F3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CRJF390N65GC() SJMOS N-MOSFET 650V, 0.39, 11AFeatures Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650VRDS(on)_typ Much lower FOM for fast switching efficiency 0.39ID11AApplications LED/LCD/PDP TV and monitor Lighting100% Avalanche Tested100% Avalanche Tested

April 2009FGPF30N45Ttm450V, 30A PDP Trench IGBTFeatures General Description High Current Capability Using Novel Trench IGBT Technology, Fairchilds new sesries oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.55V @ IC = 30Ations where low conduction and switching losses are essential. High input impedance Fast sw

HGTP14N40F3VL14A, 400V N-Channel,Logic Level Voltage Clamping IGBTApril 1995Features Package Logic Level Gate DriveJEDEC TO-220AB Internal Voltage ClampEMITTERCOLLECTOR ESD Gate ProtectionGATE TJ = +150oCCOLLECTOR(FLANGE) Ignition Energy CapableApplications Automotive Ignition Small Engine Ignition Fuel IgnitorSymbolDescription

HSBF3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBF3202 is the high cell density trenched N-V 30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 18 m DS(ON),maxconverter applications. I 28 A DThe HSBF3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full fun

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE

MOTOROLASEMICONDUCTOR TECHNICAL DATAMGSF3441VMotorola Preffered DevicePreliminary InformationP-CHANNELLow rDS(on) Small-Signal MOSFETsENHANCEMENT-MODETMOS MOSFETTMOS Single P-ChannelrDS(0N) =78 m (TYP)Field Effect TransistorsPart of the GreenLine Portfolio of devices with energy-conserving traits.These miniature surface mount MOSFETs utilize DRAIN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3441XT1/DMGSF3441XT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsPCHANNELTMOS Single P-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 78 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DDT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3300/DAdvance InformationMMSF3300WaveFETPower Surface Mount ProductsHDTMOS Single N-ChannelSINGLE TMOSField Effect Transistor POWER MOSFET30 VOLTSRDS(on) = 12.5 mWWaveFET devices are an advanced series of power MOSFETs which utilize Motorolaslatest MOSFET technology process to achieve the low

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N03HD/DAdvance InformationMTSF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to 3.7 AMPERESachieve lo

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3010/DThe RF MOSFET LineMRF3010RF PowerField Effect TransistorNChannel EnhancementMode Lateral10 W, 1.6 GHz, 28 VMOSFETLATERAL NCHANNELBROADBAND Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,RF POWER MOSFETCW amplifier applications.D Guaranteed Performance @

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3442VT1/DMGSF3442VT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 58 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3454XT1/DMGSF3454XT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 50 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3104/DThe RF LineMRF3104Microwave LinearMRF3105Power TransistorsMRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:MRF3104 MRF3105 MRF31068.012 dB GAINOutput Power0.5 W 0.8 W 1.6 W1.551.65 GHzPower Gain 10.5 dB 9 dB 8 dBMICROW

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3442VT1/DMGSF3442VT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 58 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF323/DThe RF LineNPN SiliconMRF323RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in the 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VOutput Power = 20 Watts20 W, 400 MHzPower Gain = 10 dB MinRF POWEREfficiency = 50% M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3866/DThe RF LineNPN SiliconMRF3866R2High-Frequency Transistor Tape and reel packaging available for MRF3866R2:R2 suffix = 2,500 units per reelIC = 400 mAHIGHFREQUENCYTRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value UnitCollectorEmitter Voltage VCEO 30 VdcCollectorBase Voltage VCBO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3P03HD/DDesigner's Data SheetMMDF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 100 mWproce

MOTOROLASEMICONDUCTOR TECHNICAL DATAMGSF3442VMotorola Preffered DevicePreliminary InformationN-CHANNELLow rDS(on) Small-Signal MOSFETsENHANCEMENT-MODETMOS MOSFETTMOS Single N-ChannelrDS(0N) =58m (TYP)Field Effect TransistorsPart of the GreenLine Portfolio of devices with energy-conserving traits.These miniature surface mount MOSFETs utilize Motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF321/DThe RF LineNPN SiliconMRF321RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VdcOutput Power = 10 Watts10 W, 400 MHzPower Gain = 12 dB MinRF POWEREfficiency = 50% Min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3010/DThe RF MOSFET LineMRF3010RF PowerField Effect TransistorNChannel EnhancementMode Lateral10 W, 1.6 GHz, 28 VMOSFETLATERAL NCHANNELBROADBAND Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,RF POWER MOSFETCW amplifier applications.D Guaranteed Performance @

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF338/DThe RF LineNPN Silicon RF Power TransistorMRF338Designed primarily for wideband largesignal output and driver amplifierstages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz CharacteristicsOutput Power = 80 WattsMinimum Gain = 7.3 dBEfficiency = 50% (Min) 80 W, 400 to 512 MHzCONTR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF325/DThe RF LineNPN SiliconMRF325RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts30 W, 225 to 400 MHzMinimum Gain = 8.5 dBCONTROLLED QE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMicrowave LinearMRF3094Power TransistorsMRF3095Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Package0.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF329/DThe RF LineNPN SiliconMRF329RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts100 W, 100 to 500 MHzMinimum Gain = 7.0 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF326/DThe RF LineNPN SiliconMRF326RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 40 Watts40 W, 225 to 400 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF P

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF392/DHigh Voltage TransistorsNPN SiliconBF392COLLECTOR3BF3932BASE1EMITTERMAXIMUM RATINGSRating Symbol BF392 BF393 UnitCollectorEmitter Voltage VCEO 250 300 Vdc 123CollectorBase Voltage VCBO 250 300 VdcEmitterBase Voltage VEBO 6.0 VdcCASE 2904, STYLE 1TO92 (TO226AA)Collecto

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3C03HD/DDesigner's Data SheetMMDF3C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs30 VOLTSwhich utilize Motorolas High Cell Density HDTMOS process.NCH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P03HD/DDesigner's Data SheetMMSF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsSINGLE TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 VOLTSThese

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02Z/DAdvance InformationMMSF3P02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 3.0 AMPERESMotorolas High Cell Density TMOS process and cont

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF321/DThe RF LineNPN SiliconMRF321RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VdcOutput Power = 10 Watts10 W, 400 MHzPower Gain = 12 dB MinRF POWEREfficiency = 50% Min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3442XT1/DMGSF3442XT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 58 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLASEMICONDUCTOR TECHNICAL DATAMGSF3442XMotorola Preffered DevicePreliminary InformationN-CHANNELLow rDS(on) Small-Signal MOSFETsENHANCEMENT-MODETMOS MOSFETTMOS Single N-ChannelrDS(0N) =58m (TYP)Field Effect TransistorsPart of the GreenLine Portfolio of devices with energy-conserving traits.These miniature surface mount MOSFETs utilize Motorola

MOTOROLASEMICONDUCTOR TECHNICAL DATAMGSF3455VMotorola Preffered DevicePreliminary InformationP-CHANNELLow rDS(on) Small-Signal MOSFETsENHANCEMENT-MODETMOS MOSFETTMOS Single P-ChannelrDS(0N) =80 m (TYP)Field Effect TransistorsPart of the GreenLine Portfolio of devices with energy-conserving traits.These miniature surface mount MOSFETs utilize DRAIN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3207/DProduct PreviewMMDF3207Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.8 AMPERESlatest MOSFET technology process to achieve the lowes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3300/DAdvance InformationMMSF3300WaveFETPower Surface Mount ProductsHDTMOS Single N-ChannelSINGLE TMOSField Effect Transistor POWER MOSFET30 VOLTSRDS(on) = 12.5 mWWaveFET devices are an advanced series of power MOSFETs which utilize Motorolaslatest MOSFET technology process to achieve the low

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3455XT1/DMGSF3455XT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsPCHANNELTMOS Single P-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 80 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N02HD/DAdvance InformationMTSF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to 3.8 AMPERESachieve lo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3203/DProduct PreviewMTSF3203Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to4.9 AMPERESachieve lowest poss

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N02HD/DDesigner's Data SheetMTSF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to4.0 AMPERESachiev

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3C03HD/DDesigner's Data SheetMMDF3C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs30 VOLTSwhich utilize Motorolas High Cell Density HDTMOS process.NCH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N04HD/DDesigner's Data SheetMMDF3N04HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. These 3.4 AMPERESmini

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3455VT1/DMGSF3455VT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsPCHANNELTMOS Single P-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 80 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3205/DProduct PreviewMMSF3205Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs11 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. These20 VOLTSmini

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3454XT1/DMGSF3454XT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 50 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMRF3094Microwave LinearMRF3095Power TransistorsMRF3096Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Packag

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3203/DProduct PreviewMTSF3203Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to4.9 AMPERESachieve lowest poss

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built

MOTOROLASEMICONDUCTOR TECHNICAL DATAMGSF3455XMotorola Preffered DevicePreliminary InformationP-CHANNELLow rDS(on) Small-Signal MOSFETsENHANCEMENT-MODETMOS MOSFETTMOS Single P-ChannelrDS(0N) =80 m (TYP)Field Effect TransistorsPart of the GreenLine Portfolio of devices with energy-conserving traits.These miniature surface mount MOSFETs utilize DRAIN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built

Order this documentMOTOROLAby MJF3055/DSEMICONDUCTOR TECHNICAL DATANPNMJF3055ComplementaryPNPMJF2955Silicon Power Transistors. . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY CollectorEmitter Sustaining V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3454VT1/DMGSF3454VT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 50 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3207/DProduct PreviewMMDF3207Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.8 AMPERESlatest MOSFET technology process to achieve the lowes

MOTOROLASEMICONDUCTOR TECHNICAL DATAMGSF3441XMotorola Preffered DevicePreliminary InformationP-CHANNELLow rDS(on) Small-Signal MOSFETsENHANCEMENT-MODETMOS MOSFETTMOS Single P-ChannelrDS(0N) =78 m (TYP)Field Effect TransistorsPart of the GreenLine Portfolio of devices with energy-conserving traits.These miniature surface mount MOSFETs utilize DRAIN

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3094/DThe RF LineMicrowave LinearMRF3094Power TransistorsMRF3095Designed for Class A, common emitter linear power amplifiers. Specified 20 Volt, 1.6 GHz CharacteristicsOutput Power 0.5, 0.8, 1.6 WattsGain 9.012 dB9.012 dB1.551.65 GHz Low Parasitic Microwave Stripline Package0.5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3305/DProduct PreviewMMSF3305Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs9.1 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. These30 VOLTSmin

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3455VT1/DMGSF3455VT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsPCHANNELTMOS Single P-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 80 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF326/DThe RF LineNPN SiliconMRF326RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 40 Watts40 W, 225 to 400 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF P

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N04HD/DDesigner's Data SheetMMDF3N04HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. These 3.4 AMPERESmini

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N03HD/DDesigner's Data SheetMTSF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to3.8 AMPERESachiev

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3200Z/DProduct PreviewMMDF3200ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas11.5 AMPERESlatest MOSFET technology process to achieve the lo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3442XT1/DMGSF3442XT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 58 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P03HD/DDesigner's Data SheetMMSF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsSINGLE TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 30 VOLTSThese

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N02HD/DDesigner's Data SheetMMDF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF325/DThe RF LineNPN SiliconMRF325RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts30 W, 225 to 400 MHzMinimum Gain = 8.5 dBCONTROLLED QE

MOTOROLASEMICONDUCTOR TECHNICAL DATAMGSF3454VMotorola Preffered DevicePreliminary InformationN-CHANNELLow rDS(on) Small-Signal MOSFETsENHANCEMENT-MODETMOS MOSFETTMOS Single N-ChannelrDS(0N) =50m (TYP)Field Effect TransistorsPart of the GreenLine Portfolio of devices with energy-conserving traits.These miniature surface mount MOSFETs utilize Motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF323/DThe RF LineNPN SiliconMRF323RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in the 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VOutput Power = 20 Watts20 W, 400 MHzPower Gain = 10 dB MinRF POWEREfficiency = 50% M

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3441VT1/DMGSF3441VT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsPCHANNELTMOS Single P-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 78 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3455XT1/DMGSF3455XT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsPCHANNELTMOS Single P-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 80 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3205/DProduct PreviewMMSF3205Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs11 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. These20 VOLTSmini

