 , 2 A Zener-protected SuperMESH Power MOSFET in TO-92-TO-220FP-DPAK-IPAK packagesDatasheet production dataFeatures TABRDS(on) 3Order codes VDSS max. ID PTOT3121DPAKSTD2HNK60Z 600 V

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat)3 Low thermal resistance 1 Soft and very

STN4NF20LN-channel 200 V, 1.1 , 1 A SOT-223low gate charge STripFET II Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.2STN4NF20L 200 V

STB20NF06L - STF20NF06LSTP20NF06LN-channel 60V - 0.06 - 20A - D2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB20NF06L 60V

STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V

STB19NF20, STD19NF20STF19NF20, STP19NF20DatasheetN-channel 200 V, 0.11 , 15 A, MESH OVERLAY Power MOSFETs in D2PAK, DPAK, TO220FP and TO-220 packagesFeaturesTABTAB32 VDS RDS(on) max. IDType Package311DPAK2D PAKSTB19NF20D2PAKTABSTD19NF20 DPAK200 V 0.16 15 ASTF19NF20 TO-220FP3231STP19NF20 TO-22021TO-220TO-220FP Extremel

2STF2220High gain Low Voltage PNP power transistorFeatures Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 1.5 A continuous collector currentApplications Power management in portable equipmentSOT-89 Switching regulator in battery charger applicationsDescriptionThe device in a PNP transistor manufacturedFigure 1. Internal sche

STP30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W Gate charge minimized 3 32 21 1 100% avalanche testedTO-220TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver

STP20NF06STF20NF06N-channel 60V - 0.06 - 20A - TO-220/TO-220FPSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTP20NF06 60V

STGD4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.6 V (typ.) @ I = 4 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Internal

STP/F21NM60ND-STW21NM60NDSTB21NM60ND-STI21NM60NDN-channel 600 V, 0.17 , 17 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max 33 13221STB21NM60ND 650 V

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) @ I = 15 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat)3 Low thermal resistance 1 Soft and ver

STB30NF20LN-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) ID PTOTSTB30NF20L 200 V 0.075 30 A 150 WTAB Gate charge minimized 100% avalanche tested3 Excellent figure of merit (RDS* Qg)1 Very good manufacturing repeatabilityDPAK Very low intrinsic capacitanceApp

STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V

STF20N90K5DatasheetN-channel 900 V, 0.21 typ., 20 A MDmesh K5 Power MOSFET in a TO220FP packageFeaturesVDS RDS(on ) max. IDOrder codeSTF20N90K5 900 V 0.25 20 A Industrys lowest RDS(on) x area3 Industrys best FoM (figure of merit)21 Ultra-low gate charge 100% avalanche testedTO-220FP Zener-protectedD(2)Applications Switchi

STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60NDN-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max331 21STB21NM60ND 650 V 0.22 17 AD2PAK TO-220FPSTF21NM60ND 650 V 0.22 17 ASTP21NM60ND 650 V 0.22 17 ATABSTW21NM60N

STB19NF20 - STF19NF20STP19NF20N-channel 200V - 0.15 - 15A - TO-220 - D2PAK - TO-220FPMESH OVERLAY Power MOSFETGeneral featuresType VDSS RDS(on) ID pwSTB19NF20 200V

BF257BF258-BF259HIGH VOLTAGE VIDEO AMPLIFIERSDESCRIPTIONThe BF257, BF258 and BF259 are silicon planarepitaxial NPN transistors in Jedec TO-39 metalcase.They are particularly designed for videooutputstages in CTV and MTV sets, class A audio outputstages and drivers for horizontal deflection circuits.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSValueSymbol Para

STGF30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor

STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in DPAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max ID PTOT32311STB2N62K3TAB45 WIPAKDPAKSTD2N62K33TABSTF2N62K3 620 V

STD17NF25, STF17NF25, STP17NF25DatasheetN-channel 250 V, 0.140 typ., 17 A STripFET II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTAB321DPAKVDS RDS(on)max. ID PTOTOrder codeTABSTD17NF25 90 WSTF17NF25 250 V 0.165 17 A 25 W32 3121TO-220FP TO-220 STP17NF25 90 WD(2, TAB) Exceptional dv/dt capability 100% avalanche tested

STF20NM60D - STP20NM60FDSTW20NM60FDN-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID PwSTF20NM60D 600V

STD2HNK60Z, STD2HNK60Z-1 STF2HNK60Z, STQ2HNK60ZR-APDatasheetN-channel 600 V, 3.5 typ., 2 A SuperMESH Power MOSFETs in DPAK, IPAK, TO-220FP and TO-92 packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD2HNK60Z DPAKSTD2HNK60Z-1 2 A IPAK600 V 4.8 STF2HNK60Z TO-220FPSTQ2HNK60ZR-AP 0.5 A TO-92 Extremely high dv/dt capability 100% avalanche testedD(2, TA

STx25NM50NN-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max323121STB25NM50N 550 V

2STD23602STF2360 - 2STN2360Low voltage fast-switching PNP power transistorsFeatures4 Very low collector-emitter saturation voltage4 High current gain characteristic 3322 Fast-switching speed 11 SOT-223 SOT-89ApplicationsTAB Emergency lighting LED3 Voltage regulation1 Relay drive TO-252 (DPAK)DescriptionFigure 1. Internal schem

STB22NM60N, STF22NM60N, STI22NM60NSTP22NM60N, STW22NM60NN-channel 600 V, 0.2 , 16 A MDmesh II Power MOSFETin D2PAK, TO-220FP, I2PAK, TO-220 and TO-247FeaturesVDSS RDS(on) Order codes ID(@Tjmax) max.31332STB22NM60N 650 V

STF20NK50Z, STP20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected in TO-220FP and TO-220 packagesDatasheet production dataFeatures RDS(on) Order codes VDSS ID PTOTTABmaxSTF20NK50Z 500 V

STx25NM60NDN-channel 600 V, 0.13 , 21 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33 13221STB25NM60ND 21 A 1D2PAKTO-220STI25NM60ND 21 ATO-220FPSTF25NM60ND 650 V 0.16 21 A(1)STP25NM60ND 21 ASTW25NM60ND 21 A1. Limited only by maximum temperature allowed323121 The worldwide

STGB20H60DF, STGF20H60DF, STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution3 Safe paralleling32211 Low thermal resistanceTO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diodeTABApplications31 Motor contr

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

STS4DPF20LDUAL P-CHANNEL 20V - 0.07 - 4A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS4DPF20L 20 V

STD2N62K3, STF2N62K3STP2N62K3, STU2N62K3N-channel 620 V, 3 , 2.2 A, DPAK, IPAK, TO-220, TO-220FPSuperMESH3 Power MOSFETFeaturesRDS(on) 3Type VDSS ID Pwmax1 32DPAK 1STD2N62K3 45 WIPAKSTF2N62K3 20 W620 V

STD20NF20STF20NF20, STP20NF20N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FPlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PWSTD20NF20 200 V

STW24NM65N-STI24NM65N-STF24NM65NSTB24NM65N - STP24NM65NN-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D2PAKI2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) max ID(@TJmax)323121STB24NM65N 710 V

STGW25H120DF2, STGWA25H120DF2Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) CTAB Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode 321Appl

STB22NM60N, STF22NM60N, STP22NM60NDatasheetN-channel 600 V, 0.20 typ., 16 A MDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packagesFeaturesTABVDS @31 RDS(on)max. IDOrder code2D PAKTjmax.321TO-220FPTAB STB22NM60NSTF22NM60N 650 V 0.22 16 A32 STP22NM60N1TO-220 100% avalanche testedD(2, TAB) Low input capacitance and gate charg

STB23NM50N, STF23NM50NSTP23NM50N, STW23NM50NN-channel 500 V, 0.162 , 17 A TO-220, TO-220FP, TO-247, D2PAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STB23NM50N1TO-220FP TO-220STF23NM50N550 V

STT5NF20VN-channel 20 V, 0.030 , 5 A SOT23-6L2.5 V drive STripFET II Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) ID

STF28N60M2, STFI28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTF28N60M2650 V 0.150 22 ASTFI28N60M23 Extremely low gate charge21 Excellent output capacitance (Coss) profile TO-220FP 123 100% avalanche tested2I PAKFP

STGW25H120DF2, STGWA25H120DF2Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247

STS2DPF20VDUAL P-CHANNEL 20V - 0.14 - 2A SO-82.7V-DRIVE STripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) ID

STF24N60DM2N-channel 600 V, 0.175 typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF24N60DM2 650 V 0.20 18 A Fast-recovery body diode Extremely low gate charge and input 321 capacitanceTO-220FP Low on-resistance 100% avalanche tested Extremely high dv/dt rugg

STB75NF20STP75NF20 - STW75NF20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75NF20 200V

STS3DPF20VDUAL P-CHANNEL 20V - 0.090 - 3A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS3DPF20L 20 V

STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2

STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 6 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control Figure 1: Interna

STB19NF20, STD19NF20, STF19NF20, STP19NF20N-channel 200 V, 0.11 typ., 15 A MESH OVERLAY Power MOSFET in DPAK, DPAK, TO-220FP and TO-220 packagesDatasheet production dataFeaturesTABTABRDS(on) Type VDS ID PTOTmax.33STB19NF20 200 V 0.16 15 A 90 W11DPAK DPAKSTD19NF20 200 V 0.16 15 A 90 WTABSTF19NF20 200 V 0.16 15 A 25 WSTP19NF20 200

STGW40H120F2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A3 5 s minimum short circuit withstand time at 2TJ=150 C1 Tight parameters distribution Safe paralleling

STY130NF20DN-channel 200 V, 0.01 , 130 A, Max247low gate charge STripFET II Power MOSFETFeatures RDS(on) Type VDSS ID PWmaxSTY130NF20D 200 V

STx25NM50NN-channel 500 V, 0.11 , 22 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max323121STB25NM50N 550 V

STD2HNK60Z - STD2HNK60Z-1STF2HNK60Z - STQ2HNK60ZR-APN-channel 600V - 4.4 - 2A - TO-92/TO-220FP/DPAK/IPAKZener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOT3321STD2HNK60Z 600V

STU7NF25N-channel 250 V, 0.29 typ., 8 A STripFET II Power MOSFET in IPAK packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max. IDTABSTU7NF25 250 V 0.42 8 A 100% avalanche tested3 175 C junction temperature21ApplicationsIPAK Switching applicationsDescriptionThis Power MOSFET has been developed using Figure 1. Internal sche

STS5DNF20VN-channel 20 V, 0.030 , 5 A SO-82.7 V, drive STripFET II Power MOSFETFeaturesOrder code VDSS RDS(on) max. ID

STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF23N80K5 800 V 0.28 16 A 35 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F

STF26NM60N-HN-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFETin TO-220FPFeaturesRDS(on) Type VDSS IDmaxSTF26NM60N-H 600 V

STD25NF20Automotive-grade N-channel 200 V, 0.10 typ., 18 A STripFET Power MOSFET in a DPAK packageDatasheet - production dataFeaturesRDS(on) Order code VDS max ID PTOTSTD25NF20 200 V 0.125 18 A 110 WTAB Designed for automotive applications and 31 AEC-Q101 qualifiedDPAK Extremely low gate charge Exceptional dv/dt capability Low gate input resis

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

STB25NM60Nx - STF25NM60NSTP25NM60N - STW25NM60NN-channel 600 V, 0.130 , 21 A, MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, D2PAK, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB25NM60N 650 V

STB21N65M5, STF21N65M5STI21N65M5, STP21N65M5, STW21N65M5N-channel 650 V, 0.175 , 17 A MDmesh V Power MOSFETD2PAK, TO-220FP, TO-220, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type ID PWTJmax max3231STB21N65M5 17 A 125 W 21TO-220STF21N65M5 17 A(1) 30 WIPAKSTI21N65M5 710 V

2STF25502STN2550Low voltage high performance PNP power transistorsPreliminary DataFeatures Very low collector-emitter saturation voltage High current gain characteristic4 Fast switching speed4 Surface mounting devices in medium power 332SOT-89 and SOT-223 packages211ApplicationsSOT-223SOT-89 Emergency lighting LED Motherboard an

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery

STT5PF20VP-CHANNEL 20V - 0.065 - 5ASOT23-6L2.5V-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) ID

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60NDN-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ Tjmax RDS(on) max ID31STB26NM60ND23D PAK21 STF26NM60ND650 V 0.175 21 ATO-220FPSTP26NM60NDTABSTW26NM60ND 100% avalanche tested3 32

STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

STS4PF20VP-CHANNEL 20V - 0.090 - 4A SO-82.7V-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) ID

STB21N90K5, STF21N90K5, STP21N90K5,STW21N90K5N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW331STB21N90K5 250 W 21D2PAKTO-220FPSTF21N90K5 40 W900 V

STGW15H120DF2, STGWA15H120DF2DatasheetTrench gate field-stop IGBT, H series 1200 V, 15 A high speedFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3 VCE(sat) = 2.1 V @ IC = 15 A23121 5 s minimum short circuit withstand time at TJ = 150 CTO-247 TO-247 long leads Safe paralleling Low the

Ordering number : ENN7054BSGF29N-Channel GaAs MESFETSGF29For C to Ku-band Local Oscillator and AmplifierFeaturesPackage Dimensions Lowest phase noise.unit : mm The chip surface is covered with the highly reliable2134Aprotection film.[SGF29] Super miniaturized plastic-mold package (CP4).1.9 Automatic surface mounting is available.0.95 0.950.40.16

Ordering number : EN5820N-Channel GaAs MESFETSGF25For C- to X-band local oscillator and amplifierFeaturesPackage Dimensions Super miniaturized plastic-mold package(CP4).unit: mm High reliability achieved by original manufacturing2134Atechnology(adopting a protection coat). Available for surface mounting and automatic inserting. [SGF25]1 : Gate2 : Source3 : D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SMD Type ICSMD Type ICPower MOSFET 2 Am, 30 VKMDF2C03HDFeaturesUltra Low RDS(on) Provides Higher Efficiency and ExtendsBattery LifeLogic Level Gate Drive ? Can Be Driven by Logic ICsDiode Is Characterized for Use In Bridge CircuitsDiode Exhibits High Speed, With Soft RecoveryIDSS Specified at Elevated TemperatureAvalanche Energy SpecifiedAbsolute Maximum Ratings Ta = 25

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

BF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDerate

April 2013FJPF2145ESBC Rated NPN Power TransistorESBC Features (FDC655 MOSFET) DescriptionVCS(ON) IC Equiv. RCS(ON)(1) The FJPF2145 is a low-cost, high-performance powerswitch designed to provide the best performance when0.21 V 2 A 0.105 used in an ESBC configuration in applications such as:power supplies, motor drivers, smart grid, or ignition Low Equivalent On Res

FFPF20U60SFeatures High voltage and high reliability High speed switching Low forward voltageApplications General purposeTO-220F Switching mode power supply1 2 Free-wheeling diode for motor application Power switching circuits 1. Cathode 2. Anode ULTRA FAST RECOVERY POWER RECTIFIERAbsolute Maximum Ratings TC=25C unless otherwise noted

September 2007BF246AN-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 39 VVGS Gate-Source Voltage -30 VIGF Forward Ga