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF3454VT1/DMGSF3454VT1Preliminary InformationMotorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsNCHANNELTMOS Single N-ChannelENHANCEMENTMODETMOS MOSFETField Effect TransistorsrDS(on) = 50 m (TYP)Part of the GreenLine Portfolio of devices with energyconserving traits.DThes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3866/DThe RF LineNPN SiliconMRF3866R2High-Frequency Transistor Tape and reel packaging available for MRF3866R2:R2 suffix = 2,500 units per reelIC = 400 mAHIGHFREQUENCYTRANSISTORSMAXIMUM RATINGSNPN SILICONRating Symbol Value UnitCollectorEmitter Voltage VCEO 30 VdcCollectorBase Voltage VCBO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF393/DHigh Voltage TransistorNPN SiliconCOLLECTORBF39332BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1TO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 300 VdcCollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current Continu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N02HD/DDesigner's Data SheetMTSF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to4.0 AMPERESachiev

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF313/DThe RF LineNPN SiliconMRF313High-Frequency Transistor. . . designed for wideband amplifier, driver or oscillator applications in military,mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt1.0 W, 400 MHzPower Gain = 15 dB MinHIGHFREQUENCYEfficiency

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3P03HD/DDesigner's Data SheetMMDF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 100 mWproce

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3304/DProduct PreviewMMDF3304Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.3 AMPERESlatest MOSFET technology process to achieve the lowes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF329/DThe RF LineNPN SiliconMRF329RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts100 W, 100 to 500 MHzMinimum Gain = 7.0 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF313/DThe RF LineNPN SiliconMRF313High-Frequency Transistor. . . designed for wideband amplifier, driver or oscillator applications in military,mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt1.0 W, 400 MHzPower Gain = 15 dB MinHIGHFREQUENCYEfficiency

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3104/DThe RF LineMRF3104Microwave LinearMRF3105Power TransistorsMRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:MRF3104 MRF3105 MRF31068.012 dB GAINOutput Power0.5 W 0.8 W 1.6 W1.551.65 GHzPower Gain 10.5 dB 9 dB 8 dBMICROW

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTSF3N03HD/DDesigner's Data SheetMTSF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorSINGLE TMOSMicro8 devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process to3.8 AMPERESachiev

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF3P02HD/DDesigner's Data SheetMMSF3P02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 V

PD - 95719IRF3717PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous MOSFET for Notebook4.4m @VGS = 10VProcessor Power 20V 20Al Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S Dl Lead-Free2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS(on)Top Viewl Fully Characteriz

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

PD-91279EIRF3205HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

RoHS IRF3710 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(57A, 100Volts)DESCRIPTION The Nell IRF3710 are N-channel enhancement mode Dsilicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

PD - 93936AIRF3706SMPS MOSFET IRF3706SIRF3706LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.5m 77A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalan

PD - 95464AIRF3707ZCSPbFIRF3707ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3707ZCSPbFIRF3707ZCLPbFAbsolute Maximum RatingsP

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PD - 95530IRF3711ZPbFIRF3711ZSPbFIRF3711ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3711ZIRF3711ZS IRF3711ZLAbsolut

PD - 95835IRF3709ZIRF3709ZSIRF3709ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum RatingsParameter M

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

PD - 95385IRF3706PbFIRF3706SPbFSMPS MOSFETIRF3706LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedConverters with Synchronous Rectificationfor Telecom and Industrial Use VDSS RDS(on) max IDl High Frequency Buck Converters for 20V 8.5m 77AComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl

PD - 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

PD - 91477DIRF3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef

Provisional Data Sheet No.PD-6.0027AI FULLY PROTECTED POWER MOSFET SWITCHGeneral Description: Rating Summary:The IRSF3010 is a three terminal monolithicVds(clamp) 50 VSMART POWER MOSFET with built in short cir-cuit, over-temperature, ESD and over-voltage pro-Rds(on) 80 mtections.Ids(sd) 11 AThe on chip protection circuit latches off thePOWER MOSFET

PD - 90617REPETITIVE AVALANCHE AND dv/dt RATED IRFAF30900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF30 900V 4.0 2.0The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

PD - 95758AIRF3305PbFFeaturesHEXFET Power MOSFET Designed to support Linear Gate DriveApplications D 175C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and DesignRDS(on) = 8.0m Fully Avalanche RatedG Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes a ruggedplanar process technology and dev

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

PD - 97625AUTOMOTIVE GRADEAUIRF3415FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max.0.042l Fast SwitchingGl Fully Avalanche RatedID43ASl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified*SDescriptio

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S

PD - 95463IRF3704ZPbFIRF3704ZSPbFIRF3704ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3704ZIRF3704ZS IRF3704ZLAbso

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

PD -94424AAUTOMOTIVE MOSFETIRF3007Typical ApplicationsHEXFET Power MOSFET 42 Volts Automotive Electrical SystemsDFeaturesVDSS = 75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 0.0126 Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] QualifiedID = 75ASDescriptionSpecifically designed for Autom

PD - 95467AIRF3808SPbFIRF3808LPbFTypical Applications HEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 106A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe H

PD- 94062BIRF3711SMPS MOSFETIRF3711SIRF3711LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

PD - 93888BIRF3704SMPS MOSFET IRF3704SIRF3704LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 20V 9.0m 77A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

PD - 95527IRF3704PbFSMPS MOSFET IRF3704SPbFIRF3704LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 20V 9.0m 77Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)l Fully Chara

PD - 97205BIRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestproc

PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve

PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power

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PD - 90371REPETITIVE AVALANCHE AND dv/dt RATED IRF340400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF340 400V 0.55 10AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

PD- 94062DIRF3711SMPS MOSFETIRF3711SIRF3711LApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 20V 6.0m 110A for Telecom and Industrial Usel High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive Induced

PD - 94757AIRF3711ZIRF3711ZSIRF3711ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qg20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3711ZIRF3711ZS IRF3711ZLAbsolute Maximum RatingsPa

PD - 93918IRF3703SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Synchronous Rectification 30V 2.8m 210A Active ORingBenefits Ultra Low On-Resistance Low Gate Impedance to Reduce SwitchingLosses Fully Avalanche RatedTO-220ABAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100C

PD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708LApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

PD - 97542AUTOMOTIVE GRADEAUIRF3205ZAUIRF3205ZSFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast SwitchingRDS(on) max.6.5m Repetitive Avalanche Allowed up toTjmaxGID (Silicon Limited) 110A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Li

PD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 30V 12.5m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

PD - 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extre

Data Sheet No. PD 60069-HIRSF3031 (NOTE: For new designs, werecommend IRs new products IPS021 and IPS021L)FULLY PROTECTED POWER MOSFET SWITCHFeaturesProduct Summary Controlled slew rate reduces EMI Over temperature protectionVds(clamp) 50 V Over current protection Active drain-to-source clampRds(on) 200 m ESD protection Lead compatible with stan

PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique

PD - 94792IRF3711ZCSIRF3711ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qg20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3711ZCS IRF3711ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDr

PD- 91899BIRF3515SSMPS MOSFET IRF3515LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage

PD - 95333AIRF3707ZPbFIRF3707ZSPbFIRF3707ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF

PD - 93888BIRF3704SMPS MOSFET IRF3704SIRF3704LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 20V 9.0m 77A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

PD - 94971IRF3703PbFSMPS MOSFETHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 2.8m 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-220ABAbsoIute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V

PD- 95255IRF3000PbFSMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters300V 0.40W@VGS = 10V 1.6Al Lead-FreeBenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Char

PD- 94423IRF3000SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters300V 0.40W@VGS = 10V 1.6ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Characterized Avalan

PD - 9.773IRGBF30FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 900V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.7VG@VGE = 15V, IC = 11AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectif

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

PD -95528IRF3707PbFIRF3707SPbFSMPS MOSFETIRF3707LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 12.5m 62Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)TO-220ABD2Pak

PD - 95363IRF3708PbFSMPS MOSFET IRF3708SPbFIRF3708LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl Ful

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

PD - 97733AUTOMOTIVE GRADEAUIRF3315SFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceVDSS 150Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.82mGl Fast SwitchingID 21Al Fully Avalanche Rated Sl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified * DDescriptionS

Data Sheet No.PD 60133-HIRSF3011 (NOTE: For new designs, werecommend IRs new products IPS021 and IPS021L)FULLY PROTECTED POWER MOSFET SWITCHFeatures Product SummaryExtremely rugged for harsh operating environmentsVds(clamp) 50VOver-temperature protectionOver-current protectionRds(on) 200mWActive drain-to-source clampESD protectionIds(sd) 7ALead compatibl

PD - 91509CIRF3415S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Fully Avalanche RatedID = 43ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

PD-91279EIRF3205HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

PD- 95717IRFPF30PbF Lead-Free8/3/04Document Number: 91249 www.vishay.com1IRFPF30PbFDocument Number: 91249 www.vishay.com2IRFPF30PbFDocument Number: 91249 www.vishay.com3IRFPF30PbFDocument Number: 91249 www.vishay.com4IRFPF30PbFDocument Number: 91249 www.vishay.com5IRFPF30PbFDocument Number: 91249 www.vishay.com6IRFPF30PbFPeak Diode Recovery d

PD - 95812AIRF3707ZIRF3707ZSIRF3707ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 9.5m: 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3707ZIRF3707ZS IRF3707ZLAbsolute Maximum Ratings

PD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 30V 12.5m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

PD - 94792IRF3711ZCSIRF3711ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qg20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3711ZCS IRF3711ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDr

PD -90428CIRFF320REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792HEXFETTRANSISTORS JANTXV2N6792THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF320 400V 1.8 2.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

PD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708LApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch

PD- 94948IRF3711PbFSMPS MOSFETIRF3711SPbFIRF3711LPbFAppIicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 20V 6.0m 110Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive

PD - 93936CIRF3706IRF3706SSMPS MOSFETIRF3706LApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial Use 20V 8.5m 77Al High Frequency Buck Converters forComputer Processor PowerBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl Fully Characterized

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block co-FEATURES packages two pairs of high performance control and synchronous MOSFETs and is ideal for use in high- Peak efficiency up to 94% at 1.2V density two-phase synchronous buck converters. It is Two pairs of control and synchronous optimized internally for PCB layout, heat transfer and

PD - 90432CIRFF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800HEXFETTRANSISTORS JANTXV2N6800THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF330 400V 1.0 3.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

PD - 97696AAUTOMOTIVE GRADEAUIRF3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Rated G max 9.2ml Repetitive Avalanche AllowedSID87Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically des

PD - 97697AAUTOMOTIVE GRADEAUIRF3808HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.5.9ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 7.0ml Fast SwitchingSID140Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*D

PD - 9.1502BIRL3705NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175C Operating Temperature RDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic

Data Sheet No. PD 60068-IIRSF3021 (NOTE: For new designs, werecommend IRs new products IPS021 and IPS021L)FULLY PROTECTED POWER MOSFET SWITCHFeatures Product Summary Controlled slew rate reduces EMIVds(clamp) 50V Over temperature protection with auto-restart Linear current-limit protection Active drain-to-source clamp Rds(on) 200m ESD protection Lea

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

PD - 94291BIRF3808AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical Applications Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.007 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating TemperatureID = 140AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescr

PD - 95495IRF3709PbFSMPS MOSFETIRF3709SPbFIRF3709LPBFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive

PD- 91899BIRF3515SSMPS MOSFET IRF3515LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage

PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee

PD - 91309AIRF3710HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 23mG Fast Switching Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanc

PD - 95108AIRF3710SPbFIRF3710LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche Ratedl Lead-FreeID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to

PD - 97698AAUTOMOTIVE GRADEAUIRF3808SHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance VDSS 75V Dynamic dV/dT RatingRDS(on) typ.5.9m 175C Operating TemperatureG max. 7.0m Fast SwitchingS Fully Avalanche Rated ID106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

PD - 96417AUTOMOTIVE GRADEAUIRF3007HEXFET Power MOSFETFeaturesDl Advanced Planar Technology V(BR)DSS75Vl Low On-ResistanceRDS(on) typ.10.5ml 175C Operating Temperaturemax 12.6ml Fast SwitchingGID (Silicon Limited)l Fully Avalanche Rated 80Al Repetitive Avalanche Allowed SID (Package Limited)75Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive

PD - 97638AIRF3610SPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11.6ml Hard Switched and High Frequency Circuits IDS 103ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and

PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T

PD - 90518REPETITIVE AVALANCHE AND dv/dt RATED IRF360400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF360 400V 0.20 25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

PD - 94071IRF3709SMPS MOSFETIRF3709SIRF3709LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-

PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5

PD-94340BHEXFET POWER MOSFET IRF7F3704THRU-HOLE (TO-39)20V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF7F3704 20V 0.035 12A*Seventh Generation HEXFET power MOSFETs fromTO-39International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast swi

PD -91310CIRF3710S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3710S)VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating TemperatureRDS(on) = 0.025 Fast SwitchingG Fully Avalanche RatedID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely lo

PD - 96319AUTOMOTIVE GRADEAUIRF3805AUIRF3805SAUIRF3805LFeatures HEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSS55VDl Ultra Low On-ResistanceRDS(on) typ.2.6ml 175C Operating Temperaturel Fast Switching max. 3.3mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)210A l Lead-Free, RoHS CompliantSl Automotive Qualified * ID

PD - 9.1617BIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

PD - 94071IRF3709SMPS MOSFETIRF3709SIRF3709LApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCVDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m 90A for Telecom and Industrial Use High Frequency Buck Converters forServer Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive InducedTurn-

PD -91623AAPPROVEDIRF3315HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescription ID = 27ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

PD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708LApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanch

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

PD - 9.1026IRGPF30FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 900V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequencycurve VCE(sat) 3.7VG@VGE = 15V, IC = 11AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectif

IRF3717PbF-1HEXFET Power MOSFETVDS 20 V AA1 8S DRDS(on) max 4.4 m2 7S D(@V = 10V)GS3Qg (typical) 22 nC 6S DID 4 5G D20 A(@T = 25C)ASO-8Top ViewApplicationsl Synchronous MOSFET for Notebook Processor Powerl Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking SystemsFeatures BenefitsIndustry-standard pinout SO-8 Pack

PD -95110IRF3711ZCSPbFIRF3711ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 6.0m: 16nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3711ZCSPbF IRF3711ZCLPbFAbsoIute Maximum RatingsParame

PD - 90425CIRFF310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786HEXFETTRANSISTORS JANTXV2N6786THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF310 400V 3.6 1.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

PD - 94653AUTOMOTIVE MOSFETIRF3205ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 6.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

PD - 95529IRF3709ZCSPbFIRF3709ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. Uni

PD - 94149IRF3205S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 8.0mG Fast Switching Fully Avalanche RatedID = 110A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low on-res

PD - 95843IRF3717HEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous MOSFET for Notebook4.4m @VGS = 10VProcessor Power 20V 20Al Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS(on)Top Viewl Fully Characterized Avalanche Vol

TranElectric IRFCF30Die for HexfetDie SpecificationGeneral description :Hexfet power MOSFET diewith the following features:* Dynamic dv/dt rating* Ease of paralleing* Repetitve avalanche rated* Fast switchingMechanical Characteristic:Silicon ChipDimension (mm): 4.42*5.32Dimension (mil): 174*206Thickness:Metallization: AlRecommended wire(mm): 0.25 Recommende

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

BLF3G21-30UHF power LDMOS transistorRev. 01 14 February 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHz.Table 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (d

DISCRETE SEMICONDUCTORSDATA SHEETBLF346VHF power MOS transistor1996 Oct 02Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF power MOS transistor BLF346FEATURES PINNING-SOT119 High power gainPIN SYMBOL DESCRIPTION Easy power control1 s source Good thermal stability2 s source Gold metallization ensure

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BF370NPN medium frequency transistorProduct data sheet 2004 Nov 08Supersedes data of 1999 Apr 21NXP Semiconductors Product data sheetNPN medium frequency transistor BF370FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIONS3 collector IF p

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistor1998 Jul 29Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metalliza

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF324PNP medium frequency transistor1997 Jul 07Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium frequency transistor BF324FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 30 V).1

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistorProduct specification 2003 Sep 26Supersedes data of 1998 Jul 29Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metallization

DISCRETE SEMICONDUCTORSDATA SHEETBLF348VHF linear push-pull power MOStransistorOctober 1992Product specificationPhilips Semiconductors Product specificationVHF linear push-pull power MOS transistor BLF348FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Gold metallization ensuresd2k, halfpageexcellent reliabili

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCF32NPN general purpose transistor1999 Apr 22Product specificationSupersedes data of 1997 May 20Philips Semiconductors Product specificationNPN general purpose transistor BCF32FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF370NPN medium frequency transistor1999 Apr 21Product specificationSupersedes data of 1997 Jul 11Philips Semiconductors Product specificationNPN medium frequency transistor BF370FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIONS3 collector

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF378VHF push-pull power MOStransistor1998 Jul 29Product specificationSupersedes data of 1996 Oct 17Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF378FEATURES PINNING - SOT262A1 High power gainPIN SYMBOL DESCRIPTION Easy power control1d1 drain 1 Good thermal stability2d2 drain

DISCRETE SEMICONDUCTORSDATA SHEETM3D058BLF346VHF power MOS transistorProduct specification 2003 Sep 26Supersedes data of 1996 Oct 02Philips Semiconductors Product specificationVHF power MOS transistor BLF346FEATURES PINNING - SOT119A High power gainPIN DESCRIPTION Easy power control1 source Good thermal stability2 source Gold metallization ensures ex

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCF29; BCF30PNP general purpose transistors1997 May 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BCF29; BCF30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (

PMF3800SNN-channel TrenchMOS standard level FETRev. 03 11 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

BLF3G22-30UHF power LDMOS transistorRev. 01 21 June 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I

BLF3G21-6UHF power LDMOS transistorRev. 01 25 June 2008 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor for base station applications at frequencies fromHF to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 90 mA; Th = 25 C in a common source test circuit.Mode of operation f PL Gp D IMD3 PL(1dB)(MHz) (W) (dB) (%) (dB) (W)

STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

STD100N3LF3N-channel 30 V, 0.0045 , 80 A, DPAKplanar STripFET II Power MOSFETFeaturesType VDSSS RDS(on) ID PwSTD100N3LF3 30 V

STD60NF3LLN-channel 30V - 0.0075 - 60A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD60NF3LL 60V

STF34NM60NSTP34NM60N, STW34NM60NN-channel 600 V, 0.092 , 29 A MDmesh II Power MOSFETTO-220, TO-247, TO-220FPPreliminary dataFeaturesRDS(on) Type VDSS ID PTOTmax.3322STF34NM60N 600 V 0.105 29 A 40 W11STP34NM60N 600 V 0.105 29 A 210 WTO-247TO-220STW34NM60N 600 V 0.105 29 A 210 W 100% avalanche tested3 Low input capacitance and ga

STGW25S120DF3, STGWA25S120DF3Trench gate field-stop IGBT, S series 1200 V, 25 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance32 Soft and fast recovery antiparallel diode1TO-247ApplicationsTO-247 long le

STB31N65M5, STF31N65M5STP31N65M5, STW31N65M5DatasheetN-channel 650 V, 0.124 , 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO220FP, TO220 and TO-247 packagesFeaturesTABVDS @ TJMAX RDS(on ) max. IDOrder code Package3132STB31N65M5D2PAKD PAK 21TO-220FPSTF31N65M5 TO-220FPTAB710 V 0.148 22 ASTP31N65M5 TO-220STW31N65M5 TO-247332TO-220 2TO-24

STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

STF3LN80K5 N-channel 800 V, 2.75 typ., 2 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max I DS DS(on) DSTF3LN80K5 800 V 3.25 2 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FPApplication

STB200N6F3, STI200N6F3STP200N6F3N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB200N6F3 60 V

STT4NF30LN - CHANNEL 30V - 0.055 - 4A - TSOP-6STripFET MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTT4NF30L 30 V

STS7DNF30LDUAL N-CHANNEL 30V - 0.018 - 7A SO-8STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTS7DNF30L 30 V

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STS10NF30LN - CHANNEL 30V - 0.011 - 10A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS10NF30L 30 V

STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V

STH185N10F3-6Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-6 packageDatasheet - production dataFeatures VDS RDS(on) max. IDOrder codeTABSTH185N10F3-6 100 V 4.5 m 180 A Designed for automotive applications and 7 AEC-Q101 qualified1 Ultra low on-resistanceH2PAK-6 100% avalanche testedApplications Switchi

STS7C4F30LN-CHANNEL 30V - 0.018 - 7A SO-8P-CHANNEL 30V - 0.070 - 4A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS7C4F30L(N-Channel) 30 V

STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDSS @ TJmax RDS(on) max ID231STB31N65M53TAB 2D2PAK1STF31N65M5TO-220FPSTFI31N65M5 710 V

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) Order codes ID32 3TJmax max1212I PAKTO-220FPSTF33N60M2 26 A(1)TABSTI33N60M2650 V 0.125 STP33N60M2 26 ASTW33N60M233221

STSJ25NF3LLN-CHANNEL 30V - 0.0085 - 25A PowerSO-8LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTSJ25NF3LL 30 V

STD3N62K3, STF3N62K3, STU3N62K3DatasheetN-channel 620 V, 2.2 typ., 2.7 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packagesFeaturesVDS RDS(on)max. IDOrder code PackageSTD3N62K3 2.7 A DPAKSTF3N62K3 620 V 2.5 2.7 A TO-220FPSTU3N62K3 2.7 A IPAKD(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitanceG(1)

STGW15S120DF3, STGWA15S120DF3Trench gate field-stop IGBT, S series 1200 V, 15 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling3 Low thermal resistance21 Soft and fast recovery antiparallel diodeTO-247TO-247 long leadsApplicat

STS5N15F3N-channel 150 V, 0.045 , 5 A, SO-8STripFETTM III Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS5N15F3 150 V

STD95N4F3STP95N4F3 - STU95N4F3N-channel 40V - 5.4m - 80A - DPAK - TO-220 - IPAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTD95N4F3 40V

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STB90NF3LLN-CHANNEL 30V - 0.0048 - 80A D2PAKLOW GATE CHARGE STripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB90NF3LL 30 V

STD65N55LF3N-channel 55 V, 7.0 m, 80 A DPAKSTripFET III Power MOSFETFeaturesRDS(on) Order code VDSS ID Pwmax.STD65N55LF3 55 V

STD10NF30Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3AEC-Q101 qualified1 Gate charge minimizedDPAK Very low intrinsic capacitancesApplications Switching appli

STD95N4F3STP95N4F3N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220STripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTD95N4F3 40 V

STP3HNK90ZSTF3HNK90ZN-channel 900V - 0.35 - 3A - TO-220 - TO-220FPZener-protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP3HNK90Z 900 V

STD40NF3LLN-channel 30V - 0.009 - 40A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD40NF3LL 30V

STB95N4LF3STD95N4LF3N-channel 40 V, 5.0 m, 80 A DPAK, D2PAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID PDmaxSTD95N4LF3 40 V

STL80N4LLF3N-channel 40V - 0.0042 - 80A - PowerFLAT (6x5)STripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTL80N4LLF3 40V

STD90N4F3, STI90N4F3STP90N4F3, STU90N4F3N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220, IPAK, I2PAKSTripFET III Power MOSFETFeaturesRDS(on) 3Type VDSS ID Pw3max 121STD90N4F3 40 V

STL8N10LF3Automotive-grade N-channel 100 V, 25 m typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL8N10LF3 100 V 35 m 7.8 A Designed for automotive applications and 1AEC-Q101 qualified23 Logic level VGS(th)4 175 C maximum junction temperature 100% avalanche rate

STT3PF30LP-CHANNEL 30V - 0.14 - 3A SOT23-6LSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTT3PF30L 30 V

STV270N4F3N-channel 40 V, 1.25 m, 270 A, PowerSO-10STripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID (1)maxSTV270N4F3 40 V

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STH180N10F3-6N-channel 100 V, 3.9 m, 180 A, HPAK-6STripFETIII Power MOSFETFeaturesRDS(on) Order codes VDSS IDTABmax.STH180N10F3-6 100 V 4.5 m 180 A Ultra low on-resistance7 100% avalanche tested1ApplicationsH2PAK-6 High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagra

STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-CHANNEL 30V - 0.014 - 45A TO-220 - TO220FP - D2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP45NF3LL 30 V

STL8DN6LF3Dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in PowerFLAT 5x6 double island packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmaxSTL8DN6LF3 60 V

STS8NF30LN - CHANNEL 30V - 0.018 - 8A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS8NF30L 30 V