December 2000TMQFETQFETQFETQFETFQPF2P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.34A, -400V, RDS(on) = 6.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology is

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 12A, 300V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been es

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been es

September 2007FDPF2710T250V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 25A, 250V, RDS(on) = 36.3m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p

August 2014FCP20N60 / FCPF20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC )r

December 2008 TMSuperFETFCP20N60 / FCPF20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge perfo

BF240NPN RF TransistorTO-9211. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4.0 VIC Collector Current - Continuous 50 mATJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 C* These ratings are

FJYF2906C1PNP Multi-Chip General Purpose AmplifierE1 Collector-Emitter Voltage: VCEO = 40VC2 Amplifier and Switching Application E2 is on pin 1B1B2E2 (Pin1)SOT-563FMark: S1Absolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5 V

October 2007UniFETTMFDP20N50F / FDPF20N50FTtmN-Channel MOSFET, FRFET 500V, 20A, 0.26Features RDS(on) = 0.22 ( Typ.)@ VGS = 10V, ID = 10ADescription Low gate charge ( Typ. 50nC)These N-Channel enhancement mode power field effect transis- Low Crss ( Typ. 27pF)tors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Fast reve

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 22A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

December 2007UniFETTMFDP24N40 / FDPF24N40N-Channel MOSFET 400V, 24A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 46nC)stripe, DMOS technology. Low Crss ( Typ. 25pF)This advanced technology has b

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has be

April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo

April 2000TMQFETQFETQFETQFETFQPF2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been

TMQFETFQPF2N70700V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 700V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored to Fa

September 2014FCPF260N65FL1N-Channel SuperFET II FRFET MOSFET650 V, 15 A, 260 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 220 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 46

May 2015FCPF290N80N-Channel SuperFET II MOSFET800 V, 17 A, 290 mFeatures Description Typ. RDS(on) = 0.245 SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 58 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 5.6 uJ @

BF246B N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51. See J111 for characteristics.TO-92D G S1. Drain 2. Gate 3. SourceAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltag

May 2001TMQFETFQPF20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored t

July 2009SupreMOS TMFCP22N60N / FCPF22N60NT tmN-Channel MOSFET600V, 22A, 0.165Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oCprocess that differentiates it from preceding multi-epi based tech-nologies.

September 2000TMQFETFQPF2N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tail

December 2014FCPF2250N80ZN-Channel SuperFET II MOSFET800 V, 2.6 A, 2.25 Features Description RDS(on) = 1.8 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 11 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.

May 2001TMQFETFQPF20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.7A, 60V, RDS(on) = 0.055 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially t

April 2007TMUniFETFDP20N50 / FDPF20N50500V N-Channel MOSFETFeatures Description 20A, 500V, RDS(on) = 0.23 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 45.6 nC)stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has been especially

May 2015FCPF220N80N-Channel SuperFET II MOSFET800 V, 23 A, 220 mFeatures Description Typ. RDS(on) = 188 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 78 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 7.5 uJ @ 4

November 2013FDP20N50 / FDPF20N50 / FDPF20N50TN-Channel UniFETTM MOSFET500 V, 20 A, 230 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 200 m (Typ.) @ VGS = 10 V, ID = 10 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 45.6 nC)This MOSFET is tailored to reduce on-state resistance, and to

September 2000TMQFETQFETQFETQFETFQPF2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 400V, RDS(on) = 5.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has bee

May 2001TMQFETFQPF27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored

BF256A/BF256B/BF256CN-Channel RF Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDer

March 2014FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 15 A, 260 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 220 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge

TMQFETFQPF22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -13.2A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 160 pF)This advanced technology has been especially tailored to

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been es

September 2007BF247AN-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Ga

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BF244ABF244BBF244CS TO-92GDN-Channel RF AmplifierThis device is designed for RF amplifier and mixer applicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage - 30 VID Drain Curr

TMQFETFQAF22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.6A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 40 nC)planar stripe, DMOS technology. Low Crss ( typically 160 pF)This advanced technology has been especially tailored

April 2000TMQFETQFETQFETQFETFQPF2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.8A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has be

October 2001 IGBTSGF23N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UF High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12AUF series is designed for the applications such as motor High Input Impedancecontrol and general inverters where High

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16.7A, 150V, RDS(on) = 0.09 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been

February 2008UniFETTMFDP26N40 / FDPF26N40tmN-Channel MOSFET 400V, 26A, 0.16Features Description RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 48nC)stripe, DMOS technology. Low Crss ( Typ. 30pF)This advanced technology h

July 2013FQPF2N80YDTUN-Channel QFET MOSFET 8 0 V, 1.5 A, FeaturesDescriptionThis N-Channel enhancement mode power MOSFET is 1.5 A, 8 0 V, RDS(on)= (Max.)@VGS=10 V, ID=0.75 Aproduced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 12 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 5.5 pF)MOSFET technolog

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.3A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technology has bee

BLF2425M7L250P; BLF2425M7LS250PPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor

PMF250XN30 V, 0.9 A N-channel Trench MOSFETRev. 1 7 December 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas

PMF250XNE30V N-channel Trench MOSFET28 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

PROFET BTS 410 F2Smart Highside Power SwitchFeatures Product Summary Overload protectionOvervoltage protection Vbb(AZ) 65 V Current limitationV 4.7 ... 42 VOperating voltage bb(on) Short circuit protectionOn-state resistance R 220 Thermal shutdownON m Overvoltage protection (including load dump) Load current (ISO) I 1.8 AL(ISO) Fast demagnetiza

PROFET BTS 432 F2Smart Highside Power SwitchFeatures Product Summary Load dump and reverse battery protection1)V 80 VLoad dump Clamp of negative voltage at outputVbb-VOUT Avalanche Clamp 58 V Short-circuit protectionV 4.5 ... 42 Vbb (operation) Current limitationV -32 Vbb (reverse) Thermal shutdownR 38ON m Diagnostic feedbackI 21 AL

UMF28NDatasheetPower manegement (dual transistors)lOutlinelParameter Value SOT-363VCEO-50V SC-88IC-150mA Parameter ValueVCC50VIC(Max.) UMT6100mAlFeatures lInner circuitl l1)Power switching circuit (2SA1576A/DTC124XUA)in a single package.2)Mounting cost and area can be cut in half.lApplication

EMF24 / UMF24N Transistors Power management (dual transistors) EMF24 / UMF24N 2SC4617 and DTC114E are housed independently in a EMT6 or UMT6 package. External dimensions (Units : mm) Application EMF24Power management circuit ( ) ( )4 3( ) ( )5 2( ) ( )6 11.21.6 Features 1) Power switching circuit in a single package. ROHM : EMT6Each lead has same dimen

Data Sheet1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2 StructureDimensions (Unit : mm)Silicon P-channel MOSFET/TSMT8(8) (7) (6) (5)PNP TRANSISTORFeatures1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(1.5V drive).Abbreviated symbol : F02 ApplicationSwitching Packaging specificationsInner circuit(8) (7)

IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

SiHF22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced Switching and Conduction LossesQg max. (nC) 86 Ultra Low Gate Charge (Qg)Qgs (nC) 14 Avalanche Energy Rated (UIS)Qgd (nC) 26

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs

SiHF23N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.158 Reduced switching and conduction lossesQg max. (nC) 95 Ultra low gate charge (Qg)Qgs (nC) 16Qgd (nC) 25 Avalanche energy rated (UIS)Con

SiHF22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS at TJ max. (V) 650 High EAR CapabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower Figure-of-Merit Ron x QgQg max. (nC) 98 100 % Avalanche TestedQgs (nC) 17Qgd (nC) 25 Ultra Low RonConfiguration Single dV/dt Ruggedness Ultra Low G