STH185N10F3-2Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., STripFET F3 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTH185N10F3-2 100 V 4.5 m 180 A Designed for automotive applications and 2AEC-Q101 qualified31 Ultra low on-resistanceH2PAK-2 100% avalanche testedApplications Swi

STB85NF3LLN-channel 30V - 0.006 - 85A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB85NF3LL 30V

STD40NF3LLN-channel 30V - 0.009 - 40A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD40NF3LL 30V

STGF35HF60W, STGW35HF60W,STGFW35HF60W35 A, 600 V Ultrafast IGBTDatasheet - production dataFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses332211ApplicationsTO-247TO-220FP Welding High frequency converters111 Power factor correction321DescriptionTO-3PFThis Ultrafast IGBT is develope

STL70N10F3N-channel 100 V, 0.0078 , 16 A STripFET III Power MOSFET in PowerFLAT 5x6 packageDatasheet production dataFeaturesRDS(on) max Order code VDSS @VGS=10V ID PTOTSTL70N10F3 100 V 0.0084 16 A 136 W1 Improved die-to-footprint ratio234 Very low thermal resistancePowerFLAT 5x6 Low on-resistanceApplications Switching applications

STC5DNF30VN-channel 30 V, 0.027 , 5 A TSSOP82.7 V - driver STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID

STC6NF30VN-channel 30V - 0.020 - 6A - TSSOP82.5V-drive STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID

STF130N10F3, STFI130N10F3,STH130N10F3-2, STP130N10F3N-channel 100 V, 7.8 m typ., 120 A STripFETIII Power MOSFET in TO-220FP, IPAKFP, HPAK-2 and TO-220 packagesDatasheet production dataFeaturesRDS(on) Order codes VDSS max. ID3STF130N10F3219.6 m 46 A12STFI130N10F3 3TO-220FP100 VIPAKFPSTH130N10F3-2 9.3 mTAB120 ASTP130N10F3 9.6 m TAB

STH250N55F3-6N-channel 55 V, 2.2 m, 180 A, HPAKSTripFET III Power MOSFETFeaturesRDS(on) Order code VDSS ID Pwmax.STH250N55F3-6 55 V 2.6 m 180 A(1) 300 W1. Value limited by package Ultra low on-resistance 100% avalanche testedH2PAK-6lApplicationSwitching applicationsDescriptionFigure 1. Internal schematic diagramThis N-channel STripFET III Power

STH180N10F3-2 N-channel 100 V, 3.9 m typ.,180 A, STripFET F3 Power MOSFET in HPAK-2 package Datasheet - production data Features RDS(on) Order code VDS ID max. STH180N10F3-2 100 V 4.5 m 180 A Ultra low on-resistence 100% avalanche tested Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-cha

BF3506TVFULL 50-60Hz RECTIFICATION BRIDGEMAIN PRODUCT CHARACTERISTICSPRELIMINARY DATASHEETIF(AV) 35A+VRRM 600VVF (max) 1.3VFEATURES AND BENEFITS-.COMPACT ISOTOP DESIGN COMPATIBLEWITH FAST DIODES, TRANSISTORS ANDPASSIVE COMPONENTS..EXCELLENT THERMAL TRANSFER JUNC-+TION TI HEATSINK.UL PENDING-DESCRIPTIONThe Bridges series from SGS-THOMSON hasbeen designed t

STL40N75LF3N-channel 75 V, 16 m typ., 10 A STripFET III Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDSS IDmax.1STL40N75LF3 75 V 19 m 10 A 234 N-channel enhancement mode Low gate chargePowerFLAT 5x6 Low threshold voltage deviceApplicationsFigure 1. Internal schematic diagram Switching

STD3NK80Z, STD3NK80Z-1STF3NK80Z, STP3NK80ZN-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAKZener-protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STP3NK80Z 800 V

STV200N55F3N-channel 55 V, 1.8 m, 200 A, PowerSO-10STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID (1)max10STV200N55F3 55 V

STP190N55LF3N-channel 55 V, 2.9 m, 120 A, TO-220STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID PDmaxSTP190N55LF3 55 V

STB70NF3LLN-channel 30V - 0.0075 - 70A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB70NF3LL 30V

STL35NF3LLN-CHANNEL 30V - 0.0055 - 35A PowerFLATLOW GATE CHARGE STripFET MOSFETTARGET DATATYPE VDSS RDS(on) IDSTL35NF3LL 30 V

STS6PF30LP-CHANNEL 30V - 0.027 - 6A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS6PF30L 30 V

STS3DPF30LDUAL P-CHANNEL 30V - 0.13 - 3A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS3DPF30L 30 V

STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60NDN-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeatures TABOrder codes VDS @TJ max. RDS(on) max. ID31STB34NM60ND321D2PAKSTF34NM60NDTO-220FP650 V 0.110 29 A STP34NM60NDTABSTW34NM60ND The worlds bes

STL35N6F3N-channel 60 V, 0.019 , 10 A STripFET III Power MOSFET in PowerFLAT 5x6 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDSTL35N6F3 60 V

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STP200N4F3STB200N4F3N-channel 40 V, 0.0025 , 120 A, D2PAK, TO-220planar STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID PwSTB200N4F3 40 V

STS15N4LLF3N-channel 40V - 0.0042 - 15A - SO-8STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS15N4LLF3 40V

SGSF324HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEEDAPPLICATIONS: SWITCH MODE POWER SUPPLIESDESCRIPTION32The SGSF324 is manufactured using1Multiepitaxial Mesa technology for cost-effectivehigh performance and uses a Hollow EmitterTO-220structure to enhance switchin

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

SGSIF344SGSIF444HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS SGSIF344 IS SGS-THOMSON PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS: SWITCH MODE POWER SUPPLIES HORIZONTAL DEFLECTION FOR COLOUR 3322TVS AND MONITORS1 1DESCRIPTIONISOWATT220 ISOWATT218The SGSIF344 and SGSIF444 are manufacturedu

STC5NF30VN-channel 30V - 0.027 - 5A - TSSOP82.7V-drive STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID

STL7DN6LF3Automotive-grade dual N-channel 60 V, 35 m typ., 6.5 ASTripFET F3 Power MOSFET in PowerFLAT 5x6 double islandDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxSTL7DN6LF3 60 V 43 m 6.5 A1 Designed for automotive application and 23AEC-Q101 qualified4 Logic level VGS(th)PowerFLAT 5x6 double island 175 C junction tempe

STL85N6F3N-channel 60 V, 0.005 , 19 A PowerFLAT (6x5)STripFET Power MOSFETPreliminary DataFeaturesRDS(on) Type VDSS IDmaxSTL85N6F3 60 V

STK22N6F3N-channel 60 V, 0.0055 , 22 A, PolarPAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) maxSTK22N6F3 60 V

STB34N65M5, STF34N65M5, STFI34N65M5,STI34N65M5, STP34N65M5, STW34N65M5N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFET in a D2PAK, TO-220FP, I2PAKFP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes ID2TJmax max313STB34N65M52D2PAK1TO-220FPSTF34N65M5I2PAKFPSTFI34N65M5 TABTAB710 V

STS11NF30LN-channel 30V - 0.0085 - 11A SO-8Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS11NF30L 30V

STP85NF3LLSTB85NF3LL-1N-CHANNEL 30V - 0.006 - 85A TO-220/I2PAKLOW GATE CHARGE STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP85NF3LL 30 V

STB32N65M5, STF32N65M5, STI32N65M5STP32N65M5, STW32N65M5N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS@ Type RDS(on) max IDTJmax 33123 12STB32N65M5 710 V

STS3DNF30LN - CHANNEL 30V - 0.055 - 3.5A - SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS3DNF30L 30 V

STGB3NC120HDSTGF3NC120HD, STGP3NC120HD7 A, 1200 V very fast IGBT with ultrafast diodeFeaturesTAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode332211Applications TO-220FPTO-220 Home applianceTAB Lighting31DescriptionDPAKThis high voltage and very fast IGBT shows an excellent trade-off between l

STD3NK100Z, STF3NK100ZDatasheetN-channel 1000 V, 5.4 typ., 2.5 A SuperMESH Power MOSFETs in DPAK and TO-220FP packagesFeaturesVDS RDS(on) max. IDOrder code PackageSTD3NK100Z DPAK1000 V 6 2.5 ASTF3NK100Z TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimizedD(2, TAB) Very low intrinsic capacitance Zener-protected

STS6DNF30VDUAL N-CHANNEL 30V - 0.026 - 6A SO-82.5V-DRIVE STripFET II POWER MOSFETTYPE VDSS RDS(on) ID

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

STGW25S120DF3, STGWA25S120DF3Trench gate field-stop IGBT, S series 1200 V, 25 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance32 Soft and fast recovery antiparallel diode1TO-247ApplicationsTO-247 long le

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V

STH245N75F3-6Automotive-grade N-channel 75 V, 2.6 m typ., 180 A STripFET F3 Power MOSFET in a HPAK-6 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTH245N75F3-6 75 V 3.0 m 180 A Designed for automotive applications and AEC-Q101 qualified7 Conduction losses reduced1 Low profile, very low parasitic inductanceH2PAK-6A

STL7N6LF3Automotive-grade N-channel 60 V, 35 m typ., 6.5 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 packageDatasheet production dataFeatures Order code VDS RDS(on) max IDSTL7N6LF3 60 V 43 m 6.5 A Designed for automotive applications and 1AEC-Q101 qualified234 Logic level VGS(th) 175 C junction temperature 100% avalanche ratedPower

STB70NF3LLN-channel 30V - 0.0075 - 70A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB70NF3LL 30V

STB85NF3LLN-channel 30V - 0.006 - 85A - D2PAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB85NF3LL 30V

STD90N4F3, STI90N4F3STP90N4F3, STU90N4F3N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220, IPAK, I2PAKSTripFET III Power MOSFETFeaturesRDS(on) 3Type VDSS ID Pw3max 121STD90N4F3 40 V

STF33N60DM6DatasheetN-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO220FP packageFeaturesVDS RDS(on) max. IDOrder codeSTF33N60DM6 600 V 128 m 25 A Fast-recovery body diode Lower RDS(on) per area vs previous generation321 Low gate charge, input capacitance and resistance 100% avalanche testedTO-220FP Extremely high dv/dt

STD30N10F7, STF30N10F7N-channel 100 V, 0.02 typ., 32 A STripFET VII DeepGATE Power MOSFETs in DPAK and TO-220FP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on) max ID PTOTSTD30N10F7 32 A 50 W100 V 0.024 TABSTF30N10F7 24 A 25 W31 Ultra low on-resistance3DPAK2 100% avalanche tested1TO-220FPApplications Switching appl

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features Minimal tail current Low conduction and switching losses Ultrafast soft recovery antiparallel diode Applications Motor drive Description These devices are based on a new advanced planar technology concept to yield an I

STS9NF30LN-CHANNEL 30V - 0.015 - 9A SO-8LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTS9NF30L 30 V

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESH process resul

STS5PF30LP-channel 30V - 0.045 - 5A SO-8STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS5PF30L 30V

STL35N15F3N-channel 150 V, 0.04 , 7 A, PowerFLAT (5x6)STripFET III Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL35N15F3 150 V

STB33N65M2, STF33N65M2,STP33N65M2, STI33N65M2N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) Order codes VDS max IDSTB33N65M233121STF33N65M2TO-220FPD2PAK650 V 0.14 24 ASTP33N65M2TAB TABSTI33N65M2 Extremely low gate charge Exce

STB160NF3LLN-channel 30V - 0.0028 - 160A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB160NF3LL 30V

STP180N10F3N-channel 100 V, 4.5 m, 120 A STripFETIII Power MOSFETTO-220FeaturesRDS(on) TABOrder codes VDSS IDmax.STP180N10F3 100 V 5.1 m 120 A Ultra low on-resistance32 100% avalanche tested1TO-220Applications High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagramPo

SGSF344HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS: SWITCH MODE POWER SUPPLIES HORIZONTAL DEFLECTION FOR COLOURTVS AND MONITORS32DESCRIPTION1The SGSF344 is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance and uses a Hollow Emitte

STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V

STP3HNK90ZSTF3HNK90ZN-channel 900V - 0.35 - 3A - TO-220 - TO-220FPZener-protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP3HNK90Z 900 V

STB180N55F3STP180N55F3N-channel 55V - 3.2m - 120A - D2PAK/TO-220STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB180N55F3 55V 3.5m 120A(1) 330WSTP180N55F3 55V 3.8m 120A(1) 330W1. Value limited by wire bonding 33121 Ultra low on-resistance 100% avalanche tested TO-220 D2PAKDescriptionThis n-channel enhancement mode Power MOSFET is the l

STB185N55F3STP185N55F3N-channel 55V - 3.2m - 120A - D2PAK/TO-220STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB185N55F3 55V 3.5m 120A(1) 330WSTP185N55F3 55V 3.8m 120A(1) 330W1. Value limited by wire bonding 33 Ultra low on-resistance121 100% avalanche testedTO-220 D2PAKDescriptionThis n-channel enhancement mode Power MOSFET is the

STGF30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor

STL30NF3LLN-CHANNEL 30V - 0.008 - 30A PowerFLATLOW GATE CHARGE STripFET MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTL30NF3LL 30 V

STD3LN62K3, STF3LN62K3STP3LN62K3, STU3LN62K3N-channel 620 V, 2.5 , 2.5 A SuperMESH3 Power MOSFETDPAK, TO-220FP, TO-220, IPAKFeaturesRDS(on) 33Order codes VDSS ID PD21max1DPAKSTD3LN62K3 2.5 A 45 W IPAKSTF3LN62K3 2.5 A(1) 20 W620 V

STL25N15F3N-channel 150 V, 0.045 , 6 A PowerFLAT (6x5) STripFET III Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL25N15F3 150 V

STS17NF3LLN-channel 30V - 0.0045 - 17A - SO-8STripFET II Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTS17NF3LL 30V

STGW15S120DF3, STGWA15S120DF3Trench gate field-stop IGBT, S series 1200 V, 15 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling3 Low thermal resistance21 Soft and fast recovery antiparallel diodeTO-247TO-247 long leadsApplicat

STS4DNF30LDual N-channel 30 V, 0.039 , 4 A SO-8STripFET Power MOSFETFeaturesType VDSS RDS(on) max. IDSTS4DNF30L 30 V

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

STB3N62K3, STD3N62K3, STF3N62K3STP3N62K3, STU3N62K3N-channel 620 V, 2.2 , 2.7 A SuperMESH3 Power MOSFETD2PAK, DPAK, TO-220FP, TO-220, IPAKFeaturesRDS(on) 33Type VDSS ID PD21max1DPAKSTB3N62K3 620 V

STD70N6F3N-channel 60 V, 8.0 m, 70 A DPAKSTripFET III Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) ID PwSTD70N6F3 60 V

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 , 30 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB2 VDSS @ RDS(on) 3 Order code ID1 TJmax max32D2PAKSTB38N65M51TO-220FP STF38N65M5

STS3C3F30LN-CHANNEL 30V - 0.050 - 3.5A SO-8P-CHANNEL 30V - 0.140 - 3A SO-8STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTS3C3F30L(N-Channel) 30 V

STK20N75F3N-channel 75 V, 0.0065 , 20 A, PolarPAKSTripFET Power MOSFETFeaturesVDSS RDS(on) maxTypeSTK20N75F3 75 V

STB160NF3LLN-channel 30V - 0.0028 - 160A - D2PAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB160NF3LL 30V

STL28NF3LLN-CHANNEL 30V - 0.0055 - 28APowerFLATLOW GATE CHARGE STripFET MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTL28NF3LL 30 V

STS8DNF3LLDual N-channel 30V - 0.017 - 8A SO-8Low gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS8DNF3LL 30V

STL8DN10LF3Automotive-grade dual N-channel 100 V, 25 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island packageDatasheet production dataFeatures Order code VDS RDS(on) max IDSTL8DN10LF3 100 V 35 m 7.8 A Designed for automotive applications and 12AEC-Q101 qualified34 Logic level VGS(th)PowerFLAT 5x6 175 C junction

STB30NM50N,STI30NM50N,STF30NM50NSTP30NM50N, STW30NM50NN-channel 500 V, 0.090 , 27 A MDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) VDSS Type ID(@Tjmax)max33121STB30NM50N 550 V

STB46NF30, STP46NF30, STW46NF30N-channel 300 V, 0.063 typ, 42 A, STripFET II Power MOSFETin D2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABRDS(on) Type VDSS max ID Pw313STB46NF30 300 V

STS4DPF30LDUAL P-CHANNEL 30V - 0.07 - 4A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS4DPF30L 30 V

STS10PF30LP-CHANNEL 30V - 0.012 - 10A SO-8STripFET II POWER MOSFETTable 1: General FeaturesFigure 1:PackageTYPE VDSS RDS(on) IDSTS10PF30L 30V

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code V R I DS DS(on) max. DSTD3NK80Z-1 800 V 4.5 2.5 A STD3NK80ZT4 800 V 4.5 2.5 A STF3NK80Z 800 V 4.5 2.5 A STP3NK80Z 800 V 4.5 2.5 A Extremely high dv/dt capabil

STS11NF3LLN-CHANNEL 30V - 0.008 - 11A SO-8LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTS11NF3LL 30 V

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

STD65N55F3N-channel 55V - 6.5m - 80A - DPAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTD65N55F3 55V

STH270N4F3-2N-channel 40 V, 1.4 m typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 packageDatasheet - production dataFeaturesOrder codes VDS RDS(on) max IDTABSTH270N4F3-2 40 V 1.7 m 180 A Conduction losses reduced23 Low profile, very low parasitic inductance, high 1current packageH2PAK-2Applications Switching applicationsDescriptionFigure 1. In

STS7NF30LN - CHANNEL 30V - 0.021 - 7A SO-8STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS7NF30L 30 V

STS2DNF30LDual n-channel 30 V, 0.09 , 3 A SO-8STripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTS2DNF30L 30V

STB270N4F3STI270N4F3 - STP270N4F3N-channel 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB270N4F3 40V

STH270N4F3-6N-channel 40 V, 1.40 m, 180 A, H2PAKSTripFET III Power MOSFETFeaturesType VDSS RDS(on) ID (1)TABSTH270N4F3-6 40 V

STS12NF30LN-channel 30V - 0.008 - 12A SO-8STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTS12NF30L 30V

STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAKSTripFET II power MOSFETGeneral featuresType VDSS RDS(on) ID33STB45NF3LL 30V

STW74NF30DatasheetN-channel 300 V, 35 m typ., 60 A STripFET II Power MOSFET in a TO247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW74NF30 300 V 45 m 60 A Exceptional dv/dt capability32 100% avalanche tested1 Low gate chargeTO-247ApplicationsD(2) Switching applicationsDescriptionG(1)This Power MOSFET series realized with STMicroele

STB30N65M5, STF30N65M5, STI30N65M5STP30N65M5, STW30N65M5N-channel 650 V, 0.125 , 22 A, MDmesh V Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB30N65M5 710 V

STGF3NC120HDN-CHANNEL 3A - 1200V TO-220FPFAST PowerMESH IGBT with Integral Damper DiodeTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGF3NC120HD 1200 V

STS9NF3LLN-CHANNEL 30V - 0.016 - 9A SO-8LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTS9NF3LL 30 V

STV240N75F3N-channel 75 V, 2.3 m, 240 A PowerSO-10STripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID maxSTV240N75F3 75 V

SGSF313SGSF313PIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS HIGH VOLTAGE CAPABILITY (450V VCEO) VERY HIGH SWITCHING SPEED: t = 35nsfTYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGEo COMPLETE CHARACTERIZATION AT 100 C U.L. RECOGNISED ISOWATT220 PACKAGE(U.L. FILE # E81734 (N)).APPLICATION 3 32 2 SWITCH MODE POWER SUPPLIES11 FLYBACK AND

STB18NF30N-channel 330 V, 160 m, 18 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STB18NF30 330 V 180 m 18 A TAB 100% avalanche tested 175 C junction temperature31ApplicationsDPAK Switching applications AutomotiveDescriptionThis Power MOSFET has been developed using Figu

STS3DPFS30P - CHANNEL ENHANCEMENT MODEPOWER MOSFET PLUS SCHOTTKY RECTIFIERTARGET DATAMAIN PRODUCT CHARACTERISTICSVDSS RDS(on) IDMOSFET30V 0.09 3AIF(AV) VRRM VF(MAX)SCHOTTKY3A 30V 0.44VSO-8DESCRIPTION: This product associates the latest low voltageStripFET in p-channel version to a low dropINTERNAL SCHEMATIC DIAGRAMSchottky diode. Such configuration is e

STB30NM60N,STI30NM60N,STF30NM60NSTP30NM60N, STW30NM60NN-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFETTO-220, TO-220FP, TO-247, D2PAK, I2PAKFeaturesRDS(on) VDSS @ Type ID PWTJmaxmax33121STB30NM60N 650 V

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

STS6DNF30LDUAL N - CHANNEL 30V - 0.022 - 6A SO-8STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTS6DNF30L 30 V

STGW40S120DF3, STGWA40S120DF3Trench gate field-stop IGBT, S series 1200 V, 40 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 40 A Tight parameter distribution Safer paralleling Low thermal resistance32 Soft and fast recovery antiparallel diode1TO-247ApplicationsTO-247 long l

STS3DNF30LN - CHANNEL 30V - 0.055 - 3.5A - SO-8PowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTS3DNF30L 30 V

STP85NF3LLSTB85NF3LL-1N-CHANNEL 30V - 0.006 - 85A TO-220/I2PAKLOW GATE CHARGE STripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP85NF3LL 30 V

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5N-channel 800 V, 2.8 typ., 2.5 A Zener-protected SuperMESH 5Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on)max ID PTOT31STD3N80K5 60 WDPAKSTF3N80K5 20 W3800 V 3.5 2.5 A21TABSTP3N80K560 WTO-220FPSTU3N80K5TAB TO-220 worldwide bes

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

STB270N4F3STI270N4F3N-channel 40 V, 1.6 m, 160 A, D2PAK, I2PAKSTripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID PTOTmaxSTB270N4F3 40 V

STW75NF30N-channel 300 V, 0.037 , 60 A, TO-247low gate charge STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID pWmaxSTW75NF30 300 V

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

STB32NM50N, STF32NM50N,STP32NM50N, STW32NM50NN-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDS ID PTOT2max.3132STB32NM50N 190 W1DPAKTO-220FPSTF32NM50N 35 W500 V 0.13 22 ASTP32NM50N 190 WTABSTW32NM50N 190 W 100% avalanche t

STx30NM60NDN-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET(with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247FeaturesVDSS @TJ RDS(on) Type IDmax max3322 2STB30NM60ND 25 AI PAK11TO-247STI30NM60ND 25 ASTF30NM60ND 650 V 0.13 25 A(1)3STP30NM60ND 25 A12D PAKSTW30NM60ND 25 A1. Limited only by maximum temperature allowed32 3 T

STH240N75F3-2, STH240N75F3-6N-channel 75 V, 2.6 m typ., 180 A STripFET III Power MOSFET in HPAK-2 and HPAK-6 packagesDatasheet - production dataFeaturesRDS(on) Order code VDSS max. ID TABSTH240N75F3-275 V

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

STS7PF30LP-CHANNEL 30V - 0.16 - 7A - SO-8STripFET II Power MOSFETGeneral featuresVDSS RDS(on) IDTypeSTS7PF30L 30V

STGF3NC120HDSTGP3NC120HD7 A, 1200 V very fast IGBTFeatures Low on-voltage drop (VCE(sat))TAB High current capability Off losses include tail current High speed332211ApplicationTO-220FPTO-220 Home appliance LightingDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal

STV250N55F3N-channel 55 V, 1.5 m, 250 A, PowerSO-10STripFET Power MOSFETFeaturesRDS(on) Type VDSS ID max10STV250N55F3 55 V

STB160N75F3STP160N75F3 - STW160N75F3N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D2PAKSTripFET Power MOSFETFeaturesRDS(on)Type VDSS ID(max.)3STB160N75F3 75V 3.7 m120 A(1) 32211STP160N75F3 75V 4 m TO-220120 A(1)TO-247STW160N75F3 75V 4 m120 A(1)1. Current limited by package31 Ultra low on-resistanceDPAK 100% Avalanche tes

STB95N4F3, STD95N4F3STP95N4F3N-channel 40 V, 5.0 m, 80 A STripFET IIIPower MOSFET in DPAK, DPAK, TO-220FeaturesRDS(on) Order codes VDSS max. ID PwTABTABSTB95N4F3

Ordering number : ENN7055BSGF31N-Channel GaAs MESFETSGF31For C to Ku-band Local Oscillator and AmplifierFeaturesPackage Dimensions Lower phase noise.unit : mm The chip surface is covered with the highly reliable2134Aprotection film.[SGF31] Super miniaturized plastic-mold package (CP4).1.9 Automatic surface mounting is available. 0.95 0.950.40.164

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

Preliminary Datasheet RJP63F3DPP-M0 R07DS0321EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching May 26, 2011Features Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 17.5A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has be

June 2000TMQFETQFETQFETQFETFQPF34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.5A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology h

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technology has bee

March 2008FDPF3860TtmN-Channel PowerTrench MOSFET 100V, 20A, 38.2mDescription General Description RDS(on) = 38.2m ( MAX ) @ VGS = 10V, ID = 5.9A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior sw

November 2013FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

September 2000TMQFETQFETQFETQFETFQAF33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technol

September 2014FCPF380N65FL1N-Channel SuperFET II FRFET MOSFET650 V, 10.2 A, 380 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 320 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

July 2011FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mFeatures Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.