SiHF22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesAvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Availa

SiHF28N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRMRDS(on) max. at 25 C () VGS = 10 V 0.123 Low figure-of-merit (FOM): Ron x QgQg (Max.) (nC) 120 Low input capacitance (Ciss)Qgs (nC) 17 Low switc

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs

IRFIBF20G, SiHFIBF20GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 8.0RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 4.7 Low Thermal ResistanceQgd (nC) 21 Lead (Pb)-free AvailableConfiguration SingleDESCRIPT

IRFIBF20G, SiHFIBF20GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 8.0RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 4.7 Low Thermal ResistanceQgd (nC) 21 Lead (Pb)-free AvailableConfiguration SingleDESCRIPT

IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

EMF21 COMPLEX TRANSISTOR ARRAY Features Epitaxial Planar Die Construction One PNP Bipolar Transistor and One NPN Pre-Biased Transistor Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-563 Mechanical Data Case: SOT-563 (3) (2) (1)6 5 4 Case Material: Molded Plastic, Green Molding

PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

FF225R12ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe

PD - 95944AIRF2805SPbFIRF2805LPbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 4.7ml 175C Operating TemperatureGl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxID = 135ASl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the lates

Technische Information / Technical InformationIGBT-ModuleFF225R17ME3IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoDUAL3 module with trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspan

Technische Information / Technical InformationIGBT-ModulFF200R33KF2CIGBT-ModuleVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannung T = 25C 3300vjV VCESCollector-emitter voltage T = -25C 3300vjKollektor-Dauergleichstrom T = 80C, T = 150C I 200 AC vj max C nomContin

Technische Information / Technical InformationIGBT-ModulFF225R17ME4IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motora

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

FF225R17ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTC / TIMEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and PressFIT / NTC / TIMV = 1700VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives USV-S

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie

Technische Information / Technical InformationIGBT-ModuleFF200R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

IRF250P224 MOSFET StrongIRFET V 250V D DSS RDS(on) typ. 9.0m GApplications max 12m UPS and Inverter applications SI 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

Technische Information / Technical InformationIGBT-ModuleFF200R12KE3IGBT-modulesIGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 200 AC vj max C nomContinuous DC collector current T = 25C, T = 150C I 295 A

Technische Information / Technical InformationIGBT-ModuleFF200R12KT3_EIGBT-modules62mm C-Serien Modul mit gemeinsamen Emitter 62mm C-series module with common emitter Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor

Technische Information / Technical InformationIGBT-ModuleFF200R06KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 600 Vvj CESColle

PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance

/ Technical InformationIGBT-FF225R17ME4_B11IGBT-ModuleEconoDUAL3 / IGBT4 and diode andPressFIT / NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC

FF200R12KS4P62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten und bereits aufgetragenemThermal Interface Material62mm C-Series module with the fast IGBT2 for high-frequency switching and pre-applied Thermal InterfaceMaterialV = 1200VCESI = 200A / I = 400AC nom CRMPotentielle Anwendungen Potential Applications Anwendungen fr Resonanz Umrichter Reso

/ Technical InformationIGBT-DF200R12PT4_B6IGBT-modulesEconoPACK4 / IGBT4 and diode andNTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC

/ Technical InformationIGBT-FF225R12ME3IGBT-modulesEconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1200 V

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

/ Technical InformationIGBT-FF225R12ME4_B11IGBT-modulesEconoDUAL3 /IGBT4HEpressfitNTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC / Preliminary DataV = 1200VCESI = 225A / I = 450AC no

Technische Information / Technical InformationIGBT-ModuleFD400R33KF2C-KIGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannung T = 25C 3300vjV VCESCollector-emitter voltage T = -25C 3300vjKollektor-Dauergleichstrom T = 80C, T = 150C I 400 AC vj max C n

IRF200P223 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 9.5m GApplications max 11.5m S UPS and Inverter applications I 100A D Half-bridge and full-bridge topologies Resonant mode power supplies D DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications S Battery power

Data Sheet, Jun. 2010 Control Integrated POwer System (CIPOS) I KCS08F60F 2A I KCS08F60F 2C http://www.lspst.com For Power Management Appl i cati on CIPOS IKCS08F60F2A IKCS08F60F2C Table of contents: CIPOS Control integrated Power System .................................................................................................. 4 Features ..............

/ Technical InformationIGBT-DF200R12W1H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 30A / I = 60AC nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al

/ Technical InformationIGBT-FF200R06YE3IGBT-modulesIGBT- / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 600 Vvj CESCollector-emitter voltageDC T = 50C, T = 175C I 200 AC vj max C nomCo

PD - 95489DIRF2907ZPbFIRF2907ZSPbFIRF2907ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 75Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.5mGl Lead-FreeID = 160ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achie

Technische Information / Technical InformationIGBT-ModuleFF225R12ME4_B11IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendunge

Technische Information / Technical InformationIGBT-ModuleFF200R12KT3_EIGBT-modules62mm C-Serien Modul mit gemeinsamen Emitter 62mm C-series module with common emitter Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor

Technische Information / Technical InformationIGBT-ModulFF225R17ME4_B11IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typica

FF225R17ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC / pre-appliedThermal Interface MaterialV = 1700VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Moto

Technische Information / Technical InformationIGBT-ModuleFF200R17KE4IGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1700VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications H

Technische Information / Technical InformationIGBT-ModuleDF200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

Technische Information / Technical InformationIGBT-ModuleFF200R12KT4IGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und optimierter Emitter Controlled Diode 62mm C-series module with fast trench/fieldstop IGBT4 and optimized Emitter Controlled diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated V

Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst

FF225R12ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTC /TIMEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC /TIMV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives

/ Technical InformationIGBT-FF200R12MT4IGBT-modulesEconoDUAL2 / IGBT4 and 4diode and NTCEconoDUAL2 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / Prelimina

PD - 95493AIRF2805PbFHEXFET Power MOSFETTypical Applicationsl Industrial Motor DriveDVDSS = 55VFeaturesl Advanced Process TechnologyRDS(on) = 4.7mGl Ultra Low On-Resistancel 175C Operating TemperatureID = 75Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the latest processingtech

Technische Information / Technical InformationIGBT-ModulFF200R12KE4PIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200VC

AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Aut

Technische Information / Technical InformationIGBT-ModuleFD800R33KF2CIGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannung T = 25C 3300vjV VCESCollector-emitter voltage T = -25C 3300vjKollektor-Dauergleichstrom T = 80C, T = 150C I 800 AC vj max C nom

Technische Information / Technical InformationIGBT-ModuleFF225R12MS4IGBT-modulesEconoDUAL3 Modul mit schnellem IGBT2 fr hochfrequentes Schalten EconoDUAL3 module with fast IGBT2 for high switching frequency Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200

DF23MR12W1M1P_B11EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIMEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIMVorlufige Daten / Preliminary Data V = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features

BF2040...Silicon N-Channel MOSFET Tetrode For low noise , high gain controlled input stages up to 1GHz Operating voltage 5 V Pb-free (RoHS compliant) package Qualified according AEC Q101ESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Package Pin Configuration MarkingBF2040 SOT143 1=S 2=D 3=G2 4=G1 - - NFs BF2040R SOT143R 1=D 2=S 3

Data Sheet, Jun. 2010 Control Integrated POwer System (CIPOS) I KCS22F60F 2A I KCS22F60F 2C http://www.lspst.com For Power Management Appl i cati on CIPOS IKCS22F60F2A IKCS22F60F2C Table of contents: CIPOS Control Integrated POwer System ................................................................................................. 4 Features ...............

AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu

/ Technical InformationIGBT-FF200R12KT3IGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT- / IGBT,Inverter / Maximum Rated Values

PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las

Technische Information / Technical InformationIGBT-ModuleFZ800R33KF2CIGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannung T = 25C 3300vjV VCESCollector-emitter voltage T = -25C 3300vjKollektor-Dauergleichstrom T = 80C, T = 150C I 800 AC vj max C nomCont

Technische Information / Technical InformationIGBT-ModuleFF200R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESColle

Technische Information / Technical InformationIGBT-ModuleFD400R33KF2CIGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannung T = 25C 3300vjV VCESCollector-emitter voltage T = -25C 3300vjKollektor-Dauergleichstrom T = 80C, T = 150C I 400 AC vj max C nom

IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS RDS(on) typ. 18m Gmax 22m Applications SI 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC

Technische Information / Technical InformationIGBT-ModuleFF225R12ME4IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor Drives

Technische Information / Technical InformationIGBT-ModuleFF200R17KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT und Emitter ControlledDiode 62mm C-series module with trench/fieldstop IGBT and Emitter Controlled diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspa

Technische Information / Technical InformationIGBT-ModuleFD800R33KF2C-KIGBT-modulesIHM-A ModulIHM-A moduleVorlufige Daten / Preliminary DataV = 3300VCESI = 800A / I = 1600AC nom CRMTypische Anwendungen Typical Applications Chopper-Anwendungen Chopper Applications Traktionsumrichter Traction DrivesMechanische Eigenschaften Mechanical Features AlSi

PD - 96384AAUTOMOTIVE GRADEAUIRF2807HEXFET Power MOSFETFeaturesV(BR)DSS75Vl Advanced Planar Technology Dl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.13ml 175C Operating Temperaturel Fast SwitchingGID(Silicon Limited) 82Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS Compliantl Au

IRF200S234 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 14m Applications Gmax 16.9m Brushed Motor drive applications SI 90A D BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies D Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power sw

Data Sheet, Jun. 2010 Control Integrated POwer System (CIPOS) I KCS12F60F 2A I KCS12F60F 2C http://www.lspst.com For Power Management Appl i cati on CIPOS IKCS12F60F2A IKCS12F60F2C Table of contents: CIPOS Control Integrated POwer System ................................................................................................. 4 Features ...............

AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc

Advance Technical InformationVDSS = 75 VIXTF250N075TTrenchMVTMID25 = 140 APower MOSFET 4.4 RDS(on) 4.4 m 4.4 4.4 4.4 (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedISOPLUS i4-PakTM (5-lead) (IXTF)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 75 VVDGR TJ = 25C to 175C; RGS = 1 M 75

High Voltage, High GainVCES = 3000VIXBF20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2Isolated Tab5VGES Continuous 20 VVGEM Transient 30 V1 = Ga

Advance Technical InformationVDSS = 85 VIXTF230N085TTrenchMVTMID25 = 130 APower MOSFET RDS(on) 5.3 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeISOPLUS i4-PakTM (5-lead) (IXTF)Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 85 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Tran

VCES = 3000VHigh Voltage IGBT IXGF20N300For Capacitor DischargeIC25 = 22AApplicationsVCE(sat) 3.2V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 V12VGES Continuous 20 VIsolated Tab5VGEM Transient 30 VIC25 TC = 25C 22 A1

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF28N300BIMOSFETTM MonolithicIC90 = 28ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

VCES = 3000VHigh Voltage IGBT IXGF25N300For Capacitor Discharge IC25 = 27AApplications VCE(sat) 3.0V ( Electrically Isolated Tab)Symbol Test Conditions Maximum Ratings ISOPLUS i4-PakTMVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 27 AI

VCES = 2500VHigh Voltage IGBT IXGF25N250IC25 = 30AFor Capacitor DischargeApplicationsVCE(sat) 2.9V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 V12VCGR TJ = 25C to 150C, RGE = 1M 2500 V5VGES Continuous 20 VISOLATED TABVGEM Transient 30 V1 = Gate 5 = Collector

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VMMIX1F210N30P3Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab)trr 250nsN-Channel Enhancement ModeDAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 V Isolated TabVDGR TJ

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 200VMMIX1F230N20THiperFETTMID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C 200 V

Advance Technical InformationVDSS = 55 VIXTF280N055TTrenchMVTMID25 = 160 APower MOSFET RDS(on) 4.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS i4-PakTM (5-lead) (IXTF)VDSS TJ = 25C to 175C 55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transie

Preliminary Technical InformationHigh Voltage,VCES = 3600VIXBF20N360High Frequency,IC110 = 18ABiMOSFETTM MonolithicVCE(sat) 3.4VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 V12VGES Continuous 20 VIsolat

High Voltage IGBT VCES = 2500VIXGF20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 23 A1

BF256ABF256A is a Preferred DeviceJFET - General PurposeNChannelNChannel Junction Field Effect Transistor designed for VHF andUHF applications.http://onsemi.com Low Cost TO92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) 1 DRAIN Transfer Capacitance Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB3GATEMAXIMUM RATINGS

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number : ENA0841BTF252N-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.4mS, USFPFeatures High gain : GV=1.0dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)] Best suited for use in Electret Condenser Microphone for audio equipments and telephone

TF262THN-Channel JFETwww.onsemi.com20V, 140 to 350 A, 0.95mSFeatures Low Output Noise Voltage : VNO= --112dB typ. (VCC=2V, RL=2.2k , Cin=5pF) Ultrasmall Package Facilitates Miniaturization in End Products : 1.4mm 1.2mm 0.34mm Especially Suited for use in electret condenser microphone for audio equipments and telephones Adoption of FBET process

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MGSF2N02ELPreferred Device Power MOSFET2.8 Amps, 20 Volts, N-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. http://onsemi.comFeatures2.8 A, 20 V Pb-Free Packages are AvailableRDS(on) = 85 mW (max) Low RDS(on) Provides Higher

MMBF2201N, NVF2201NPower MOSFET300 mAmps, 20 VoltsN-Channel SC-70/SOT-323These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andbattery-powered products su

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMDF2P02HDPreferred DevicePower MOSFET2 Amps, 20 VoltsP-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.MiniMOSt devices are designed for use in

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBF2201NT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsN-Channel SC-70/SOT-323These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andbattery-powered p

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTF2955, NVF2955,NVF2955PPower MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features Design for low RDS(on) http://onsemi.com Withstands High Energy in Avalanche and Commutation ModesV(BR)DSS RDS(on) TYP ID MAX AEC-Q101 Qualified - NVF2955, NVF2955P-60 V 145 mW @ -10 V -2.6 A These Devices are Pb-Free and are RoHS CompliantApplications P-Channel Power Supp

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMDF2P02EPower MOSFET2 Amps, 25 VoltsP-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a low reverse recovery time. MiniMOStdevices are designed for use in low voltage, high speed

MMDF2C03HDPreferred DevicePower MOSFET2 Amps, 30 VoltsComplementary SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghigh energy in the avalanche and commutation modes and thehttp://onsemi.comdrain-to-source diode has a very low reverse recovery time.MiniMOSt devices are designed for us

NTF2955, NVF2955Power MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features Design for low RDS(on) Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com AEC-Q101 Qualified - NVF2955 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAX-60 V 145 mW @ -10 V -2.6 AApplications Power SuppliesP-Channel PWM Motor

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FCPF250N65S3R0LMOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tail

MMBF2201N, NVF2201NPower MOSFET300 mAmps, 20 VoltsN-Channel SC-70/SOT-323These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andbattery-powered products su

Ordering number : ENA1285BTF202THCN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.0mS, VTFPFeatures Ultrasmall package facilitates miniaturization in end products Especially suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristics Excellent transient characteristics Adoption of FBET process

MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90

TF256Ordering number : ENA1616ASANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser MicrophoneTF256ApplicationsFeatures High gain : GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)] Best suited for use in electret condenser