QFETFQP32N12V2/FQPF32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailor

November 2013FCP380N60 / FCPF380N60N-Channel SuperFET II MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3

April 2007TMUniFETFDP39N20 / FDPF39N20200V N-Channel MOSFETFeatures Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 38 nC)stripe, DMOS technology. Low Crss ( typical 57 pF)This advanced technology has been especially

September 2000TMQFETQFETQFETQFETFQPF3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has

October 2013FDPF3N50NZN-Channel UniFETTM II MOSFET500 V, 3 A, 2.5 Features Description RDS(on) = 2.1 (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 6.2 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 2.5 pF

September 2000TMQFETFQPF3N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tail

May 2001TMQFETFQPF30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especially tailored to

December 2013FCP36N60N / FCPF36N60NTN-Channel SupreMOS MOSFET600 V, 36 A, 90 mFeatures Description RDS(on) = 81 m (Typ.) @ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductors nextgeneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC)employing a deep trench filling process that differentiates it from

October TMUniFETFDP33N25 / FDPF33N25T 250V N-Channel MOSFETFeatures Description 33A, 250V, RDS(on) = 0.094 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 36.8 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 39 pF) stripe, DMOS technology. Fast switchingThis advanced technolog

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.95A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has bee

April 2000TMQFETQFETQFETQFETFQPF33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has been

QFETFQP3N50C/FQPF3N50C 500V N-Channel MOSFETFeatures Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC )DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

May 2001TMQFETFQPF30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 22.5A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially ta

December 2010FDPF320N06LN-Channel PowerTrench MOSFET 60V, 21A, 25mFeatures Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17Aespecially tailored to minimize the on-state resistance and yet maintain superior sw

May 2007FJPF3305High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast and Switching RegulatorTO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector C

April 2000TMQFETQFETQFETQFETFQAF33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25.8A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has bee

April 2000TMQFETQFETQFETQFETFQPF3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been e

October 2001FQAF34N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21.7A, 250V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fas

HRF3205, HRF3205SData Sheet December 2001100A, 55V, 0.008 Ohm, N-Channel, Power FeaturesMOSFETs 100A, 55V (See Note)These are N-Channel enhancement mode silicon gate Low On-Resistance, rDS(ON) = 0.008power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified le

June 2007TM Motion-SPMFSBF3CH60BSmart Power ModuleFeatures General DescriptionIt is an advanced motion-smart power module (Motion-SPMTM) UL Certified No.E209204(SPM27-JA package) that Fairchild has newly developed and designed to provide 600V-3A 3-phase IGBT inverter bridge including control ICsvery compact and high performance ac motor drives mainly tar-for gate dri

QFETFQP3N50C/FQPF3N50C 500V N-Channel MOSFETFeatures Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC )DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to

August 2014FDPF33N25TN-Channel UniFETTM MOSFET250 V, 33 A, 94 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 94 m (Max.) @ VGS = 10 V, ID = 16.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 36.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 39 pF)p

September 2000TMQFETQFETQFETQFETFQPF33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technolog

August 2000TMQFETQFETQFETQFETFQPF3P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.9A, -500V, RDS(on) = 4.9 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has be

August 2014FDP39N20 / FDPF39N20N-Channel UniFETTM MOSFET200 V, 39 A, 66 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5

November 2013FQPF3N25N-Channel QFET MOSFET250 V, 2.3 A, 2.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 1.15 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC)technology has been especially tailored

QFET P-CHANNEL FQPF3P20FEATURESBVDSS = -200V Advanced New DesignRDS(ON) = 2.7 Avalanche Rugged TechnologyID = -2.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching CharacteristicsTO-220F Unrivalled Gate Charge: 6.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 2.06 (Typ.) 1231. Gate 2. Drain 3.

DATA SHEETSILICON TRANSISTORKN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING (Unit: mm) Compact package 0.3 +0.10+0.1 Resistors built-in type 0.15 0.05 Complementary to KA4xxx 30 to 0.1ORDERING INFORMATION 21PART NUMBER PACKAGE 0.2+0.10KN4xxx SC-75 (USM)0.60.5 0.50.75 0.051.0ABSOLUTE MAXIMUM RATINGS (TA = 25

PMF370XNN-channel TrenchMOS extremely low level FET5 July 2019 Product data sheet1. General descriptionExtremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product is designed and qualified for use incomputing, communications, consumer and industrial applications only.2. Features and benefits Low con

BLF369Multi-use VHF power LDMOS transistorRev. 04 19 February 2009 Product data sheet1. Product profile1.1 General descriptionA general purpose 500 W LDMOS RF power transistor for pulsed and continuous waveapplications in the HF/VHF band up to 500 MHz.Table 1. Typical performanceTypical RF performance at VDS = 32 V and Th =25 C in a common-source 225 MHz test circuit.[1]

2SCR562F3DatasheetNPN 6.0A 30V Middle Power TransistorlOutlinel DFN2020-3SParameter ValueVCEO30VIC6AHUML2020L3lFeatures lInner circuitl l1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=220mV(Max.).(IC/IB=3A/150mA)3) High collector current.IC=6A(max),ICP=7A(max)4) Leadless small SMD package (HUML2020L3)Excellent thermal and electrical conduct

Power management (dual transistors) EMF32 / UMF32N DTA143T and 2SK3019 are housed independently in a EMT6 package. Application Dimensions (Unit : mm) Power management circuit (4) (3)(5) (2)Features (6) (1)1.21.61) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 Each lead hassame dimensionsStructure

EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 Applications Dimensions (Unit : mm) Power management circuit EMT61.60.51.00.5 0.5 Features (6) (5) (4)1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package. 1pin mark (3)(1) (2)0.22 0.132) Power switching circuit in a single package. 3) Moun

2SAR542F3DatasheetPNP -3.0A -30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO-30VIC-3A2SAR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=-0.20V(Max.).(IC/IB=-1A/-50mA)3) High collector current.IC=-3A(max),

2SAR562F3Datasheet PNP -6A -30V Middle Power TransistorlOutlineHUML2020L3Parameter ValueCollector VCEO-30VCollector Base IC-6AEmitter Emitter Base lFeatures2SAR562F3 1) Suitable for Middle Power Driver2) Low VCE(sat) VCE(sat)= -300mV(Max.) (IC/IB= -3A/ -60mA)3) High collector current IC = -6A (max) , ICP = -7A (max)4) Leadless small SMD package "HU

2SCR542F3DatasheetNPN 3.0A 30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO30VIC3A2SCR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=0.20V(Max.).(IC/IB=1A/50mA)3) High collector current.IC=3A(max),ICP=6A(m

IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin

IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin

IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

IRFBF30, SiHFBF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANTQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R

SiHF30N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.125 Reduced Switching and Conduction LossesQg max. (nC) 130 Ultra Low Gate Charge (Qg)Qgs (nC) 15 Avalanche Energy Rated (UIS)Qgd (nC) 39

IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian

IRFPF30, SiHFPF30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.7RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 78 Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian

IRFBF30S, SiHFBF30SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 900DefinitionRDS(on) ()VGS = 10 V 3.7 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 10 Fast SwitchingQgd (nC) 42 Ease of Paralleling Simple Drive RequirementsConfiguration Single Compliant to R

ZXMN3F31DN830V SO8 dual N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.024 @ VGS= 10V 7.30.039 @ VGS= 4.5V 5.7DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD1 D2 Low on-resistance 4.5V gate drive capabilityG1 G2Applications DC-DC ConvertersS1 S2 Po

A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary ID Device V(BR)DSS QG RDS(on) TA= 25C 33m @ VGS= 10V 5.0A N-CH 30V 9.0nC60m @ VGS= 4.5V 3.9A 55m @ VGS= -10V -4.1A P-CH -30V 12.7nC80m @ VGS= -4.5V -3.3A P1S/P2S Description This new generation complementary MOSFET H-Bridge features lo

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.012 @ VGS=-10V -17.10.018 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application

ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary V(BR)DSS QG Device RDS(on) () ID (A) (V) (nC) 0.024 @ VGS= 10V 7.3 Q1 30 12.9 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 Q2 -30 12.70.080 @ VGS= -4.5V 4 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain su

ZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC

ZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Converters Power m

ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low

ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.020 @ VGS=-10V -12.60.028 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance SO8 package Applications B

ZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC-

Technische Information / Technical InformationIGBT-ModuleFF300R12KT4IGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT4 und und optimierter Emitter Controlled Diode 62mm C-series module with fast trench/fieldstop IGBT4 and optimized Emitter Controlled Diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rate

Technische Information / Technical InformationIGBT-ModulFF300R12KS4PIGBT-Module62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten und bereits aufgetragenemThermal Interface Material62mm C-Series module with the fast IGBT2 for high-frequency switching and pre-applied Thermal InterfaceMaterialVorlufige Daten / Preliminary DataV = 1200VCESI = 300A / I = 60

Technische Information / Technical InformationIGBT-ModuleF3L30R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikatione

PD - 95495IRF3709PbFSMPS MOSFETIRF3709SPbFIRF3709LPBFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max ID for Telecom and Industrial Use 30V 9.0m 90Al High Frequency Buck Converters forServer Processor Power Synchronous FETl Optimized for Synchronous Buck Converters Including Capacitive

F3L300R12MT4P_B23EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-

/ Technical InformationIGBT-F3L200R07PE4IGBT-modulesEconoPACK4 / IGBT4 and 4 diode andNTCEconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / Preliminary Data

Technical InformationModSTACK6MS2400R17KE3-3F-B16B9C23VTIOVorlufige Datenpreliminary dataKey data3x 629A rms at 690V rms, forced air (fan included)General informationStacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers andsensors included. These are only technical data!Please read carefully the complete documentation and maintain the

Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B27IGBT-ModuleV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features High Speed IGBT H3 High speed IGBT H3 Niederinduktives

Technische Information / Technical InformationIGBT-ModulFF300R17ME4_B11IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typica

AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed

Technische Information / Technical InformationIGBT-ModuleF3L400R07PE4_B26IGBT-modulesEconoPACK4 Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEconoPACK4 module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 650VCESI = 400A / I = 800AC nom CRMTypische Anwendungen Typical Applications

F3L300R12MT4P_B22EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-

Technische Information / Technical InformationIGBT-ModuleF3L15R12W2H3_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

Technische Information / Technical InformationIGBT-ModulFF300R12KT3P_EIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200V

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S

Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic

Technische Information / Technical InformationIGBT-ModulF3L75R12W1H3_B11IGBT-ModuleVorlufige Daten / Preliminary DataV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

Technische Information / Technical InformationIGBT-ModuleFF300R12MS4IGBT-modulesEconoDUAL3 Modul mit schnellem IGBT2 fr hochfrequentes Schalten EconoDUAL3 module with fast IGBT2 for high switching frequency Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200

Technische Information / Technical InformationIGBT-ModulFF300R07ME4_B11IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Hybrid-Nutzfahrzeuge Commercial Agric

FF300R12ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTC /TIMEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC /TIMV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives

Technische Information / Technical InformationIGBT-ModulFF300R12KT4PIGBT-Module62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary Dat

Technische Information / Technical InformationIGBT-ModuleFF300R06KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 600 Vvj CESColle

Technische Information / Technical InformationIGBT-ModulF3L300R12ME4_B23IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-L

PD - 95363IRF3708PbFSMPS MOSFET IRF3708SPbFIRF3708LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC Isolated Converterswith Synchronous Rectification for TelecomVDSS RDS(on) max IDand Industrial Use 30V 12m 62Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at 4.5V VGSl Ful

/ Technical InformationIGBT-F3L300R12ME4_B23IGBT-modulesEconoDUAL3 /IGBT4HE NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications

Technische Information / Technical InformationIGBT-ModuleFF300R12ME4_B11IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendunge

PD -95618AIRF3007PbFTypical ApplicationsHEXFET Power MOSFETl Industrial Motor DriveDFeaturesVDSS = 75Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 0.0126l Fast SwitchingGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescription This design of HEXFET Power MOSFETs utilizes thelastest processing techniques to achieve

PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power

F3L400R10W3S7F_B11EasyPACK Modul mit TRENCHSTOP IGBT7 und CoolSiC Schottky Diode und PressFIT / NTCEasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and PressFIT / NTCV = 950VCESI = 400A / I = 800AC nom CRMPotentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applications

Technische Information / Technical InformationIGBT-ModuleF3L300R12ME4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

IFF300B12ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTC /StrommesswiderstandEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC /current sense shuntV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter H

/ Technical InformationIGBT-DF300R07PE4_B6IGBT-modulesEconoPACK4 /IGBT4 NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRM Typical Applications

Technische Information / Technical InformationIGBT-ModuleFF300R07KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled DiodeVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichte

FF300R17ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTC / TIMEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and PressFIT / NTC / TIMV = 1700VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives USV-S

Technische Information / Technical InformationIGBT-ModuleF3L25R12W1T4_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 25A / I = 50AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

Technische Information / Technical InformationIGBT-ModuleFF300R12KE4_EIGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications

/ Technical InformationIGBT-F3L100R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC / Preliminary Data V = 1200VCESI = 50A

Technische Information / Technical InformationIGBT-ModuleFF300R17ME3IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoDUAL3 module with trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspan

Technische Information / Technical InformationIGBT-ModuleF3L50R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikation

Technische Information / Technical InformationIGBT-ModuleF3L75R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical

PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

PD - 94653BIRF3205ZAUTOMOTIVE MOSFETIRF3205ZSIRF3205ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOS

PD - 94954DIRF3710PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23mGl Fast Switchingl Fully Avalanche RatedID = 57Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extre

PD - 95494AIRF3007SPbFIRF3007LPbFTypical Applicationsl Industrial Motor Drive HEXFET Power MOSFETFeatures DVDSS = 75Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.0126Gl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 62ASDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing technique

PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

PD - 95106IRF3205SPbFIRF3205LPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptinAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques t

PD - 94971IRF3703PbFSMPS MOSFETHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 2.8m 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-220ABAbsoIute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V

Technische Information / Technical InformationIGBT-ModuleFF300R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT

F3L400R12PT4P_B26EconoPACK4 Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / bereits aufgetragenemThermal Interface MaterialEconoPACK4 module with active "Neutral Point Clamp 2" topology and PressFIT / pre-applied ThermalInterface MaterialVorlufige Daten / Preliminary Data V = 1200VCESI = 400A / I = 800AC nom CRMTypische Anwendungen Typical Applic

/ Technical InformationIGBT-FF300R17KE4IGBT-modules62mm C-Series / IGBT4 and diode62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled Diode / Preliminary DataV = 1700VCESI = 300A / I = 600A

Technische Information / Technical InformationIGBT-ModuleF3L50R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikation

/ Technical InformationIGBT-F3L150R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRM

/ Technical InformationIGBT-F3L300R12ME4_B22IGBT-modulesEconoDUAL3 /IGBT4HE NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications

Technische Information / Technical InformationIGBT-ModuleFF300R12ME4IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor Drives

Technische Information / Technical InformationIGBT-ModuleFF300R12ME3IGBT-modulesEconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sp

IFF300B12N2E4P_B11MIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / bereitsaufgetragenem Thermal Interface MaterialMIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and PressFIT / pre-appliedThermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Moto

/ Technical InformationIGBT-FF300R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten 62mm C-series module with the fast IGBT2 for high-frequency switching IGBT, / IGBT,Inverter / Maximum Rated ValuesT = 25C V 1200 Vvj CESCollector-emitter voltage

PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE

Technische Information / Technical InformationIGBT-ModuleFF300R12KE4_B2IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4, Emitter Controlled Diode und M5 Lastanschlsse 62mm C-series module with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power terminals Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum R

Technische Information / Technical InformationIGBT-ModuleFF300R12KT3_EIGBT-modules62mm C-Serien Modul mit gemeinsamen Emitter 62mm C-series module with common emitter Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor

/ Technical InformationIGBT-F3L80R12W1H3_B11IGBT-modulesEasyPACK 2 and PressFIT / NTCEasyPACK module with active Neutral Point Clamp 2 topology and PressFIT / NTC / Preliminary DataV = 1200VCESI = 80A

Technische Information / Technical InformationIGBT-ModuleFF300R17KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannu

Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

/ Technical InformationIGBT-F3L400R07ME4_B22IGBT-modulesEconoDUAL3 / IGBT4 and diode andNTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 650VCESI = 400A / I = 80

IRF300P226 MOSFET StrongIRFET V 300V D DSS RDS(on) typ. 16m Gmax 19m Applications SI 100A D UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

/ Technical InformationIGBT-F3L75R12W1H3_B27IGBT-ModuleV = 1200VCESI = 75A / I = 150AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low Inductive Design Low Switching Losses V

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

Technische Information / technical informationIGBT-ModuleDF300R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage300 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 480 APeriodischer Kollektor Spitzenst

Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic

/ Technical InformationIGBT-F3L200R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 100A / I = 200AC nom CRM

/ Technical InformationIGBT-FF300R07ME4_B11IGBT-ModuleEconoDUAL3 / IGBT4 and diode andNTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 650VCESI = 300A / I = 600AC

Technische Information / Technical InformationIGBT-ModuleF3L300R07PE4IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTCEconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTCVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic

FF300R17ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC / pre-appliedThermal Interface MaterialV = 1700VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Moto

PD - 97677AUTOMOTIVE GRADEAUIRF3004WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS40Vl Ultra Low On-ResistanceRDS(on) typ.1.27ml 50% Lower Lead Resistancemax. 1.40ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)386A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free, RoHS

FF300R12KE4P62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter H

PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achievee

F3L300R07PE4PEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / bereitsaufgetragenem Thermal Interface MaterialEconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT /pre-applied Thermal Interface MaterialVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwe

IRF3610SPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11.6ml Hard Switched and High Frequency Circuits IDS 103ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

Technische Information / Technical InformationIGBT-ModuleFF300R17KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled DiodeVorlufige Daten / Preliminary DataV = 1700VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumricht

Technische Information / Technical InformationIGBT-ModuleF3L75R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical

AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

PD - 94201BIRF3710SIRF3710LHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely

F3L15MR12W2M1_B69EasyPACK Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 75A / I = 150AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler

PD - 97741AUTOMOTIVE GRADEAUIRF3205FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceV(BR)DSS55Vl Dynamic dV/dT RatingRDS(on) max.8.0ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)110Al Fully Avalanche RatedSID (Package Limited)75Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Complian

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

Technische Information / Technical InformationIGBT-ModulFF300R17ME4IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Motora

AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.6m Ultra Low On-Resistance max. 3.3m 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotiv

Technische Information / Technical InformationIGBT-ModulIFF300B17N2E4P_B11IGBT-ModuleMIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / bereitsaufgetragenem Thermal Interface MaterialMIPAQbase module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / pre appliedThermal Interface MaterialVorlufige Daten / Preliminar

PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5

Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B23IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

/ Technical InformationIGBT-F3L15R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Lo

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

IRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestprocessing techni

Technische Information / Technical InformationIGBT-ModuleFF300R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollekto

Technische Information / Technical InformationIGBT-ModuleF3L300R12PT4_B26IGBT-modulesEconoPACK4 Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEconoPACK4 module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications

FF300R17KE4P62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and pre-applied ThermalInterface MaterialV = 1700VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High po

Technische Information / Technical InformationIGBT-ModulF3L150R12W2H3_B11IGBT-ModuleEasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications

/ Technical InformationIGBT-F3L400R07ME4_B23IGBT-modulesEconoDUAL3 / IGBT4 and diode andNTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 650VCESI = 400A / I = 80

/ Technical InformationIGBT-FF300R06KE3_B2IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3, Emitter Controlled3 Diode und M5 Lastanschlssen 62mm C-Serien module with trench/fieldstop IGBT3, Emitter Controlled3 diode and M5 power terminals IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values

Technische Information / Technical InformationIGBT-ModuleF3L400R12PT4_B26IGBT-modulesEconoPACK4 Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEconoPACK4 module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 1200VCESI = 400A / I = 800AC nom CRMTypische Anwendungen Typical Applications

Technische Information / Technical InformationIGBT-ModulF3L100R12W2H3_B11IGBT-ModuleEasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 1200VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-

Technische Information / Technical InformationIGBT-ModuleFF300R06KE3_B2IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3, Emitter Controlled3 Diode und M5 Lastanschlssen 62mm C-Serien module with trench/fieldstop IGBT3, Emitter Controlled3 diode and M5 power terminals Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

/ Technical InformationIGBT-FF450R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values

VCES = 3000VHigh Voltage IGBT IXGF36N300IC25 = 36AFor Capacitor DischargeApplicationsVCE(sat) 2.7V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 V12Isolated TabVGES Continuous 20 V5VGEM Transient 30 V1 = Gate 5 = CollectorIC25 TC = 25C 36 A2 = EmitterIC110 TC =

Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C

High Voltage IGBT VCES = 4000VIXGF30N400For Capacitor DischargeIC25 = 30AApplicationsVCE(sat) 3.1V( Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 4000 VVGES Continuous 20 V12Isolated TabVGEM Transient 30 V5IC25 TC = 25C 30 A1 = Gate 5 = CollectorIC110 TC = 110C 15 A

VCES = 1700VHigh Voltage IGBT IXGF32N170IC110 = 19AVCE(sat) 3.5V( Electrically Isolated Tab)tfi(typ) = 250nsISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 V12VGES Continuous 20 V5VGEM Transient 30 VISOLATED TABIC25 TC = 25C 44 AIC110 TC = 110C 19 AICM TC = 25C, 1ms 200 A1 = Gate 5 = Col

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF32N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie

Advance Technical InformationHigh Voltage XPTTM IGBTVCES = 4500VIXYF30N450IC110 = 17AVCE(sat) 3.9V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VVCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 23 A1

RF3356Features High Power Gain Low Noise Figure High Cut-off FrequencyNPN RF Wideband Amplifiers and Oscillators.RF Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Informa

MUN2132, MMUN2132L,MUN5132, DTA143EE,DTA143EM3, NSBA143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

NSVF3007SG3 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 30 mA Features fT = 8 GHz ty

MUN2216, MMUN2216L,MUN5216, DTC143TE,DTC143TM3, NSBC143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MUN2240, MMUN2240L,MUN5240, DTC144TE,DTC144TM3, NSBC144TF3Digital Transistors (BRT)R1 = 47 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

NTF3055L108,NVF3055L108Power MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223Designed for low voltage, high speed switching applications in powerhttp://onsemi.comsupplies, converters and power motor controls and bridge circuits.3.0 A, 60 VFeaturesRDS(on) = 120 mW NVF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

MUN2213, MMUN2213L,MUN5213, DTC144EE,DTC144EM3, NSBC144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

MUN2134, MMUN2134L,MUN5134, DTA124XE,DTA124XM3, NSBA124XF3Digital Transistors (BRT)R1 = 22 kW, R2 = 47 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

Field Stop Trench IGBT, 30 A, 650 VFGAF30S65AQUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation of RC IGBTs offer the optimumperformance for PFC applications and welder where low conductionwww.onsemi.comand switching losses are essential.Features30 A, 650 V Maximum Junction Temperature: TJ = 175CVCE(sat) = 1.4 V (Typ.)