MGSF2N02EL,MVSF2N02ELMOSFET N-Channel,SOT-232.8 A, 20 Vwww.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal2.8 A, 20 Vfor use in space sensitive power management circuitry.RDS(on) = 85 mW (max)Features Low RDS(on) Provides Higher Efficiency and Extends Battery LifeN-Channel

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTF2955, NVF2955,NVF2955PPower MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features TMOS7 Design for low RDS(on) http://onsemi.com Withstands High Energy in Avalanche and Commutation ModesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NVF2955, NVF2955P-60 V 145 mW @ -10 V -2.6 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplications Pow

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTF2955, NVF2955Power MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features Design for low RDS(on) Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com AEC-Q101 Qualified - NVF2955 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAX-60 V 145 mW @ -10 V -2.6 AApplications Power SuppliesP-Channel PWM Motor

MMBF2202PT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsP-Channel SC-70/SOT-323These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andbattery-powered p

MGSF2N02EL,MVSF2N02ELPower MOSFET2.8 Amps, 20 Volts, N-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry.2.8 A, 20 VFeaturesRDS(on) = 85 mW (max) Low RDS(on) Provides Higher Efficiency and Extends Battery Life

EMF23XV6T5Dual Transistor - Power ManagementNPN/PNP Dual (Complementary)http://onsemi.comFeatures Low VCE(SAT), t0.5 V(3) (2) (1) These are Pb-Free DevicesR1MAXIMUM RATINGSQ1 Q2Q1Rating Symbol Value UnitR2Collector-Base Voltage VCBO 50 VdcCollector-Emitter Voltage VCEO 50 Vdc (4) (5) (6)Collector Current IC 100 mAdcQ2Rating Symbol Value Unit6Colle

NTF2955, NTF2955PPower MOSFET-60 V, -2.6 A, Single P-Channel SOT-223Features TMOS7 Design for low RDS(on) Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Pb-Free Packages are AvailableApplicationsV(BR)DSS RDS(on) TYP ID MAX Power Supplies-60 V 145 mW @ -10 V -2.6 A PWM Motor ControlP-Channel ConvertersD Power Manage

FCPF250N65S3L1Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 12 A, 250 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

ON SemiconductortBF245AJFET VHF/UHF AmplifiersBF245BNChannel DepletionMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 30 VdcDrainGate Voltage VDG 30 Vdc12GateSource Voltage VGS 30 Vdc3BF244A, BF244BDrain Current ID 100 mAdcCASE 2911, STYLE 22Forward Gate Current IG(f) 10 mAdcTO92 (TO226AA)Total Device Dissipation @ TA

Ordering number : ENA1617BTF256THN-Channel JFEThttp://onsemi.com20V, 140 to 450 A, 1.7mS, VTFPFeatures High gain : GV=2.7dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteris

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMDF2N02EPower MOSFET2 Amps, 25 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a low reverse recovery time. MiniMOSt2 AMPERES, 25 VOLTSdevices are designed for use in lo

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number : ENA0842ATF252THN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.4mS, VTFPFeatures High gain : GV=1.0dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristi

UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MT Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at po

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone. FEATURES * Good voltage characteristics and transient characteristics. ORDERING INFORMATION Ordering Number Pin Assignment Pac

UNISONIC TECHNOLOGIES CO., LTD TF212 Preliminary JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF212 uses advanced trench technology to provide excellent RDS (ON), low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphoneapplications. FEATURES* Suited for use in audio, telephone capacitor microphones. * G

UNISONIC TECHNOLOGIES CO., LTD 6N70K-MT Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70K-MT is an N-channel mode power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70K-MT is universally applied in high efficiency switch m

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s

UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UNISONIC TECHNOLOGIES CO., LTD 10N65K-MTQ Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MTQ is an N-channel mode power MOSFETusing UTCs advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

UNISONIC TECHNOLOGIES CO., LTD UF2N30 Preliminary Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30 is an N-channel enhancement mode Power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * 2A, 300V, RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 4N100 Preliminary Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTCs advanced technology to provide the customers with high switching speed and high breakdown voltage. 1TO-220F1 FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 40N15 Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 40N15 is a N-channel enhancement MOSFET, it uses UTCs advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7.0A, 800V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in 11allowing a minimum on-state resistance and superior switching TO-220F1 TO-220F2pe

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per

UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTCs advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s

UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switchingperfo

UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced usingUTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli

UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power 1 1switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. TO-220F1TO-220F2 FEATURES

UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially. FEATURES * Good voltage characteristics and transient characteristics. ORDERING INFORMATION Ordering Number Pin Assignment Pa

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTCs perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati

UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 11TO-220F1TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON)charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2* R 3.7 @ V =10V, I =2.0A DS(ON) GS D* Low

UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant an

UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir

UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N80 uses UTCs advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFETadopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also ca

UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio

UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1speed, low thermal resistance, usually used at telecom and 1computer application. TO-220F1 TO-220F2 FEATURES * RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 20N70K-MT Power MOSFET 20A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N70K-MT is an N-channel Power MOSFET using1UTCs advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. TO-220F2 The UTC 20N70K-MT is generally applied in high efficient DC to DC converters, PWM motor co

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s

UNISONIC TECHNOLOGIES CO., LTD 17P10 Power MOSFET -17A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 17P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC convert

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio

UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 1TO-220 TO-220F DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is 11designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche TO-220F2TO-220F1characteristics. This power MOSFET is usually used

UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching 1applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 FEAT

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pu

UNISONIC TECHNOLOGIES CO., LTD 10N70 Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS (ON), low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphoneapplications. FEATURES*Suited for use in audio, telephone capacitor mi

UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F FEATURES *

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of swi

UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary, planar 1stripe, DMOS technology. 1These devices are suited for high efficiency switch mode power TO-220F1 TO-220F2supply. To minimize on-state res

UNISONIC TECHNOLOGIES CO., LTD 7NM70 Power MOSFET 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM70 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converte

UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw

UNISONIC TECHNOLOGIES CO., LTD 7N65-R Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MTQ Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

APTLGF210U120T Zero Voltage switching VCES = 1200V Single switch IC = 210A @ Tc = 80C NPT IGBT Power Module Application C1 C2ISOLATED+12VAUXILIARY Wide output range converters GNDPOWERSUPPLY Induction heating UNDERVOLTAGELOCKOUT X-Ray power supplies _QSIGNALHIGH ZVS-PWM Uninterruptible Power Supplies PROCESSING FREQUENCYDRIVERTRAN

TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH

TYPICAL PERFORMANCE CURVESAPT35GP120JDF2APT35GP120JDF21200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

APTGF20X60RTP2 APTGF20X60BTP2 Input rectifier bridge + VCES = 600V Brake + 3 Phase Bridge IC = 20A @ Tc = 80C NPT IGBT Power Module Application AC Motor control Features Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - A

APTGF200U60D4 Single switch VCES = 600V IC = 200A @ Tc = 80C NPT IGBT Power Module Application Welding converters 1 Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 3Features Non Punch Through (NPT) fast IGBT 5- Low voltage drop - Low tail current 2- Switching frequency up to 50 kHz - Soft recovery parallel diodes

TYPICAL PERFORMANCE CURVESAPT35GP120B2DF2APT35GP120B2DF21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100

TYPICAL PERFORMANCE CURVESAPT40GP90B2DF2APT40GP90B2DF2900V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA R

APT50GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPfiswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low

APT45GP120B2DF2TYPICAL PERFORMANCE CURVESAPT45GP120B2DF21200VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCC Low Conduction Loss 10

TYPICAL PERFORMANCE CURVES APT45GP120JDF2APT45GP120JDF21200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss

APTGF20X60E2 APTGF20X60P2 VCES = 600V 3 Phase bridge IC = 20A @ Tc = 80C NPT IGBT Power Module Application AC Motor control Features Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes Pin out: APTGF20X60E2 (Long pins) - Low diode VF - Low leakage current N- U V W

APTGF25H120T3 Full - Bridge VCES = 1200V IC = 25A @ Tc = 80C NPT IGBT Power Module Application 13 14 Welding converters Switched Mode Power Supplies Q1 Q3 Uninterruptible Power Supplies CR1 CR31118 Motor control 19 10Features 22 7 Non Punch Through (NPT) Fast IGBT - Low voltage drop 23 8- Low tail current Q2 Q4CR2 CR4- Switching

APTGF25DDA120T3 Dual Boost Chopper VCES = 1200V IC = 25A @ Tc = 80C NPT IGBT Power Module Application 13 14 AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 CR2Features Non Punch Through (NPT) Fast IGBT 22 7- Low voltage drop - Low tail current 23 8- Switching frequency up to 50 kHz Q1 Q2- Soft recovery paral

APTGF25DSK120T3 Dual Buck chopper VCES = 1200V IC = 25A @ Tc = 80C NPT IGBT Power Module Application 13 14 AC and DC motor control Switched Mode Power Supplies Q1 Q2 1811 Features Non Punch Through (NPT) Fast IGBT 1019- Low voltage drop 22 7- Low tail current - Switching frequency up to 50 kHz 23 8- Soft recovery parallel diodes - Low diode

APTGF25X120E2 APTGF25X120P2 VCES = 1200V 3 Phase bridge IC = 25A @ Tc = 80C NPT IGBT Power Module Application AC Motor control Features Non Punch Through (NPT) IGBT - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes Pin out: APTGF25X120E2 (Long pins) - Low diode VF - Low leakage current - Avalanc

TYPICAL PERFORMANCE CURVES APT40GP90JDF2APT40GP90JDF2900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SS

TYPICAL PERFORMANCE CURVES APT65GP60L2DF2APT65GP60L2DF2600V POWER MOS 7 IGBTTO-264MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GC Low Conduction Loss 100 kH

APTLGF280U120T Zero Voltage switching VCES = 1200V Single switch IC = 280A @ Tc = 80C NPT IGBT Power Module Application C1 C2ISOLATED+12VAUXILIARY Wide output range converters GNDPOWERSUPPLY Induction heating UNDERVOLTAGELOCKOUT X-Ray power supplies _QSIGNALHIGH ZVS-PWM Uninterruptible Power Supplies PROCESSING FREQUENCYDRIVERTRAN

TYPICAL PERFORMANCE CURVESAPT40GP60JDF2APT40GP60JDF2600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"ISOTOPfi Low Conduction Loss

TYPICAL PERFORMANCE CURVES APT65GP60JDF2APT65GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"switchmode power supplies. ISOTOP Low Conduction Loss 1

APTGF200U120D Single Switch VCES = 1200V IC = 200A @ Tc = 80C with Series diodes NPT IGBT Power Module Application EK Zero Current Switching resonant mode ECFeatures Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes G CK- Low diode VF - Low leakage current - A

SUF2001Dual N and P-channel Trench MOSFET30V Dual N- and P-channel Trench MOSFET Features Low VGS(th): VGS(th)=1.0~3.0V Small footprint due to small package Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A) Ordering Information Part Number Marking Code Package SOP-8 SUF2001 SUF2001 SOP-8 Marking Information

VDS 1200 VCMF20120D-Silicon Carbide Power MOSFET ID(MAX) 42 AZ-FETTM MOSFET RDS(on) 80m N-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantTO-247-3 Benefits Hi

Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst

Document Number: MRF21010Freescale SemiconductorRev. 9, 5/2006Technical DataRF Power Field Effect TransistorsMRF21010LR1N--Channel Enhancement--Mode Lateral MOSFETsMRF21010LSR1Designed for W--CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierapplications. To be used in Class AB for PCN--PCS/cellular ra

Document Number: MRF21045Freescale SemiconductorRev. 12, 10/2008Technical DataRF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for W--CDMA base station applications with frequencies from 2110 MRF21045LR3to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-MRF21045LSR3tions. To be used in Class AB for PCN -- PCS/cellular r

Document Number: MRF21030Freescale SemiconductorRev. 12, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for PCN and PCS base station applications with frequencies fromMRF21030LR32000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierMRF21030LSR3applications. To be used in Class AB for PCN - PCS/cellula

Semiconductor IRF220, IRF221,IRF222, IRF2234.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,N-Channel Power MOSFETsOctober 1997Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2MOSFETs designed, tested, and guaranteed to withstand aspecified

FSF254D, FSF254R18A, 250V, 0.170 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 18A, 250V, rDS(ON) = 0.170 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD

FRF250D, FRF250R,FRF250H23A, 200V, 0.115 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 23A, 200V, RDS(on) = 0.115TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

FSF250D, FSF250R24A, 200V, 0.110 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD

FRF254D, FRF254R,FRF254H17A, 250V, 0.185 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 17A, 250V, RDS(on) = 0.185TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

UF28100V RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 100W, 100-500 MHz, 28V Features N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source

LF2802A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 2W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT

UF2805B RF Power MOSFET Transistor Released; RoHS Compliant 20 Jan 11 5W, 100-500 MHz, 28V Package Outline Features N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor 100 MHz to 500 MHz operation ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter

MRF275L The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 500MHz, 28V Designed for broadband commercial and military applica-Product Image tions using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband perform-ance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N-Cha

UF28150J RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 150W, 100MHz-500MHz, 28V Features Package Outline DMOS structure Lower capacitance for broadband operation Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3 Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS

LF2805A RF Power MOSFET Transistor M/A-COM Products Released; RoHS Compliant 5W, 500-1000MHz, 28V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RAT

BF257DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 160V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.0

IRF250SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

IRF240SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

BF258DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 250V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.0

BF257CSM4SILICON PLANAR NPN HIGHMECHANICAL DATAVOLTAGE TRANSISTOR IN A Dimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)0.23rad.(0.009)3 20.234 1min.(0.009)FEATURES High Voltage1.02 0.20 2.03 0.20(0.04 0.008) (0.08 0.008) Ceramic Surface Mount

Product DatasheetSeptember 7, 2007DC - 20 GHz Discrete power pHEMT TGF2022-06Key Features and Performance Frequency Range: DC - 20 GHz > 28 dBm Nominal Psat 58% Maximum PAE 36 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 0.6mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 45-75mA(Under RF Drive, Id r

TGF2023-1050 Watt Discrete Power GaN on SiC HEMTKey Features Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 mmPrimary Applications Defense & Aerospace Broadband Wir

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-04Key Features and Performance Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA)

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-08Key Features and Performance Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 8mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 600-1000mA (Under RF Drive, Id rises from 600mA to 1920mA)

TGF2023-0525 Watt Discrete Power GaN on SiC HEMTKey Features Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.10 mmPrimary Applications Defense & Aerospace Broadban

TGF2961-SD1 Watt DC-4 GHz Packaged HFET Key Features Frequency Range: DC-4 GHzNominal 900 MHz Application Board Performance: TOI: 44 dBm 31 dBm Psat, 30 dBm P1dB Gain: 18 dB Input Return Loss: -15 dB Output Return Loss: -7 dB Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical) Package Dimensions: 4.5 x 4 x 1.5 mm900 MHz Application Board Primar

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-02Key Features and Performance Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 150-250mA (Under RF Drive, Id rises from 150mA to 480mA)

TGF2960-SD0.5 Watt DC-5 GHz Packaged HFET Key Features Frequency Range: DC-5 GHzNominal 900 MHz Application Board Performance: TOI: 40 dBm 28 dBm Psat, 27 dBm P1dB Gain: 19 dB Input Return Loss: -10 dB Output Return Loss: -5 dB Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V (Typical) Package Dimensions: 4.5 x 4 x 1.5 mm900 MHz Application Board Pri

Product DatasheetSeptember 7, 2007DC - 20 GHz Discrete power pHEMT TGF2022-48Key Features and Performance Frequency Range: DC - 20 GHz > 37 dBm Nominal Psat 58% Maximum PAE 45 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 4.8mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 360-600mA(Under RF Drive, Id

Product DatasheetAugust 22, 2007DC - 20 GHz Discrete power pHEMT TGF2022-24Key Features and Performance Frequency Range: DC - 20 GHz > 34 dBm Nominal Psat 58% Maximum PAE 42 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 2.4mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 180-300mA(Under RF Drive, Id r

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-12Key Features and Performance Frequency Range: DC - 12 GHz > 42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 12mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 900-1500mA (Under RF Drive, Id rises from 900mA to 2560mA

Product DatasheetSeptember 7, 2007DC - 20 GHz Discrete power pHEMT TGF2022-12Key Features and Performance Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 1.2mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA(Under RF Drive, Id

Product DatasheetSeptember 7, 2007DC - 20 GHz Discrete power pHEMT TGF2022-60Key Features and Performance Frequency Range: DC - 20 GHz > 38 dBm Nominal Psat 57% Maximum PAE 12 dB Nominal Power Gain Suitable for high reliability applications 6.0mm x 0.35um Power pHEMT Nominal Bias Vd = 8-12V, Idq = 448-752mA (Under RF Drive, Id rises from 448mA to 1480m

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240BF241TO-92Plastic PackageCBEA.M.Mixer, IF Amplifiers in AM/ FM Receiver ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25C unless otherwise specified)DESCRIPTION SYMBOL Value UNITSCollector Emitter Voltage VCEO 40 VCollector Base Voltage

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259TO-39Metal Can PackageINTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BF257 BF258 BF259 UNITSVCEOCollector Emit

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP LOW VOLTAGE FAST SWITCHING POWER TRANSISTOR 2CF2325Pin Configuration SOT-891= BASE Plastic Package2= COLLECTOR3= EMITTERMarking- CDIL2CF2325For Emergency Lighting, Led, CCFL drivers (back Lighting), Voltage Regulation and Relay driver ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER TRANSISTORS CJF2955 PNP CJF3055 NPNTO-220FP Fully IsolatedPlastic PackageGeneral Purpose Amplifier and Switching Applications.ABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector Emitter (Sustaining) Voltage VCEO (sus) 90 VCollector Emitter Voltage VCES 90

SEMICONDUCTORKGF25N120KDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand

SEMICONDUCTORKGF20N60PATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Ti

SEMICONDUCTORKGF20N60KDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T

KF2N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF2N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9

KHB011N40P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB011N40P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 400V

KF2N60LSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description B DDIM MILLIMETERSThis planar stripe MOSFET has better characteristics, such as fastA 7.20 MAXswitching time, low on resistance, low gate charge and excellent B 5.20 MAXC 0.60 MAXavalanche characteristics. It is mainly suitable for switching mode PD 2.50 MAXDEPTH:0.2E 1.15 MAX

KF2N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF2N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching mode LC D_A 6.60 + 0.20_B 6.10 + 0.20power supplies.

KHB019N20P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB019N20P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for DC/DC convertersBB 15.95 MAXQ

About New s Contact Employment Site Home keyword partnumbersearch:search:PPF240M (#45796)PackageN Channel MOSFET(none)Division Lawrence Datasheet(none)Mil-SpecShipping Contact Microsemi(none)Qual DataMaximum Electrical Rating Symbol Max UnitBreakdown Voltage Drain-to-Source BVDSS 200 VDrain Current (Continuous) (TA=100C) ID1 11 A (TA=25C) ID2 18 A

P we MOS Eo r F T O T IEU LNUntmmiP cae T 20akgF O-2AF 0 6C M2F 0 3 6 0 00 V2A 000020F60C3M F aueetrL wRoONFsS tat wihncig Ioae akgs

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SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2196Case : MTO-3P(Unit : mm)(F20W50VX2)500V 20AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh voltage power supplyInverterR

F 5 6C M2F 0 P C A A T RS I DA MSH R C E ITC IGRA Typical Output Characteristics Transfer Characteristics Static Drain-Source On-state Resistance vs Drain Current

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P we MOS Eo r F T O T IEU LNUntmmiP cae T 20akgS O-2F 0 6C2S 0 3 6 0 0 0 V2A 000020S60C3 F aueetr L wRoONFsS t at wihncig

P we MOS Eo r F T O T IEU LNUntmmiP cae O-PakgMT 3F 4 0 32W6C 6 0 40 V2A 0000 24W60C3F aueetrL wRoONFsS tat wihncig

EMF24 Power management (dual transistors) FEATURES SOT-563 2SC4617 and DTC114E are housed independently in a package. Power management circuit Power switching circuit in a single package Mounting cost and area can be cut in half 1 MARKING: F24 TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCE

UMF21N Power management (dual transistors) DESCRIPTION Silicon epitaxial planar transistor SOT-363 FEATURES 2SA2018 and DTC114E are housed independently in a package. Power switching circuit in a single package. 1 Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile p

EMF23 Power management (dual transistors) FEATURES SOT-563 2SA1774 and DTC114E are housed independently in a package Power management circuit Power switching circuit in a single package Mounting cost and area can be cut in half 1 MARKING: F23 TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCE

AOTF2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

AOTF20B65LN2TM 650V, 20A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very low VCE(sat)VCE(sat) (TJ=25 1.54VC) Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low Turn-Of

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF20N40400V,20A N-Channel MOSFETGeneral Description Product Summary VDS500@150The AOTF20N40 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT298L/AOB298L/AOTF298L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT298L & AOB298L & AOTF298L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

AOT240L/AOB240L/AOTF240L40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT240L & AOB240L & AOTF240L uses Trench 40VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT2N60/AOTF2N60600V,2A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT2N60 & AOTF2N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 2Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOT2142L/AOTF2142L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V)

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

AOTF20C60P600V,20A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max

AOT29S50/AOB29S50/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50 & AOB29S50 & AOTF29S50 have beenfabricated using the advanced MOSTM high voltage IDM 120Aprocess that is designed to deliver high levels of RDS(ON),max 0.15performance and robustness in switching applications. Qg,typ 26.6nCBy provi

AOW20S60/AOWF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW20S60 & AOWF20S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 80Adesigned to deliver high levels of performance and RDS(ON),max 0.199robustness in switching applications. Qg,typ 20nCBy providing low RDS(on), Qg a

AOT2918L/AOB2918L/AOTF2918L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2918L & AOB2918L & AOTF2918L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOWF260660V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOWF2606 uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 51Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

AOTF20B65M2TM650V, 20A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 20AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

AOT20C60/AOB20C60/AOTF20C60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Trench Power AlphaMOS-II technology Low RDS(ON) IDM 145A Low Ciss and Crss RDS(ON),max

AOT240L/AOB240L/AOTF240L40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT240L & AOB240L & AOTF240L uses Trench 40VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOWF24040V N-Channel MOSFETGeneral Description Product SummaryThe AOWF240 uses Trench MOSFET technology that isVDS40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 83Afrequency switching performance. Power losses are

AOT2610L/AOTF2610L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2610L & AOTF2610L uses trench MOSFET 60Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOTF286L80V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V)

AOT266L/AOB266L/AOTF266L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT266L & AOB266L & AOTF266L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi

AOTF260L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOTF260L uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 92Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)