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

NST846BF3T5GNPN General PurposeTransistorThe NST846BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures

MMDF3N02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices ar

NSBA114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

NTF3055-100,NVF3055-100Power MOSFET3.0 Amps, 60 VoltsN-Channel SOT-223http://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge3.0 A, 60 Vcircuits.RDS(on) = 110 mWFeaturesN-Channel AEC-Q101 Qualified and PPAP Capable - NVF3055-100D These Devices are Pb-Free and are RoHS Compli

MMDF3N02HDPower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

NST3906F3T5GPNP General PurposeTransistorThe NST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo

NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3

December 2013FDPF3860T N-Channel PowerTrench MOSFET100 V, 20 A, 38.2 mFeatures Description RDS(on) = 29.1 m (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main-taining superior switching performance

MJF31C (NPN),MJF32C (PNP)Preferred Device Complementary SiliconPlastic Power Transistorsfor Isolated Packagehttp://onsemi.comApplicationsDesigned for use in general purpose amplifier and switching 3.0 AMPEREapplications.POWER TRANSISTORSCOMPLEMENTARY SILICONFeatures100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage -VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MUN2132, MMUN2132L,MUN5132, DTA143EE,DTA143EM3, NSBA143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

MMSF3P02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices are desi

NSBA114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

NSBA114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

MUN2241, MMUN2241L,MUN5241, DTC115TE,DTC115TM3, NSBC115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223Designed for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.3.0 A, 60 VFeaturesRDS(on) = 120 mW Pb-Free Packages are AvailableApplicationsN-ChannelD Power Supplies Converters Pow

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJF31C (NPN),MJF32C (PNP)Preferred Device Complementary SiliconPlastic Power Transistorsfor Isolated Packagehttp://onsemi.comApplicationsDesigned for use in general purpose amplifier and switching 3.0 AMPEREapplications.POWER TRANSISTORSCOMPLEMENTARY SILICONFeatures100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage -VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3

MUN2141, MMUN2141L,MUN5141, DTA115TE,DTA115TM3, NSBA115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

NTF3055-100,NVF3055-100MOSFET Power,N-Channel, SOT-2233.0 A, 60 Vwww.onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge3.0 A, 60 Vcircuits.RDS(on) = 110 mWFeatures NVF Prefix for Automotive and Other Applications RequiringN-ChannelUnique Site and Control Change Requirements; AE

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MUN2135, MMUN2135L,MUN5135, DTA123JE,DTA123JM3, NSBA123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

MUN2133, MMUN2133L,MUN5133, DTA143ZE,DTA143ZM3, NSBA143ZF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 47 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJF31C (NPN),MJF32C (PNP)Preferred Device Complementary SiliconPlastic Power Transistorsfor Isolated Packagehttp://onsemi.comApplicationsDesigned for use in general purpose amplifier and switching 3.0 AMPEREapplications.POWER TRANSISTORSCOMPLEMENTARY SILICONFeatures100 VOLTS, 28 WATTS Collector-Emitter Saturation Voltage -VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

DATA SHEETwww.onsemi.comNPN General PurposeCOLLECTOR3Transistor1NST3904F3T5GBASEThe NST3904F3T5G device is a spin-off of our popular2SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isEMITTERdesigned for general purpose amplifier applications and is housed inthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where

MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90

MUN2137, MMUN2137L,MUN5137, DTA144WE,DTA144WM3, NSBA144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

NTF3055L175Preferred DevicePower MOSFET2.0 A, 60 V, Logic LevelN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.2.0 AMPERES, 60 VOLTSRDS(on) = 175 mWFeatures Pb-Free Packages are AvailableN-ChannelDApplications Power Supplies Converters

BF393High Voltage TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2BASECollector -Emitter Voltage VCEO 300 VdcCollector -Base Voltage VCBO 300 Vdc1Emitter -Base Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 500 mAdcTotal Device Dissipation @ TA = 25C PD 625 mW

MUN2116, MMUN2116L,MUN5116, DTA143TE,DTA143TM3, NSBA143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MUN2234, MMUN2234L,MUN5234, DTC124XE,DTC124XM3, NSBC124XF3Digital Transistors (BRT) R1 = 22 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

NST848BF3T5GNPN General PurposeTransistorThe NST848BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures

MMSF3P02HDPower MOSFET3 Amps, 20 VoltsP-Channel SO-8These miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in low v

MMDF3N04HDPreferred DevicePower MOSFET3 Amps, 40 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding highenergy in the avalanche and commutation modes and the drain-to-sourcehttp://onsemi.comdiode has a very low reverse recovery time. MiniMOSt devices aredesigned for use in

MUN2230, MMUN2230L,MUN5230, DTC113EE,DTC113EM3, NSBC113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias ResistorR1BASETransistor (BRT)

MUN2211, MMUN2211L,MUN5211, DTC114EE,DTC114EM3, NSBC114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

NTLGF3501NPower MOSFET andSchottky Diode20 V, 4.6 A FETKY), N-Channel, 2.0 A Schottky Barrier Diode, DFN6http://onsemi.comFeaturesMOSFET Flat Lead 6 Terminal Package 3x3x1 mmV(BR)DSS RDS(on) TYP ID TYP Reduced Gate Charge to Improve Switching Response Enhanced Thermal Characteristics20 V 70 mW @ 4.5 V 4.6 A This is a Pb-Free DeviceSCHOTTKY DIODEApplicat

MUN2140, MMUN2140L,MUN5140, DTA114TE,DTA144TM3, NSBA144TF3Digital Transistors (BRT)R1 = 47 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

NTLJF3117PPower MOSFET andSchottky Diode-20 V, -4.1 A, P-Channel, with 2.0 ASchottky Barrier Diode, 2x2 mm,mCool] Packagehttp://onsemi.comFeaturesMOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for ExcellentV(BR)DSS RDS(on) MAX ID MAX (Note 1)Thermal Conduction100 mW @ -4.5 V 2x2 mm Footprint Same

NST856BF3T5GPNP General PurposeTransistorThe NST856BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

MUN2137, MMUN2137L,MUN5137, DTA144WE,DTA144WM3, NSBA144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

MUN2215, MMUN2215L,MUN5215, DTC114TE,DTC114TM3, NSBC114TF3Digital Transistors (BRT)R1 = 10 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MUN2237, MMUN2237L,MUN5237, DTC144WE,DTC144WM3, NSBC144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

NTF3055L108,NVF3055L108Power MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223http://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge3.0 A, 60 Vcircuits.RDS(on) = 120 mWFeatures AEC Q101 Qualified - NVF3055L108N-Channel These Devices are Pb-Free and are RoHS CompliantDAppli

NTF3055-100Preferred DevicePower MOSFET3.0 Amps, 60 VoltsN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.3.0 A, 60 VFeatures RDS(on) = 110 mW Pb-Free Packages are AvailableN-ChannelDApplications Power Supplies ConvertersG Power Mo

MOSFET Power,N-Channel, SUPERFET) III800 V, 360 mW, 13 ANTPF360N80S3ZDescriptionwww.onsemi.com800 V SUPERFET III MOSFET is ON Semiconductors highperformance MOSFET family offering 800 V breakdown voltage.New 800 V SUPERFET III MOSFET which is optimized forV(BR)DSS RDS(ON) MAX ID MAXprimary switch of flyback converter, enables lower switching lossesand case temperatu

MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

July 2013FCPF380N60_F152N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mFeatures Description 650 V @TJ = 150C SuperFETII MOSFET is Fairchild Semiconductors first gener-ation of high voltage super-junction (SJ) MOSFET family that is Max. RDS(on) = 380 mutilizing charge balance technology for outstanding low on-resis- Ultra low gate charge (typ. Qg = 30

NTLJF3118NPower MOSFET andSchottky Diode20 V, 4.6 A, mCool] N-Channel, with2.0 A Schottky Barrier Diode, 2x2 mmhttp://onsemi.comWDFN PackageMOSFETFeaturesV(BR)DSS RDS(on) Max ID Max WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction65 mW @ 4.5 V 3.8 A Footprint Same as SC-88 Package20 V 85 mW @ 2.5 V 2.0 A 1.8 V VGS Rated RDS(o

NTF3055L108,NVF3055L108Power MOSFET3.0 A, 60 V, Logic Level, N-ChannelSOT-223Designed for low voltage, high speed switching applications in powerwww.onsemi.comsupplies, converters and power motor controls and bridge circuits.3.0 A, 60 VFeaturesRDS(on) = 120 mW NVF Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1

NST848BF3T5GNPN General PurposeTransistorThe NST848BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123http://onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures

NTF3055-160Preferred DevicePower MOSFET2.0 Amps, 60 VoltsNChannel SOT223Designed for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.2.0 AMPERESApplications60 VOLTS Power Supplies Converters RDS(on) = 160 mW Power Motor ControlsNChannel Bridge CircuitsD

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

NST3904F3T5GNPN General PurposeTransistorThe NST3904F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3

NTLJF3117PPower MOSFET andSchottky Diode-20 V, -4.1 A, P-Channel, with 2.0 ASchottky Barrier Diode, 2x2 mm,mCool] Packagehttp://onsemi.comFeaturesMOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for ExcellentV(BR)DSS RDS(on) MAX ID MAX (Note 1)Thermal Conduction100 mW @ -4.5 V 2x2 mm Footprint Same

MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

NTLGF3402PPower MOSFET andSchottky Diode-20 V, -3.9 A FETKY), P-Channel, 2.0 A Schottky Barrier Diode, DFN6http://onsemi.comFeaturesMOSFET Flat Lead 6 Terminal Package 3x3x1 mmV(BR)DSS RDS(on) TYP ID MAX Enhanced Thermal Characteristics Low VF and Low Leakage Schottky Diode-20 V 110 mW @ -4.5 V -3.9 A Reduced Gate Charge to Improve Switching ResponseSCHOT

MUN2214, MMUN2214L,MUN5214, DTC114YE,DTC114YM3, NSBC114YF3Digital Transistors (BRT)R1 = 10 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

NTF3055L175Power MOSFET2.0 A, 60 V, Logic LevelN-Channel SOT-223Designed for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.2.0 AMPERES, 60 VOLTSRDS(on) = 175 mWFeatures This is a Pb-Free DeviceN-ChannelDApplications Power Supplies Converters Power Motor Contro

FCPF360N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 10 A, 360 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(

MUN2238, MMUN2238L,MUN5238, DTC123TE,DTC123TM3, NSBC123TF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MUN2138, MMUN2138L,MUN5138, DTA123TE,DTA123TM3, NSBA123TF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

NST856BF3T5GPNP General PurposeTransistorThe NST856BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

MUN2232, MMUN2232L,MUN5232, DTC143EE,DTC143EM3, NSBC143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MUN2233, MMUN2233L,MUN5233, DTC143ZE,DTC143ZM3, NSBC143ZF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BR

NST846BF3T5GNPN General PurposeTransistorThe NST846BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-1123www.onsemi.comsurface mount package. This device is ideal for low-power surfacemount applications where board space is at a premium.COLLECTORFeatures 3

NSBA114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

NSBC114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The digital transistorcontains a single transistor with a monolithic bias network consistingof two resistors;

MTSF3N03HDPreferred DevicePower MOSFET3 Amps, 30 VoltsNChannel Micro8tThese Power MOSFET devices are capable of withstanding highenergy in the avalanche and commutation modes and the draintosourcehttp://onsemi.comdiode has a very low reverse recovery time. Micro8 devices are designedfor use in low voltage, high speed switching applications where powerefficiency is i

UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MT Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at po

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UNISONIC TECHNOLOGIES CO., LTD UF840K-MTQ Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1TO-220 TO-220F DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 11time, low gate charge, low on-state resistance and high rugged TO-252avalanche. This high speed switching power MOSFET is usually TO-220

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

UNISONIC TECHNOLOGIES CO., LTD 6N70K-MT Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70K-MT is an N-channel mode power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70K-MT is universally applied in high efficiency switch m

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s

UNISONIC TECHNOLOGIES CO., LTD 24NM60 Power MOSFET 24A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM60 is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters fo

UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode cond

UNISONIC TECHNOLOGIES CO., LTD 7N65-TC Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using 1UTCs advanced technology to provide customers with planar stripe 1and DMOS technology. This technology allows a minimum on-state TO-220F3TO-220F1resistance and superior switching performance.

UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati