F4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGF40T120F Lead Free Package and Finish General Description Using advanced IGBT technology, the IGBT offers VCES VCE(sat) IC superior conduction and switching performances,high 1200V 1.9V 40A avalanche ruggedness. Features: Low saturation voltage and Quick switching saturation voltage is positive temperature relation and is easy to be used in parallel High

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StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

Telefunken Transistor BF469S DatasheetSilicon NPN TransistorBF469S250V / 30mADATASHEETOEM TelefunkenSource: Telefunken Databook 1989Datasheet Rev. 1.3 12/18 data without warranty / liabilityTelefunken Transistor BF469S DatasheetDatasheet Rev. 1.3 12/18 data without warranty / liabilityTelefunken Transistor BF469S DatasheetDatasheet Rev. 1.3 12/18

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

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Telefunken Transistor BF470S DatasheetSilicon NPN TransistorBF470S250V / 30mADATASHEETOEM TelefunkenSource: Telefunken Databook 1989Datasheet Rev. 1.3 12/18 data without warranty / liabilityTelefunken Transistor BF470S DatasheetDatasheet Rev. 1.3 12/18 data without warranty / liabilityTelefunken Transistor BF470S DatasheetDatasheet Rev. 1.3 12/18

PPJF4NA65A 650V N-Channel MOSFET Voltage 650 V Current 4 A Features R , VDS(ON) GS@10V,ID@2A

October 2001 IGBTSGF40N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UF High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 20AUF series is designed for the applications such as motor High Input Impedancecontrol and general inverters where Hig

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF493S/DHigh Voltage TransistorBF493SPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF421/DHigh Voltage TransistorsBF421PNP SiliconBF423COLLECTOR23BASE1EMITTER123MAXIMUM RATINGSRating Symbol BF421 BF423 UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 300 250 VdcCollectorBase Voltage VCBO 300 250 VdcEmitterBase Voltage VEBO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF4416LT1/DJFETMMBF4416LT1VHF/UHF Amplifier TransistorNChannelMotorola Preferred Device2 SOURCE3GATE31 DRAIN1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 10DrainSource Voltage VDS 30 VdcSOT23 (TO236AB)DrainGate Voltage VDG 30 VdcGateSource Voltage VGS 30 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPF4392/DJFETs Switching1 DRAINNChannel DepletionMPF4392MPF43933GATEMotorola Preferred Devices2 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 30 Vdc1DrainGate Voltage VDG 30 Vdc 23GateSource Voltage VGS 30 VdcCASE 2904, STYLE 5Forward Gate Current IG(f) 5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF464/DThe RF LineNPN SiliconMRF464RF Power Transistor. . . designed primarily for applications as a highpower linear amplifier from 2.0to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 80 W (PEP)80 W (PEP), 30 MHzMinimum G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF493RS/DHigh Voltage TransistorsPNP SiliconPBF493RSCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Cu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427R2RF Low Power TransistorDesigned for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surface

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427RF Low Power Transistor. . . designed for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF464/DThe RF LineNPN SiliconMRF464RF Power Transistor. . . designed primarily for applications as a highpower linear amplifier from 2.0to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 80 W (PEP)80 W (PEP), 30 MHzMinimum G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427R2RF Low Power TransistorDesigned for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surface

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427RF Low Power Transistor. . . designed for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF493/DHigh Voltage TransistorsPNP Silicon PBF493PBF493SCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF4P01HD/DDesigner's Data SheetMMSF4P01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsSINGLE TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 4.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 12 VOLTSThese

Order this documentMOTOROLAby MJF47/DSEMICONDUCTOR TECHNICAL DATAMJF47High Voltage Power TransistorNPN SILICONIsolated Package ApplicationsPOWER TRANSISTORDesigned for line operated audio output amplifiers, switching power supply drivers 1 AMPEREand other switching applications, where the mounting surface of the device is required 250 VOLTSto be electrically isolated from

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF4N01HD/DDesigner's Data SheetMMDF4N01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 4.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF4P03HD/DAdvance InformationMMDF4P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS devices are an advanced series of powerPOWER MOSFETMOSFETs which utilize Motorolas High Cell Density TMOS30 VOLTSprocess. Dual HDTMOS devices

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF4N01HD/DDesigner's Data SheetMMSF4N01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsTMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.8 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTSThese mi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF4N01HD/DDesigner's Data SheetMMDF4N01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 4.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF4N01Z/DProduct PreviewMMDF4N01ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which 4.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain 20 VOL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF455/DThe RF LineNPN SiliconMRF455RF Power Transistor. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts60 W, 30 MHzMinimum Gain = 13 dBRF POWEREfficiency = 55%TRANSISTOR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF4N01HD/DDesigner's Data SheetMMSF4N01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsTMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs 5.8 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTSThese mi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF4C03HD/DAdvance InformationMMDF4C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYMiniMOS devices are an advanced series of power MOSFETs DUAL TMOS POWER FETwhich utilize Motorolas High Cell Density HDTMOS process. 30 VOLTSThese miniatu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF492/DThe RF LineNPN SiliconMRF492RF Power TransistorDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 W70 W, 50 MHzMinimum Gain = 11 dBRF POWEREfficiency = 50%TRANSI

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF4P03HD/DAdvance InformationMMDF4P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS devices are an advanced series of powerPOWER MOSFETMOSFETs which utilize Motorolas High Cell Density TMOS30 VOLTSprocess. Dual HDTMOS devices

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF420/DHigh Voltage TransistorsNPN SiliconBF420COLLECTOR2BF4223BASE1EMITTERMAXIMUM RATINGSRating Symbol BF420 BF422 UnitCollectorEmitter Voltage VCEO 300 250 Vdc 123CollectorBase Voltage VCBO 300 250 VdcEmitterBase Voltage VEBO 5.0 VdcCASE 2904, STYLE 14TO92 (TO226AA)Collect

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF4C03HD/DAdvance InformationMMDF4C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYMiniMOS devices are an advanced series of power MOSFETs DUAL TMOS POWER FETwhich utilize Motorolas High Cell Density HDTMOS process. 30 VOLTSThese miniatu

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF4391LT1/DMMBF4391LT1JFET Switching TransistorsMMBF4392LT1NChannel2 SOURCEMMBF4393LT13GATE31 DRAIN1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDS 30 VdcCASE 31808, STYLE 10DrainGate Voltage VDG 30 VdcSOT23 (TO236AB)GateSource Voltage VGS 30 VdcForward

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF455/DThe RF LineNPN SiliconMRF455RF Power Transistor. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts60 W, 30 MHzMinimum Gain = 13 dBRF POWEREfficiency = 55%TRANSISTOR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF4P01HD/DDesigner's Data SheetMMSF4P01HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorsSINGLE TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs 4.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 12 VOLTSThese

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BF493S/DHigh Voltage TransistorBF493SPNP SiliconCOLLECTOR32BASE112EMITTER3MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Voltage VEBO 6.0 VdcCollector Current

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF4P01Z/DAdvance InformationMMSF4P01ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-Channel withMonolithic Zener ESDSINGLE TMOSProtected GatePOWER MOSFETEZFETs are an advanced series of power MOSFETs which utilize 4.0 AMPERESMotorolas High Cell Density TMOS process and cont

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo

PD - 94639AIRF4104AUTOMOTIVE MOSFETIRF4104SIRF4104LFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET

StrongIRFET IRF40B207 HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 3.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 4.5m Resonant mode power supplies S OR-ing and redund

PD - 90336FIRF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762HEXFETTRANSISTORS JANTXV2N6762THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF430 500V 1.5 4.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

PD- 94243IRF4435HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon ar

PD - 94888IRFPF40PbF Lead-Free12/11/03Document Number: 91250 www.vishay.com1IRFPF40PbFDocument Number: 91250 www.vishay.com2IRFPF40PbFDocument Number: 91250 www.vishay.com3IRFPF40PbFDocument Number: 91250 www.vishay.com4IRFPF40PbFDocument Number: 91250 www.vishay.com5IRFPF40PbFDocument Number: 91250 www.vishay.com6IRFPF40PbFTO-247AC Package O

PD - 9.770AIRGPF40FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 900V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequencycurve VCE(sat) 3.3VG@VGE = 15V, IC = 17AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectif

PD - 90330FREPETITIVE AVALANCHE AND dv/dt RATED IRF450HEXFETTRANSISTORS JANTX2N6770THRU-HOLE (TO-204AA/AE) JANTXV2N6770500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF450 500V 0.400 12AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestS

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

PD - 90372AREPETITIVE AVALANCHE AND dv/dt RATED IRF440500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF440 500V 0.85 8.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

PD - 9.1280CIRF4905HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

PD - 90581REPETITIVE AVALANCHE AND dv/dt RATED IRFAF40900V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRFAF40 900V 2.5 4.3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

PD -90467REPETITIVE AVALANCHE AND dv/dt RATED IRF460500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF460 500V 0.27 21The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ach

PD - 97471AAUTOMOTIVE GRADEAUIRF4104AUIRF4104SFeatures Low On-ResistanceHEXFET Power MOSFET Dynamic dV/dT Rating 175C Operating TemperatureD V(BR)DSS40V Fast SwitchingRDS(on) typ.4.3m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax max. 5.5mG Lead-Free, RoHS CompliantID (Silicon Limited)120A Automotive Qualified *SID (Package Li

PD - 9.1478AIRF4905S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF4905S)VDSS = -55V Low-profile through-hole (IRF4905L) 175C Operating TemperatureRDS(on) = 0.02 Fast SwitchingG P-ChannelID = -74A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

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StrongIRFET IRF40R207 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies max 5.1mG Synchronous rectifier applications ID (Silicon Limited) 90A Resonant mode power supplie

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PD - 90429CIRFF420REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794HEXFETTRANSISTORS JANTXV2N6794THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF420 500V 3.0 1.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF470; BF472PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF470; BF472FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS2 Class-B

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF419NPN high-voltage transistor1997 Apr 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistor BF419FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 250 V).1 emitt

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF486; BF488PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF486; BF488FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421; BF423PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF421; BF423FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2

DISCRETE SEMICONDUCTORSDATA SHEETBF410A to DN-channel silicon field-effecttransistorsDecember 1990Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF410A to DDESCRIPTION PINNING - TO-92 VARIANTAsymmetrical N-channel planar1 = drainepitaxial junction field-effect2 = sou

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421; BF423PNP high voltage transistorsProduct specification 2004 Nov 10Supersedes data of 1996 Dec 09Philips Semiconductors Product specificationPNP high voltage transistors BF421; BF423FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2 collector Class-B video output stages in

PMF400UNN-channel TrenchMOS ultra low level FETRev. 01 11 February 2004 Product dataM3D1021. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Low on-state resistance Low threshold voltage.1.3 Applications Driver

DISCRETE SEMICONDUCTORS DATA SHEETPMBF4391; PMBF4392; PMBF4393N-channel FETsProduct specification April 1995NXP Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film c

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF457; BF458; BF459NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF457; BF458; BF459DESCRIPTIONNPN transistors in a TO-126; SOT32 plastic package.handbook,

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF483; BF485; BF487NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF483; BF485; BF487FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseA

DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF404UHF power MOS transistorProduct specification 2003 Sep 26Supersedes data of 1998 Jan 29Philips Semiconductors Product specificationUHF power MOS transistor BLF404FEATURES PINNING - SOT409A High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5

BLF4G20-110B;BLF4G20S-110BUHF power LDMOS transistorRev. 01 23 January 2006 Product data sheet1. Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1: Typical performancef = 1930 MHz to 1990 MHz; Tcase =25 C; in a class-AB production test circuit.Mode of operation VDS PL Gp D

BLF4G10-160UHF power LDMOS transistorRev. 01 22 June 2007 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from800 MHz to 1000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL PL(AV) Gp D ACPR400 ACPR600 A

BLF4G22-130; BLF4G22LS-130UHF power LDMOS transistorRev. 01 3 July 2007 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceTcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR(MHz) (V) (W

BLF4G10LS-120UHF power LDMOS transistorRev. 01 10 January 2006 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor for base station applications at frequencies from800 MHz to 1000 MHz.Table 1: Typical performancef = 920 MHz to 960 MHz; Th =25C; in a class-AB production test circuit; typical values.Mode of operation VDS PL Gp D ACPR40

BLF4G22-100; BLF4G22S-100UHF power LDMOS transistorRev. 01 10 January 2006 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1: Typical performanceTcase =25C; in a common source class-AB test circuit; IDq = 900 mA; typical valuesMode of operation f VDS PL Gp

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421; BF423PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF421; BF423FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF494; BF495NPN medium frequency transistors1997 Jul 08Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium frequency transistors BF494; BF495FEATURES PINNING Low current (max. 30 mA)PIN DESCRIPTION Low voltage

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF469; BF471NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF469; BF471FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS2 Intende

DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D302BF485PNNPN/PNP high voltage transistorsProduct specification 2000 Aug 02Philips Semiconductors Product specificationNPN/PNP high voltage transistors BF485PNFEATURES PINNING High voltage (max. 350 V)PIN DESCRIPTION Low current (max. 200 mA)1 and 4 emitter TR1; TR2 High power dissipation (600 mW)5 and 2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF469; BF471NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF469; BF471FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS2 Intende

DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF404UHF power MOS transistor1998 Jan 29Product specificationSupersedes data of 1997 Oct 28Philips Semiconductors Product specificationUHF power MOS transistor BLF404FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5 source

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF421L; BF423LPNP high-voltage transistors1999 Apr 21Product specificationSupersedes data of 1997 Apr 18Philips Semiconductors Product specificationPNP high-voltage transistors BF421L; BF423LFEATURES PINNING Low current (max. 50 mA)PIN DESCRIPTION High voltage (max. 300 V)1 base Available with a highe

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF420; BF422NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF420; BF422FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF458; BF459NPN high-voltage transistors1999 Apr 21Product specificationSupersedes data of 1996 Dec 06Philips Semiconductors Product specificationNPN high-voltage transistors BF458; BF459FEATURES Low current (max. 100 mA) High voltage (max. 300 V).handbook, halfpage2APPLICATIONS Intended for video o

BLF4G10LS-160UHF power LDMOS transistorRev. 01 19 June 2007 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from800 MHz to 1000 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL PL(AV) Gp D ACPR400 ACPR600

DISCRETE SEMICONDUCTORSDATA SHEETPMBF4391; PMBF4392;PMBF4393N-channel FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channeldepletion type junction field-effecttransistors on a plasticmicrominiature envelope intended f

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF450PNP medium frequency transistor1997 Jul 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium frequency transistor BF450FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 40 V).1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF488PNP high-voltage transistor1999 Apr 27Product specificationSupersedes data of 1996 Dec 09Philips Semiconductors Product specificationPNP high-voltage transistor BF488FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2 collector Intended for use in video output stages of bl

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186BF420; BF422NPN high-voltage transistorsProduct data sheet 2004 Nov 10Supersedes data of 1996 Dec 09NXP Semiconductors Product data sheetNPN high-voltage transistors BF420; BF422FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2 collector Class-B video output stages in colou

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF483; BF485; BF487NPN high-voltage transistors1999 Apr 12Product specificationSupersedes data of 1996 Dec 09Philips Semiconductors Product specificationNPN high-voltage transistors BF483; BF485; BF487FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2 collector Intended for us

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF470; BF472PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF470; BF472FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS2 Class-B

BLF4G20LS-110BUHF power LDMOS transistorRev. 01 10 January 2006 Product data sheet1. Product profile1.1 General description110 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1: Typical performancef = 1930 MHz to 1990 MHz; Tcase =25 C; IDq = 650 mA; unless otherwise specified; in a class-ABproduction test circuit; typi

BLF4G20LS-130UHF power LDMOS transistorRev. 01 1 June 2007 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.Table 1. Typical performanceTcase = 25 C; IDq = 900 mA; unless otherwise specified; in a class-AB production test circuit.Mode of operation f VDS PL PL(AV)

DISCRETE SEMICONDUCTORSDATA SHEETPMBF4416; PMBF4416AN-channel field-effect transistorApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistor PMBF4416; PMBF4416AFEATURES Low noise Interchangeability of drain andsource connections High gain.3handbook, halfpageDESC

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF420; BF422NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF420; BF422FEATURES PINNING Low feedback capacitance.PIN DESCRIPTION1 baseAPPLICATIONS2

STH90N15F4-2STP90N15F4N-channel 150 V, 12.5 m, 95 A TO-220, H2PAKSTripFET DeepGATE Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) max IDSTH90N15F4-2 150 V

STF40NF03LSTP40NF03LN-channel 30 V, 0.018 , 40 A TO-220, TO-220FPSTripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTF40NF03L 30 V 0.022 23 ASTP40NF03L 30 V 0.022 40 A3 3 Low threshold device2 21 1ApplicationTO-220TO-220FP Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique "single f

STP40N20-STF40N20STB40N20 - STW40N20N-CHANNEL 200V - 0.038 - 40A TO-220/FP/TO-247/D2PAKLOW GATE CHARGE STripFET MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP40N20 200 V

STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on) max ID PTOT3STF4N62K3 25 W 32211STFI4N62K3 25 WTO-220FPIPAKSTI4N62K3 620 V

SGSIF461FAST-SWITCH HOLLOW-EMITTERNPN TRANSISTOR VERY HIGH SWITCHING SPEED NPN TRANSISTOR LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: SWITCH MODE POWER SUPPLIESDESCRIPTION 3The SGSIF461 is manufactured using2Multiepitaxial Mesa technology for cost-effective1high performance and uses a Hollow Emitterstructure to enhance switching speeds. ISOWATT218The SGSF serie

BUF420AHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS:3 SWITCH MODE POWER SUPPLIES21 MOTOR CONTROLDESCRIPTIONTO-218The BUF420A is manufactured using HighVoltage Multi Epitaxial Planar techno

STF4N62K3, STI4N62K3STP4N62K3, STU4N62K3N-channel 620 V, 1.7 , 3.8 A SuperMESH3 Power MOSFETTO-220FP, IPAK, TO-220, IPAKFeaturesOrder codes VDSS RDS(on) max ID Pw32STF4N62K3 25 W132STI4N62K3 70 W 1620 V

BUF420AWHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: 32 SWITCH MODE POWER SUPPLIES1 MOTOR CONTROL TO-247DESCRIPTION The BUF420AW is manufactured using HighVoltage Multi Epita

STL25N15F4N-channel 150 V, 0.057 , 6 A, PowerFLAT(5x6)STripFET DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTL25N15F4 150 V

STD4N52K3, STF4N52K3STP4N52K3, STU4N52K3N-channel 525 V, 2.5 A, 2.1 , IPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax 33211STD4N52K3 2.5 A 45 WDPAKIPAKSTF4N52K3 2.5 A 20 W525 V

BUF460AVNPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOADAREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEAPPLICATIONS: MOTOR CONTROL SMPS & UPSISOTOP WELDING EQUIPMENTINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Paramete

STB70N10F4, STD70N10F4STP70N10F4, STW70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in TO-220, DPAK, TO-247, D2PAKFeaturesType VDSS RDS(on) max IDSTB70N10F4 100 V

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

BUF410AHigh voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirementsApplications 321 Switch mode power suppliesTO-247 Motor control DescriptionThe BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram

STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

BUF420BUF420MHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS13APPLICATIONS:22 SWITCH MODE POWER SUPPLIES1 MOTOR CONTROLTO-218 TO-3DESCRIPTION(version R)The BUF420 and BUF420

SGSIF344SGSIF444HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS SGSIF344 IS SGS-THOMSON PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS: SWITCH MODE POWER SUPPLIES HORIZONTAL DEFLECTION FOR COLOUR 3322TVS AND MONITORS1 1DESCRIPTIONISOWATT220 ISOWATT218The SGSIF344 and SGSIF444 are manufacturedu

STF42SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTF42 642 SILICON EPITAXIAL PLANAR NPN HIGHVOLTAGE TRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE ISSTF92APPLICATIONS SOT-89 VIDEO AMPLIFIER CIRCUITS (RGBCATHODE CURRENT CONTROL) TELEPHONE WIRELINE INTERFACE (HOOKSWITCHES, D

STF40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32 Zener-protected 1Applications TO-220FP Switching appl

STI70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in I2PAKFeaturesType VDSS RDS(on) max IDSTI70N10F4 100 V

STB70N10F4, STD70N10F4STP70N10F4, STW70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in TO-220, DPAK, TO-247, D2PAKFeaturesType VDSS RDS(on) max IDSTB70N10F4 100 V

BUF420MHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 1APPLICATIONS: 2 SWITCH MODE POWER SUPPLIES MOTOR CONTROL TO-3DESCRIPTION (version "R")The BUF420M is manufactured using HighVoltage M

BUF410HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS:3 SWITCH MODE POWER SUPPLIES2 MOTOR CONTROL1DESCRIPTIONTO-218The BUF410 is manufactured using High VoltageMulti Epitaxial Planar technolo

STH85N15F4-2STP85N15F4N-channel 150 V, 0.015 , 85 A TO-220, H2PAKSTripFET DeepGATE Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) max ID2STH85N15F4-2 150 V

STD78N75F4STP78N75F4N-channel 75 V, 0.0092 , 78 A TO-220, DPAKSTripFET DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD78N75F4 75 V

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V

STx42N65M5N-channel 650 V, 0.070 , 33 A MDmesh V Power MOSFETin I2PAK, TO-220, TO-220FP, D2PAK and TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max3 3321STB42N65M5 710 V

STB120N10F4, STP120N10F4N-channel 100 V, 8 m typ., 120 A, STripFET DeepGATE Power MOSFETs in D2PAK and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max. IDTABSTB120N10F4TAB100 V 10 m 120 A STP120N10F4 N-channel enhancement mode33211 Very low on-resistanceD 2PAK TO-220 Low gate charge 100% avalanche rate

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5N-channel 800 V, 2.1 typ., 3 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeatures TABOrder code VDS RDS(on) max. ID PTOT31STD4N80K5 60 W3DPAK2STF4N80K5 20 W1800 V 2.5 3 ATO-220FPTAB STP4N80K560 WTAB STU4N80K5 Industrys lowest RDS(on) x area3

STF40NF03LSTP40NF03LN-channel 30 V, 0.018 , 40 A TO-220, TO-220FPSTripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTF40NF03L 30 V 0.022 23 ASTP40NF03L 30 V 0.022 40 A3 3 Low threshold device2 21 1ApplicationTO-220TO-220FP Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique "single f

STF40NF06N-channel 60V - 0.024 - 23A - TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTF40NF06 60V

STH90N55F4-2STP90N55F4N-channel 55 V, 0.0064 , 90 A TO-220, H2PAKSTripFET DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTH90N55F4-2 55 V

STD4NK50ZD - STD4NK50ZD-1STF4NK50ZD - STP4NK50ZDN-channel 500V - 2.4 - 3A - TO-220 - TO-220FP- DPAK - IPAKFast diode SuperMESH Power MOSFETGeneral features3Type VDSS RDS(on) ID Pw1STD4NK50ZD-1 500V

STB4N62K3, STF4N62K3STI4N62K3, STP4N62K3N-channel 620 V, 1.8 , 3.8 A SuperMESH3 Power MOSFETD2PAK, TO-220FP, I2PAK, TO-220Preliminary dataFeaturesRDS(on) Type VDSS ID Pwmax33311STB4N62K3 70 W 21DPAKSTF4N62K3 25 WTO-220FP620 V

STF40N60M2, STFI40N60M2, STFW40N60M2N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF40N60M2STFI40N60M2 650 V 0.088 34 A321 STFW40N60M2123TO-220FPI2PAKFP (TO-281) Extremely low gate charge Lower RDS(on) x area

STP80N70F4N-channel 68 V, 8.2 m typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDSTP80N70F4 68 V

STP75N75F4N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATEPower MOSFET in a TO-220 packageDatasheet production dataFeaturesTABType VDSS RDS(on) max IDSTP75N75F4 75 V

STP40NF20 - STF40NF20STB40NF20 - STW40NF20N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247Low gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PW3STB40NF20 200V

STD4NK50ZD - STD4NK50ZD-1STF4NK50ZD - STP4NK50ZDN-channel 500V - 2.4 - 3A - TO-220 - TO-220FP- DPAK - IPAKFast diode SuperMESH Power MOSFETGeneral features3Type VDSS RDS(on) ID Pw1STD4NK50ZD-1 500V

BF420SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBF420 BF420 TO-92 / BulkBF420-AP BF420 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN HIGHVOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE ISBF421TO-92 TO-92APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGBCATHODE CURR

STS5N15F4N-channel 150 V, 0.057, 5 A, SO-8STripFET DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTS5N15F4 150 V

STF45N10F7N-channel 100 V, 0.0145 typ., 30 A, STripFET VII DeepGATE Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesRDS(on) Order code VDS ID PTOTmax.(1)STF45N10F7 100 V 0.018 30 A 25 W1. @ VGS = 10 V Ultra low on-resistance32 100% avalanche tested1TO-220FPApplications Switching applicationsDescriptionFigure 1. Int

BUF405ABUF405AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS HIGH SWITCHING SPEED NPN POWERTRANSISTORS EASY TO DRIVE HIGH VOLTAGE FOR OFF-LINEAPPLICATIONS 100 KHz SWITCHING SPEED LOW COST DRIVE CIRCUITS LOW DYNAMIC SATURATION3 32 2APPLICATIONS:11 SWITCH MODE POWER SUPPLIES MOTOR DRIVERSTO-220 ISOWATT220DESCRIPTIONThese Easy-to-Drive FASTSWITCH NPN p

STP165N10F4N-channel 100 V, 4.4 m, 120 A TO-220STripFET DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP165N10F4 100 V

BF421SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBF421 BF421 TO-92 / BulkBF421-AP BF421 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP HIGHVOLTAGE TRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISBF420TO-92 TO-92APPLICATIONS Bulk Ammopack VIDEO AMPLIFIER CIRCUITS (RGBCATHODE CURR

BUF460AVNPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCEAPPLICATIONS: MOTOR CONTROL SMPS & UPSISOTOP WELDING EQUIPMENTINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM

BFL4037Ordering number : ENA1831SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4037ApplicationsFeatures ON-resistance RDS(on)=0.33 (typ.) Input capacitance Ciss=1200pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

TF408Ordering number : ENA2008SANYO SemiconductorsDATA SHEETN-Channel Silicon Junction FETLow-Frequency General-Purpose Amplifier, TF408Impedance Converter ApplicationsApplications Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applicationsFeatures Ultrasmall package facilitates miniaturization in end products : 1.0mm0.6mm0.27mm (m

BFL4036Ordering number : ENA1830SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4036ApplicationsFeatures ON-resistance RDS(on)=0.4 (typ.) Input capacitance Ciss=1000pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

BFL4007Ordering number : ENA1689SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4007ApplicationsFeatures Reverse recovery time trr=95ns (typ) ON-resistance RDS(on)=0.52 (typ) Input capacitance Ciss=1200pF (typ) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings

TF410Ordering number : ENA2007SANYO SemiconductorsDATA SHEETN-Channel Silicon Junction FETImpedance Converter, TF410Infrared Sensor ApplicationsApplications Impedance conversion, infrared sensor applicationsFeatures Ultrasmall package facilities miniaturization in end products : 1.0mm0.6mm0.27mm (max 0.3mm) Small IGSS : max --500pA (VGSS= --20V, VDS=0V)

BFL4001Ordering number : ENA1638SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4001ApplicationsFeatures Low ON-resistance. High-speed switching. Avalanche resistance guarantee. 10V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw

April 2000TMQFETQFETQFETQFETFQPF4N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has been e

May 2001TMQFETFQPF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailore

August 2014FDPF44N25TN-Channel UniFETTM MOSFET250 V, 44 A, 69 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 69 m (Max.) @ VGS = 10 V, ID = 22 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 47 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 60 pF)provi

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been

December 2014FCPF4300N80ZN-Channel SuperFET II MOSFET800 V, 1.6 A, 4.3 Features Description RDS(on) = 3.4 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 6.8 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ.

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 250V, RDS(on) = 0.07 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been e

PN4117 MMBF4117PN4118 MMBF4118PN4119 MMBF4119GSG TO-92SSOT-23 DDMark: 61A / 61C / 61ENOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low current DC and audio applications.These devices provide excellent performance as input stages forsub-picoamp instrumentation or any high impedance signalsources. Sourced from Process 53.Abso

August 2010FGPF4536360V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDPapplications where low conduction and switching losses are High input impedanceessential. Fast switching RoH

December 2000TMQFETQFETQFETQFETFQPF44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 27A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is esp

May 2001TMQFETFQAF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -38A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailore

IGBTFGAF40N60UFUltrafast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed

March 2005MMBF4416AN-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50.GSSOT-23DMark: 6BGAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 35 VVGS Gate-Source Voltage -35 VIGF Forward Gate Current 10 mATJ, TSTG Operating and Storage Junction Temperature Range - 5

PN4391 MMBF4391PN4392 MMBF4392PN4393 MMBF4393GSG TO-92SSOT-23 DDMark: 6J / 6K / 6GNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabalized amplifiers. Sourcedfrom Process 51. See J111 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted

PN4091 MMBF4091PN4092 MMBF4092PN4093 MMBF4093GDG TO-92S SSOT-23DMark: 61J / 61K / 61LNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabalized amplifiers. Sourcedfrom Process 51. See J111 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise no

FJAF4310Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210TO-3PF11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 140 VVEBO Emitter-Base

August 2000TMQFETQFETQFETQFETFQPF4P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.4A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has bee

December 2013FCPF400N60N-Channel SuperFET II MOSFET600 V, 10 A, 400 mFeatures Description 650 V @ TJ = 150CSuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 350 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 28 nC)and lo

IGBTFGAF40N60UFDUltrafast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where high spe

August 2000TMQFETQFETQFETQFETFQAF44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35.6A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been

TMQFETFQP4N90C/FQPF4N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC)planar stripe, DMOS technology. Low Crss ( typical 5.6 pF)This advanced technology has been especially tailored to

May 2001TMQFETFQPF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailore

September 2014FCPF400N80ZL1N-Channel SuperFET II MOSFET 800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u

October 2001TMQFETFQPF4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been especially

September 2000TMQFETFQPF4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially tail

April 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has b

August 2010FGPF4633330V PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70Ations where low conduction and switching losses are essential. High input impedance Fast switching R

August 2010FGPF4533330V, PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 Ations where low conduction and switching losses are essential. High input impedance Fast switching

November 2013FDPF4N60NZN-Channel UniFETTM II MOSFET600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF)on

August 2000TMQFETQFETQFETQFETFQPF44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been e

April 2009MMBF4416N-Channel RF Amplifiers This device is designed for RF amplifiers.G Sourced from process 50.SSOT-23DMark: 6AAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mATJ, TSTG Junction and Storage Temperature Range -55 to +150 C

December 2000TMQFETQFETQFETQFETFQAF44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is esp

March 2009 TMUniFETFDP44N25 / FDPF44N25T250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 47 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 60 pF) stripe, DMOS technology. Fast switchingThis advanced technology

November 2014FCPF400N80ZN-Channel SuperFET II MOSFET800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 uJ @ 400

December 2000TMQFETQFETQFETQFETFQPF4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technolog

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been

QFETFQP45N15V2/FQPF45N15V2150V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC)planar stripe, DMOS technology. Low Crss ( typical 135 pF)This advanced technology has been especially tailor

FJAF4210Audio Power Amplifier High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJAF4310TO-3PF11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -200 VVCEO Collector-Emitter Voltage -140 VVEBO Emitter-B

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been

July 2006BF494tmNPN RF TransistorTO-921. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 30 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 30 mATJ Junction Temperature 150 CTSTG Storage Temperature Range - 55 ~ 150 C

DATA SHEETSILICON TRANSISTORKN4xxxRESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING (Unit: mm) Compact package 0.3 +0.10+0.1 Resistors built-in type 0.15 0.05 Complementary to KA4xxx 30 to 0.1ORDERING INFORMATION 21PART NUMBER PACKAGE 0.2+0.10KN4xxx SC-75 (USM)0.60.5 0.50.75 0.051.0ABSOLUTE MAXIMUM RATINGS (TA = 25

This datasheet has been download from:www.datasheetcatalog.comDatasheets for electronics components.

SSF4N90ASAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

SSF4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 (Typ.)c1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

BF 414NPN Silicon RF Transistor BF 414 For low-noise, common baseVHF and FM stages231Type Marking Ordering Code Pin Configuration Package1)1 2 3BF 414 Q62702-F517 C B E TO-92Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 30 VCollector-base voltage VCB0 40Emitter-base voltage VEB0 4Collector current IC 25 mABase current IB 3Total p

PNP Silicon Transistors BF 421With High Reverse Voltage BF 423 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 420, BF 422 (NPN)231Type Marking Ordering Code Pin Configuration Package1)1 2 3BF 421 Q62702-F532 E C B TO-92BF 423 Q62702-F496Maximum RatingsParameter Symbol Values UnitBF 421 BF 423Collector-e

NPN Silicon Transistors BF 420With High Reverse Voltage BF 422 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 421, BF 423 (PNP)231Type Marking Ordering Code Pin Configuration Package1)1 2 3BF 420 Q62702-F531 E C B TO-92BF 422 Q62702-F495Maximum RatingsParameter Symbol Values UnitBF 420 BF 422Collector-e

RF4C050APDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 26m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4)

RF4E080BN Nch 30V 8A Power MOSFET DatasheetlOutline(6) VDSS30V(5) HUML2020L8(4) RDS(on) at 10V (Max.)17.6mW(4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 24.6mW(3) (7) ID8A(3) (2) PD2.0W (1) lFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate (

RF4E080GN Nch 30V 8A Power MOSFET DatasheetlOutline(6) VDSS30V (5) HUML2020L8(4) RDS(on) at 10V (Max.)17.6mW(4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 22.8mW(3) (7) ID8A(3) (2) PD2.0W (1) lFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate (7

RF4E110GN Nch 30V 11A Power MOSFET DatasheetlOutline(6) VDSS (5) 30VHUML2020L8(4) RDS(on) at 10V (Max.)11.3mW(4) (1) (5) (8) (2) (6) RDS(on) at 4.5V (Max.)15.3mW(3) (7) ID11A(3) (2) PD (1) 2.0WlFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate

RF4E070GN Nch 30V 7A Power MOSFET DatasheetlOutline(6) VDSS30V(5) HUML2020L8(4) RDS(on) at 10V (Max.)21.4mW(4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 30.0mW(3) (7) ID7A(3) (2) PD (1) 2.0WlFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate (7)

RF4E075ATDatasheetPch -30V -7.5A Middle Power MOSFETlOutlinel HUML2020L8VDSS-30VRDS(on)(Max.) 21.7mID 7.5APD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4) Hal

RF4C100BCDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 15.6mID 10APD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4) Halog

RF4E110BN Nch 30V 11A Power MOSFET DatasheetlOutline(6) VDSS30V (5) HUML2020L8(4) RDS(on) at 10V (Max.)11.1mW(4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 15.4mW(3) (7) ID11A(3) (2) PD2.0W (1) lFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate (7)

RF4E070BN Nch 30V 7A Power MOSFET DatasheetlOutline(6) VDSS30V (5) HUML2020L8(4) RDS(on) at 10V (Max.)28.6mW(4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 40.0mW(3) (7) ID7A(3) (2) PD2.0W (1) lFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate (7

IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian

IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian

CMPF4416Awww.centralsemi.comSURFACE MOUNTN-CHANNEL DESCRIPTION:SILICON JFETThe CENTRAL SEMICONDUCTOR CMPF4416A type is an epoxy molded N-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.MARKING CODE: 6BGSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSDrain-Source Voltage VDS 35 VGate

CMPF4391CMPF4392CMPF4393www.centralsemi.comSURFACE MOUNTDESCRIPTION:N-CHANNEL The CENTRAL SEMICONDUCTOR CMPF4391 series SILICON JFETtypes are N-Channel Silicon Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications.MARKING CODE: CMPF4391: 6JCMPF4392: 6KCMPF4393: 6GSOT-2

IRFPF40, SiHFPF40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 2.5 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 120COMPLIANT Fast SwitchingQgs (nC) 16 Ease of ParallelingQgd (nC) 67 Simple Drive RequirementsConfiguration Single Complian

Technische Information / Technical InformationIGBT-ModuleDF400R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CES

Technische Information / Technical InformationIGBT-ModuleFF450R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannun

Technische Information / Technical InformationIGBT-ModulFF450R17ME4IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Mo

Technische Information / Technical InformationIGBT-ModuleF4-50R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 70C, T = 150C I 50 AC vj max C nomContinuous DC collector cur

Technische Information / Technical InformationIGBT-ModuleFF450R17IE4IGBT-modulesPrimePACK2 Modul und NTCPrimePACK2 module and NTCV = 1700VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsumrichter High Power Converters Motor

FF45MR12W1M1_B11EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTCEasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTCVorlufige Daten / Preliminary DataJV = 1200VDSSI = 25A / I = 50AD nom DRMPotentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC c

Technische Information / Technical InformationIGBT-ModulFF450R07ME4_B11IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTCV = 650VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Hybrid-Nutzfahrzeug

Technische Information / Technical InformationIGBT-ModuleFF400R06KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 600 Vvj CESColle

Technische Information / Technical InformationIGBT-ModuleF4-100R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 65C, T = 150C I 100 AC vj max C nomContinuous DC collector c

Technische Information / Technical InformationIGBT-ModulFF450R12KT4PIGBT-Module62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary Dat

BSF450NE7NH3 GMOSFETCanPAK SOptiMOS3 Power-MOSFET, 75 VFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance Dual sided cooling Low parasitic inductance Low profile (

Technische Information / Technical InformationIGBT-ModuleFF450R17ME3IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoDUAL3 module with trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspan

IRF40H233MOSFETSSO8 dual (TDSON-8-4)StrongIRFET1Benefits82736 Optimized for broadest availability from distribution partners 45 175C junction temperature rated 100% UIL tested Product validation according to JEDEC standard Pb-Free ; RoHS Compliant ; Halogen-Free81726354Potential applications Brushed Motor drive applicatio

Technische Information / Technical InformationIGBT-ModuleFF450R06ME3IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High Power C

Technische Information / Technical InformationIGBT-ModulFF450R17ME4_B11IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und PressFIT / NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and PressFIT / NTCV = 1700VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Motorantriebe

Technische Information / Technical InformationIGBT-ModuleFF400R07KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled DiodeV = 650VCESI = 400A / I = 800AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motor

Technische Information / Technical InformationIGBT-ModuleF4-75R06W1E3IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters I

Technische Information / Technical InformationIGBT-ModuleFF400R12KT3_EIGBT-modules62mm C-Serien Modul mit gemeinsamen Emitter 62mm C-series module with common emitter Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor

Technische Information / Technical InformationIGBT-ModuleFF450R12ME4_B11IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 450A / I = 900AC nom CRMTypische Anwendunge

F4-200R17N3E4EconoPACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC V = 1700VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage convertersEle

Technische Information / Technical InformationIGBT-ModuleF4-50R06W1E3IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters I

Technische Information / Technical InformationIGBT-ModuleFF400R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper

/ Technical InformationIGBT-F4-50R12KS4_B11IGBT-modulesEconoPACK2 IGBT pressfitNTCEconoPACK2 module with the fast IGBT2 for high-frequency switching and PressFIT / NTC / Preliminary DataV = 1200VCESI = 50A / I = 100AC nom CRM Typ

Technische Information / Technical InformationIGBT-ModuleF4-75R12MS4IGBT-modulesEconoDUAL2 Modul mit schnellem IGBT2 fr hochfrequentes Schalten und NTCEconoDUAL2 module with the fast IGBT2 for high-frequency switching and NTCV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency

Technische Information / Technical InformationIGBT-ModuleFF450R12IE4IGBT-modulesPrimePACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTCPrimePACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications

Technische Information / Technical InformationIGBT-ModuleF4-30R06W1E3IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters In

Technische Information / Technical InformationIGBT-ModulFF400R17KE4IGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeVorlufige Daten / Preliminary DataV = 1700VCESI = 400A / I = 800AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumric

Technische Information / Technical InformationIGBT-ModuleF4-150R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 60C, T = 150C I 150 AC vj max C nomContinuous DC collector c

StrongIRFET IRF40H210 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. 1.4m Battery powered circuits max 1.7m Half-bridge and full-bridge topologies Synchronous rectifier applications ID (Silicon Limited) 201A Resonant mode power supplies

Technische Information / Technical InformationIGBT-ModuleDF300R07PE4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications An

Technische Information / Technical InformationIGBT-ModuleFF450R12ME4IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor Drives

/ Technical InformationIGBT-F4-75R12KS4_B11IGBT-modulesEconoPACK2 IGBT pressfitNTCEconoPACK2 module with the fast IGBT2 for high-frequency switching and PressFIT / NTC / Preliminary DataV = 1200VCESI = 75A / I = 150AC nom CRM Typ

FF450R17ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and NTC / pre-appliedThermal Interface MaterialV = 1700VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Motorantriebe

FF450R12ME4E_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTCV = 1200VCESI = 450A / I = 900AC nom CRMPotentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Motorantriebe Motor drives

FF450R33T3E3XHP3 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 DiodeXHP3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diodeV = 3300VCESI = 450A / I = 900AC nom CRMPotentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor drives Traktionsumrichter Traction drives

Technische Information / Technical InformationIGBT-ModuleF4-75R07W1H3_B11AIGBT-modulesEasyPACK Modul mit schnellem Trench/Feldstopp IGBT3 und Rapid 1 Diode und PressFIT / NTCEasyPACK module with fast Trench/Fieldstop IGBT3 and Rapid 1 diode and PressFIT / NTCV = 650VCESI = 37,5A / I = 75AC nom CRMTypische Anwendungen Typical Applications Anwendungen im Automobil

IFF450B12ME4S8P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC /StrommesswiderstandEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC /current sense shuntV = 1200VCESI = 450A / I = 900AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter H

Technische Information / Technical InformationIGBT-ModuleF4-75R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 65C, T = 150C I 75 AC vj max C nomContinuous DC collector cur

FF450R17ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und PressFIT / NTC /TIMEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and PressFIT / NTC /TIMV = 1700VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives

PD - 94816IRF4905PbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.02G P-Channel Fully Avalanche RatedID = -74A Lead-Free SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextre

Technische Information / Technical InformationIGBT-ModulF4-75R07W2H3_B51IGBT-ModuleEasyBRIDGE Modul mit CoolMOS und PressFIT / NTCEasyBRIDGE module with CoolMOS and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Ele

Technische Information / Technical InformationIGBT-ModuleFF450R12KT4IGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diodeV = 1200VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High Power

/ Technical InformationIGBT- F4-50R07W2H3_B51IGBT-ModuleEasyBRIDGE CoolMOS and PressFIT / NTCEasyBRIDGE module with CoolMOS and PressFIT / NTC / Preliminary DataV = 650VCESI = 50A / I = 100AC nom CRM Typical Applications

FF450R12ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications Motorantriebe

Technische Information / Technical InformationIGBT-ModuleF4-50R12MS4IGBT-modulesEconoDUAL2 Modul mit schnellem IGBT2 fr hochfrequentes Schalten und NTCEconoDUAL2 module with the fast IGBT2 for high-frequency switching and NTCV = 1200VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GData SheetRev. 2.2FinalPower Management & MultimarketOptiMOS3 Power-MOSFET, 75 VBSF450NE7NH3 GCanPAK S1 DescriptionFeatures Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance

AUIRF4104 AUTOMOTIVE GRADE AUIRF4104S Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 4.3m 175C Operating Temperature Fast Switching max. 5.5m Fully Avalanche Rated ID (Silicon Limited) 120A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A L

IFF450B12ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC /StrommesswiderstandEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC /current sense shuntV = 1200VCESI = 450A / I = 900AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter Hig

Technische Information / Technical InformationIGBT-ModuleFF450R12KE4_EIGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 450A / I = 900AC nom CRMTypische Anwendungen Typical Applications

Technische Information / Technical InformationIGBT-ModulFF400R17KE4_EIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeVorlufige Daten / Preliminary DataV = 1700VCESI = 400A / I = 800AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumr

Technische Information / Technical InformationIGBT-ModuleFF400R12KE3_B2IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT3, Emitter Controlled High Efficiency Diode und M5 Lastanschlu 62mm C-series module with trench/fieldstop IGBT3 Emitter Controlled High Efficiency diode and M5 power terminals IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated Va

Technische Information / Technical InformationIGBT-ModulFF400R12KT3P_EIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200V

AUTOMOTIVE GRADE AUIRF4905 HEXFET Power MOSFET Features Advanced Planar Technology VDSS -55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.02 175C Operating Temperature Fast Switching ID -74A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S D

Technische Information / Technical InformationIGBT-ModuleF4-75R12KS4_B11IGBT-modulesEconoPACK2 Modul mit schnellem IGBT2 fr hochfrequentes Schalten und PressFIT / NTCEconoPACK2 module with the fast IGBT2 for high-frequency switching and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 75A / I = 150AC nom CRMTypische Anwendungen Typical Applications

Technische Information / Technical InformationIGBT-ModulFF450R12KE4PIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200VC

AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features VDSS -55V Advanced Planar Technology P-Channel MOSFET RDS(on) max. 20m Low On-Resistance ID (Silicon Limited) -70A 150C Operating Temperature Fast Switching ID (Package Limited) -42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D

F4-250R17MP4_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 DiodeEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 250A / I = 500AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage converters Windge

Advance Technical InformationHigh Voltage XPTTM IGBTVCES = 4500VIXYF40N450IC110 = 32AVCE(sat) 3.9V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VVCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 60 A1

Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBF42N300Monolithic Bipolar MOSIC110 = 24ATransistorVCE(sat) 3.0V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 V12VGEM Transient 35 V

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab

IXKF 40N60SCD1VDSS = 600 VCoolMOS 1) Power MOSFETID25 = 41 Awith Series Schottky Diode and RDS(on) typ. = 60 mUltra Fast Antiparallel Diodetrr = 70 nsin High Voltage ISOPLUS i4-PAC5 ISOPLUS i4-PACDSDFPreliminary data12T15 E728732FeaturesMOSFET T fast CoolMOS 1) power MOSFET 3rd Symbol Conditions Maximum Ratingsgeneration - high bl

Advance Technical InformationHiperFETTM VDSS = 1000VMMIX1F44N100Q3Power MOSFET ID25 = 30A Q3-Class RDS(on) 245m trr 300ns(Electrically Isolated Tab)DN-Channel Enhancement ModeFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 V Isolated TabVDGR TJ = 25C to 150

IXBF 40N160IC25 = 28 AHigh VoltageVCES = 1600 VBIMOSFETTMVCE(sat) = 6.2 Vin High Voltage ISOPLUS i4-PACTMtf = 40 nsMonolithic Bipolar MOS Transistor15Features IGBT High Voltage BIMOSFETTMSymbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage dropVCES TVJ = 25C to 150C 1600 V- fast switching for high frequ

Advance Technical InformationPolarTM HiperFETTM VDSS = 1100VMMIX1F40N110PPower MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab)trr 300nsDN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 V Isolated TabVDGR TJ

NSVF4020SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 8 V, 150 mA Features fT = 16 GHz t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BF421, BF423High Voltage TransistorsPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantMAXIMUM RATINGSRating Symbol BF421 BF423 UnitTO-92Collector-Emitter Voltage VCEO -300 -250 VdcCASE 29STYLE 14Collector-Base Voltage VCBO -300 -250 Vdc1122Emitter-Base Voltage VEBO -5.0 Vdc33STRAIGHT LEAD BENT

NSVF4017SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable forautomotive applications.Features 1

NTLJF4156NPower MOSFET andSchottky Diode30 V, 4.6 A, mCool] N-Channel, with2.0 A Schottky Barrier Diode, 2x2 mmhttp://onsemi.comWDFN PackageMOSFETFeaturesV(BR)DSS RDS(on) MAX ID MAX (Note 1) WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction70 mW @ 4.5 V Co-Packaged MOSFET and Schottky For Easy Circuit Layout30 V 90 mW @ 2.5 V 4.6 A RD

MPF4392, MPF4393Preferred DevicesJFET Switching TransistorsN-Channel - DepletionFeatures Pb-Free Packages are Available*http://onsemi.com2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 30 Vdc GATEDrain-Gate Voltag VDG 30 VdcGate-Source Voltage VGS 30 Vdc1 DRAINForward Gate Current IG(f) 50 mAdcTotal Device Dissipation PD@ TA = 25C

NSVF4009SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 3.5 V, 40 mA Features fT = 25 GHz

Field Stop Trench IGBT650 V, 40 AFGAF40S65AQDescriptionUsing novel field stop IGBT technology, ON Semiconductors newseries of field stop 4th generation of RC IGBTs offer the optimumperformance for PFC applications and welder where low conductionwww.onsemi.comand switching losses are essential.FeaturesVCES IC Maximum Junction Temperature: TJ = 175C650 V 40 A

NSVF4015SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable for12 V, 100 mAautomotive applications

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBF4391LT1G,MMBF4392LT1G,MMBF4393LT1GJFET Switching TransistorsN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGS1 DRAINRating Symbol Value UnitDrain-Source Voltage VDS 30 VdcDrain-Gate Voltage VDG 30 Vdc3Gate-Source Voltage VGS 30 Vdc1Forward Gate Current IG(f) 50 mAdc

NTLJF4156NMOSFET Power,N-Channel with SchottkyBarrier Diode, SchottkyDiode, mCool, WDFNhttp://onsemi.com2X2 mmMOSFET30 V, 4.6 A, 2.0 AV(BR)DSS RDS(on) MAX ID MAX (Note 1)70 mW @ 4.5 VFeatures30 V 90 mW @ 2.5 V 4.6 A WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction125 mW @ 1.8 V Co-Packaged MOSFET and Schottky For Easy Circuit Layo

MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36

www.onsemi.comFDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has b

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number : ENA2300A TF412S N-Channel JFET http://onsemi.com 30V, 1.2 to 3.0mA, 5.0mS, SOT-883Features Electrical Connection Small IGSS : max 1.0nA (VGS= 20V, VDS=0V) 3 Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz) 1 : Source Ultrasmall package facilitates miniaturization in end products 2 : Drain Halogen free compliance 3 : GateApplication

MMBF4416LT1Preferred Device JFET VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Source Voltage VDS 30 VdcDrain-Gate Voltage VDG 30 Vdc1 DRAINGate-Source Voltage VGS 30 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS3SOT-23 (TO-236)Characteristic Sym

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTLUF4189NZPower MOSFET andSchottky Diode30 V, N-Channel with 0.5 A SchottkyBarrier Diode, 1.6 x 1.6 x 0.55 mmmCoolt PackageFeatureshttp://onsemi.com Low Qg and Capacitance to Minimize Switching LossesMOSFET Low Profile UDFN 1.6x1.6 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Low VF Schottky Diode ESD Protected Gate 200 mW @ 4.5 V 1.5 A This i

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BF420, BF422High Voltage TransistorsNPN SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR2MAXIMUM RATINGSRating Symbol BF420 BF422 Unit3Collector-Emitter Voltage VCEO 300 250 VdcBASECollector-Base Voltage VCBO 300 250 Vdc1Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 50 mAdcCollector Current - Peak ICM 100

BF493SHigh Voltage TransistorPNP SiliconFeatures This is a Pb-Free Device*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO -350 Vdc2BASECollector-Base Voltage VCBO -350 VdcEmitter-Base Voltage VEBO -6.0 Vdc1Collector Current - Continuous IC -500 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDera

MJF47GHigh Voltage PowerTransistorIsolated Package ApplicationsDesigned for line operated audio output amplifiers, switching powerhttp://onsemi.comsupply drivers and other switching applications, where the mountingsurface of the device is required to be electrically isolated from theheatsink or chassis.NPN SILICONPOWER TRANSISTORFeatures Electrically Similar to the Po

MJF47High Voltage PowerTransistorIsolated Package ApplicationsDesigned for line operated audio output amplifiers, switching powerhttp://onsemi.comsupply drivers and other switching applications, where the mountingsurface of the device is required to be electrically isolated from theNPN SILICONheatsink or chassis.POWER TRANSISTORFeatures1 AMPERE Electrically Similar

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number : ENA2259B TF414 N-Channel JFET http://onsemi.com 40V, 50 to 130A, 0.11mS, SOT-883Features Electrical Connection Small IGSS : max 500pA (VGS= 20V, VDS=0V) Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz) 3 Ultrasmall package facilitates miniaturization in end products 1 : Source Halogen free compliance 2 : Drain3 : GateApplicat

MJF44H11 (NPN),MJF45H11 (PNP)Preferred DevicesComplementaryPower TransistorsFor Isolated Package Applicationshttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages inSILICON POWER TRANSISTORSapplications such as switching regulators, converters and power10 AMPERESamplifiers.80 VOLTS, 36

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

UNISONIC TECHNOLOGIES CO., LTD BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage: V =250V. CEO* Complementary to UTC BF423. 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BF422L-T92-B BF422G-T92-B TO-92 E C B Tape BoxBF422L-T92-K BF422G-T92-K TO-92 E C B

UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252The UTC UF4N20 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. 1 FEATURES SOT-223* RDS(ON)

UNISONIC TECHNOLOGIES CO., LTD BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage: V =250V. CEO* Complementary to UTC BF423. 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BF422L-T92-B BF422G-T92-B TO-92 E C B Tape BoxBF422L-T92-K BF422G-T92-K TO-92 E C B

UNISONIC TECHNOLOGIES CO., LTD UF450 Power MOSFET 14A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UF450 uses advanced UTC technology to provide excellent RDS (ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse cir

DARF446GARF447STO-247CommonSourceRF POWER MOSFETsN- CHANNEL ENHANCEMENT MODE 250V 250W 65MHzThe ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pullscientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Low Cost Common Source RF Package. Specified 250 Volt, 40.68 MHz Charact

BF422SemiconductorSemiconductorNPN Silicon TransistorDescriptions High voltage application Monitor equipment applicationFeatures Collector-Emitter voltage : VCEO=250V Complementary pair with BF423Ordering InformationType NO. Marking Package Code BF422 BF422 TO-92Outline Dimensions unit : mm3.450.14.50.12.250.10.40.022.0

European Power-Semiconductor andElectronics CompanyGmbH + Co. KGMarketing InformationFD 600 R 12 KF455,211,85M8screwing depthmax. 813031,5114E1 C2C1 E2E1C1G1167M440282,5 deep 2,5 deepscrewing depth53max. 8E1 C2 (K)E1G1C1C1 E2 (A)A13/97 Mod-E/ 13.Jan 1998 G.SchulzeFD 600 R 12 KF 4Hchstzulssige Werte / Maximum rated values

Technische Information / technical informationIGBT-ModuleF4-100R06KL4IGBT-modulesVorlufige Datenpreliminary dataIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 65C I 100 ADC-collector current T = 25C I 130 APeriodischer Kollekto

Technische Information / technical informationIGBT-ModuleF4-200R06KL4IGBT-modulesVorlufige Datenpreliminary dataIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 45C I 200 ADC-collector current T = 25C I 225 APeriodischer Kollekto

Technische Information / technical informationIGBT-ModuleF4-25R12NS4IGBT-modulesEconoPACK1 mit schnellem IGBT2 fr hochfrequentes Schalten als H-Brckenkonfiguration EconoPACK1 module with fast IGBT2 for high switching frequency as H-bridge configuration IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated values

European Power-Semiconductor andElectronics CompanyMarketing InformationFD 600 R 16 KF455,211,85M8screwing depthmax. 813031,5114E1 C2C1 E2E1 E2C1 C2G1 G216 187M440 44282,5 deep2,5 deepscrewing depth53 57max. 8E1 C2 (K)E1G1C1C1 E2 (A)VWK Apr. 1997IGBT-Module FD 600 R 16 KF4Hchstzulssige Werte / Maximum rated valuesElekt

IRF450Data Sheet March 1999 File Number 1827.313A, 500V, 0.400 Ohm, N-Channel FeaturesPower MOSFET 13A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 0.400effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode

FRF450D, FRF450R,FRF450H9A, 500V, 0.615 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 9A, 500V, RDS(on) = 0.615TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

FSF450D, FSF450R9A, 500V, 0.600 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 9A, 500V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

IRF430Data Sheet March 1999 File Number 1572.44.5A, 500V, 1.500 Ohm, N-Channel FeaturesPower MOSFET 4.5A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 1.500effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mo

MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a highpower linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 150 W (PEP)

MRF448 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 250W, 30MHz, 50V Designed primarily for highvoltage applications as a highpower Product Image linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45

MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. Specified 28 V, 30 MHz characteristics Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% Intermodulation distortion @ 2

MRF455 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 60W, 30MHz, 12.5V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 60 W Minimum gain = 13 dB Efficiency = 55% CASE 21107, STYLE 1 1 ADVAN

MRF454 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 80W, 30MHz, 12.5V Designed for power amplifier applications in industrial, commercial and Product Image amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 80 W Minimum gain = 12 dB Efficiency = 50% CASE 21111, STYLE 1 1 ADV

SSRF4N60 4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION ITO-220 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without B Ndegrading performance over time. This

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17381F4SLPS411D APRIL 2013 REVISED OCTOBER 2014CSD17381F4 30 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Threshold VoltageQg Gate Charge Total (4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23381F4SLPS450E OCTOBER 2013 REVISED MAY 2015CSD23381F4 12 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 12 V High Operating Drain CurrentQg Gate Charg

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13383F4SLPS517 DECEMBER 2014CSD13383F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Charge Total (4.5 V) 2.0 n

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17483F4SLPS447C JULY 2013 REVISED OCTOBER 2014CSD17483F4 30 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1010 p

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17484F4SLPS550 MAY 2015CSD17484F4 30 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 920 pC Ultra-Small Fo

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25481F4SLPS420D SEPTEMBER 2013 REVISED OCTOBER 2014CSD25481F4 20 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 20 V High Operating Drain CurrentQg Gate

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD13381F4SLPS448D JULY 2013 REVISED MAY 2015CSD13381F4 12 V N-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Low Qg and QgdVDS Drain-to-Source Voltage 12 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1060 pC

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25483F4SLPS449D OCTOBER 2013 REVISED OCTOBER 2014CSD25483F4 20 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 20 V High Operating Drain CurrentQg Gate C

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25484F4SLPS551 MAY 2015CSD25484F4 20 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 20 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1090 pC Ultr

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23382F4SLPS453C MAY 2014REVISED OCTOBER 2014CSD23382F4 12 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Cha

Product Data SheetDecember 16, 2002DC - 12 GHz Discrete HFET TGF4230-SCCKey Features and Performance Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 m HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x0.004 in) Bias at 8 Volts, 96 mAPrimary Applications Cellular Base Stations High dynamic-rang

TGF4118-EPU 18 mm Discrete HFET4118February 23,2001 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils(0.914 x 2.057 x 0.102 mm)TGF4118-EPU RF Performance at F = 2.3 GHzVd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and TA = 25C50 55Pout48PAE5046

TGF4124-EPU 24 mm Discrete HFET 4124 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils(0.914 x 2.057 x 0.102 mm)TGF4124-EPU RF Performance at F = 2.3 GHzVd = 8.0 V, Vg = -1.1 V, Iq = 2.17 A and TA = 25C50 55Pout 48 50PAE46 4544 4042 3

Product Data SheetMarch 31, 20039.6 mm Discrete HFET TGF4260-SCCKey Features and Performance 9600 m x 0.5 m HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz Suitable for high reliability applications 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)Primary Applications Ce

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP PLASTIC POWER TRANSISTORSBF470, 472TO126 Plastic PackageECBComplementary BF469, 471Video Applications in TVABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 470 472 UNITSVCBOCollector Base Voltage(open emitter) >250 >300 VCollector Emitter Vol

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF421VIDEO TRANSISTORS BF423TO-92Plastic PackageHigh Voltage Video AmplifierABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 423 421 UNITSVCEOCollector Emitter Voltage 250 300 VVCBOCollector Base Voltage 250 300

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS BF457, 458, 459TO126 Plastic PackageECBVideo Output Stages of TV Sets , for AF Output Stages with a High OperatingVoltage and as Driver Transistors in Horizontal Deflection Circuit Aplications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER TRANSISTORS CJF44H11 NPN CJF45H11 PNPTO-220FP Fully IsolatedPlastic Packagepose Power Amplification and Switching such as Output or Driver StagesGeneral Purin ApplicationsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 80 VEmi

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494BF495TO-92Plastic PackageHigh Voltage Video TransistorsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL Value UNITSVCEOCollector Emitter Voltage 20 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Vol

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORSBF 469, BF471TO126 Plastic PackageECBComplementary BF470, 472Video Applications in TVABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 469 471 UNITSVCBOCollector Base Voltage(open emitter) >250 >300 VCollector Emitt

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422(BPL)TO-92BCEDesigned for High Voltage Video Amplifier in Television Receivers.ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )DESCRIPTION SYMBOL VALUE UNITSCollector -Base Voltage VCBO 250 VCollector -Emitter Voltage VCEO 250 VEmitter -Base Voltage V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF420VIDEO TRANSISTORS BF422TO-92Plastic PackageDesigned For High Voltage Video Amplifier In Television Receivers.ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 420 422 UNITSCollector Emitter Voltage VCEO 300 250 V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF421 TRANSISTOR (PNP)TO-92 BF423 1. EMITTER FEATURES Low Feedback Capacitance. 2.COLLECTOR PNP Transistors in a TO-92 Plastic Package.3. BASE NPN Complements: BF420 and BF422 Class-B Video Output Stages in ColourTelevision and Professional Monitor Equipment. Equivalent Ci

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF420 TRANSISTOR (NPN)BF422 TO-92 FEA TURES1. EMITTER Low feedback capacitance.2.COLLECTOR NPN transistors in a TO-92 plastic package.PNP complements: BF421 and BF4233. BASE Class-B video output stages in colourtelevision and professional monitor equipment. Equivalent Ci

KF4N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF4N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode power supp

KF4N65FMSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

KF4N20LD/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF4N20LDThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for LED Lighting and C D_A 6.60 + 0.20_B 6.10 + 0.20switching m

SEMICONDUCTOR BF422TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPEHIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS.B CFEATURES High Voltage : VCEO>250VComplementary to BF423.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_

SEMICONDUCTOR BF423TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPEHIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS.B CFEATURES High Voltage : VCEO>-300VComplementary to BF422.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_

SEMICONDUCTORKGF40N60KDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T

KF4N20LWSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for LED Lighting andswitching mode power supplies.FEATURES VDSS(Min.)= 200V, ID= 1ADrain-Source ON

SEMICONDUCTORKGF40N120KDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtre

KF4N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSswitching mode power supplies. _A 10.16 0.2+_B 15.8

KF4N65P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF4N65PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection and switching mode power suppli

SEMICONDUCTOR BF420TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPEHIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS.B CFEATURES High Voltage : VCEO>300VComplementary to BF421.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_

SEMICONDUCTORKGF40N65KDCTECHNICAL DATAGeneral DescriptionBKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency AOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20FEATURES _C20.85 + 0.30_D3.00

SEMICONDUCTOR BF421TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPEHIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS.B CFEATURES High Voltage : VCEO>-300VComplementary to BF420.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_

SEMICONDUCTORKGF40N60PATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10us(@TC=100

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2563Case : E-packCase : FTO-220(Unit : mm)(F4F60VX2)600V4AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching po

P we MOS Eo r F T O T IEU LNUntmmiP cae O-PakgMT 3F 7 0 34W6C 6 0 70 V4A 0000 47W60C3F aueetrL wRoONFsS tat wihncig

BF420/BF422(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. NPN transistors in a TO-92 plastic package. PNP complements: BF421 and BF423 Class-B video output stages in colour television and professional monitor equipment. Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise not

BF421/BF423(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. PNP transistors in a TO-92 plastic package. NPN complements: BF420 and BF422 Class-B video output stages in colour television and professional monitor equipment. Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted)

WPT2F42 WPT2F42Single, PNP, -30V, -3A, Power Transistor Http//:www.willsemi.com DescriptionsThe WPT2F42 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and other power management. Standard Products WPT2F42 are SOT-23-6L Pb-free and Halogen-free.C 1 6 C C 2 5 C 3 4 E B FeaturesPin configuration (T

Spec. No. : HE6404HI-SINCERITYIssued Date : 1993.03.18Revised Date : 2004.06.18MICROELECTRONICS CORP.Page No. : 1/4HBF422NPN EPITAXIAL PLANAR TRANSISTORDescription Video B-class Power stages in TV-receiversTO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ............................................................................................

Spec. No. : HE6403HI-SINCERITYIssued Date : 1993.03.18Revised Date : 2003.06.18MICROELECTRONICS CORP.Page No. : 1/4HBF423PNP EPITAXIAL PLANAR TRANSISTORDescriptionVideo B-class Power stages in TV-receiversTO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .............................................................................................

AOTF4126100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOTF4126 is fabricated with SDMOSTM trench ID (at VGS=10V) 27Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

AOT4S60/AOB4S60/AOTF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT4S60 & AOB4S60 & AOTF4S60 have beenfabricated using the advanced MOSTM high voltage IDM 16Aprocess that is designed to deliver high levels of RDS(ON),max 0.9performance and robustness in switching applications. Qg,typ 6nCBy providing low RDS

AOT474/AOTF47475V N-Channel MOSFET General Description Product SummaryThe AOT474 and AOTF474 use a robust technology that 75VVDSis designed to provide efficient and reliable power 127A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 47A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOTF42S60 have been fabricated using the IDM 166Aadvanced MOSTM high voltage process that is designedto deliver high levels of performance and robustness in RDS(ON),max 0.099switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along wit

AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOTF42S60 have been fabricated using the IDM 166Aadvanced MOSTM high voltage process that is designedto deliver high levels of performance and robustness in RDS(ON),max 0.099switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS along wit

AOW4S60/AOWF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW4S60 & AOWF4S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 16Adesigned to deliver high levels of performance and RDS(ON),max 0.9robustness in switching applications. Qg,typ 6nCBy providing low RDS(on), Qg and EOSS

AOTF4T60P600V,4A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 16A Low Ciss and Crss RDS(ON),max

AOWF412100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 100VThe AOWF412 are fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 30Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

AOWF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOWF4N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOTF404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOTF404/L uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate charge. ID = 26 A (VGS =10V)This device is suitable for use in high voltage RDS(ON)

AOTF4N90900V,4A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF4N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOTF450L200V, 5.8A N-Channel MOSFETGeneral Description Product SummaryThe AOTF450L is fabricated using an advanced high VDS 250V@150voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 5.8Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOTF454L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOTF454L combines advanced trench MOSFET 150V13Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON).This device is ideal for boost

AOT4N60/AOTF4N60/AOTF4N60L600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 & AOTF4N60L have beenfabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4Athat is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOTF409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate VDS (V) =-60Vresistance. With the excellent thermal resistance of the (VGS = -10V)ID = -24ATO220FL package, this device is well suited for high (VGS = -10V)RDS(ON)

AOT4N60/AOTF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOTF418540V P-Channel MOSFETGeneral Description Product SummaryVDS-40VThe AOTF4185 combines advanced trench MOSFET -40V technology with a low resistance package to provide ID (at VGS=-10V) -34Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AOT472/AOTF47275V N-Channel MOSFETGeneral Description Product SummaryThe AOT472 and AOTF472 use a robust technology that 75VVDSis designed to provide efficient and reliable power 140A ID (TO220 at VGS=10V)conversion even in the most demanding applications, 53A ID (TO220FL at VGS=10V)including motor control. With low RDS(ON) and excellent

SFF44N50S1 Solid State Devices, Inc. SFF44N50S2 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 35 AMP, 500 Volts, 110 m SMD1, 2 Avalanche Rated N-channel MOSFET Features: Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated

SFF40N30M Solid State Devices, Inc. SFF40N30Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 40 AMP , 300 Volts, 50 m Part Number / Ordering Information 1/ Avalanche Rated N-channel SFF40N30 ___ ___ ___ Screening 2/ MOSFET __ = Not Screened

SFF450M SFF450Z Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 13 AMP / 500 Volts Part Number / Ordering Information 1/ 0.4 SFF450 __ __ __ N-Channel POWER MOSFET Screening 2/ __ = Not Screen TX = TX Level

SFF440J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 8 AMP DESIGNERS DATA SHEET N-Channel Part Number / Ordering Information1/ Power MOSFET 500 Volts SFF440 ___ ____ 0.86 Screening2/ __ = Not Screened TX = TX Level Features:

SFF44N50M Solid State Devices, Inc. SFF44N50Z 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 25 AMP , 500 Volts, 110 m Avalanche Rated N-channel TO-254 TO-254Z MOSFET Features: Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANNEL POWER MOSFET SIF4N60CN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANNEL POWER MOSFET SIF4N60DN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N80CN- MOS / N-CHANNEL POWER MOSFET SIF4N80CN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N70CN- MOS / N-CHANNEL POWER MOSFET SIF4N70CN

Spec. No. : C235A3 Issued Date : 2004.02.24 CYStech Electronics Corp.Revised Date : 2014.04.01 Page No. : 1/5 PNP Epitaxial Planar Transistor BF423A3Description PNP high voltage transistors in a TO-92 plastic package. Complementary to BF422A3 Pb-free lead plating package Features Low feedback capacitance. Applications Class-B video output stages

Spec. No. : C234A3 Issued Date : 2004.02.27 CYStech Electronics Corp. Revised Date : 2004.07.28 Page No. : 1/4 NPN Epitaxial Planar Transistor BF422A3Description NPN high voltage transistors in a TO-92 plastic package. Complementary to BF423A3. Features Low feedback capacitance. Applications Class-B video output stages in color television and professio

GreenProductSTF443aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.47 @ VGS=-4.5VSuface Mount Package.48 @ VGS=-4.0V -20V -4.5A 50 @ VGS=-3.7V ESD Protected.56 @ VGS=-3.1V64 @ VGS=-2.5VD P IN 1DDGG

GreenProductSTF445aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.29 @ VGS=-4.5VSuface Mount Package.30 @ VGS=-4.0V -20V -5.6A 32 @ VGS=-3.7V ESD Protected.36 @ VGS=-3.1V43 @ VGS=-2.5VD P IN 1DDGG

SSF4624 DESCRIPTION The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 40V,ID =6A RDS(ON)

SSF4032CH3Main Product Characteristics:NMOS PMOSVDSS 40V -40VRDS(on) 16mohm(typ.) 25mohm(typ.)ID 6A -4.5ASOP-8 Schematic diagramBottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and general purpose applications Ultra low on-resistance with low gate charge 1

SSF4015 Main Product Characteristics: DVDSS -40V SSF3612DSSF3612DSSF4015SSF4035 G RDS(on) 11m (typ.) ID -40A STO-252 (D-PAK) Marking a nd p in S che mati c di agra m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low g

SSF47NS60H Main Product Characteristics: VDSS 600V RDS(on) 0.059ohm(typ.) ID 47A TO247 Schema t ic diagr am Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF47NS60H series MOSFETs is a new technologywhich combines an innovative su

SSF4414 DDESCRIPTION The SSF4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES V = 30V,I = 8.5A DS DR

SSF4N60G Main Product Characteristics: VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)

SSF4703DCDESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)

SSF4N60D Main Product Characteristics: VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4NS60D Main Product Characteristics: VDSS 600V RDS(on) 1.1 (typ.) ID 4A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF4NS60D series MOSFETs is a new te

SSF4004S Main Product Characteristics VDSS 40V RDS(on) 2.3m (typ.) ID 180A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4607D Main Product Characteristics: DVDSS -30V G RDS(on) 19m(typ.) SID -25A TO-252 Marking and pin Schematic diagram Ass ig nme nt Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse

SSF4606 DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES N-Channel VDS = 30V,ID = 6.9A RDS(ON)

SSF4004 Feathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF4004 is a new generation of high voltage and low current NChannel en

SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES D1 D1 D2 D2N-Channel 8 7 6 5VDS = 30V,ID = 6.9A RDS(ON)

SSF4031C1Main Product Characteristics:V -40VDSSR (on) 24mohm(typ.)DSI -30ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 100%Ava

SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4953D1D2DESCRIPTION The SSF4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2Schematic diagram GENERAL FEATURES D1 D1 D2 D2VDS = -30V,ID = -5.3A 7 6 58RDS(ON)

SSF4203 Main Product Characteristics: VDSS 40V RDS(on) 3mohm(typ.) ID 180A S che mati c di agra m TO220 Marking a nd p in Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage NChannel enhancement mode

BRF4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficien

BRF4N60(BRCS4N60F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

BRF4N80(BRCS4N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. / Applications

RoHS IRF450 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET14A, 500VoltsDESCRIPTIOND The Nell IRF450 is a three-terminal silicon devicewith current conduction capability of 14A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

RoHS IRF4410 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(97A, 100Volts)DESCRIPTION The Nell IRF4410 is a three-terminal silicon Ddevice with current conduction capability of 97A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 100V ,and max. threshold voltage of 4 volts.G They are designed for use in application

RoHS IRF460 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET20A, 500VoltsDESCRIPTIOND The Nell IRF460 is a three-terminal silicon devicewith current conduction capability of 20A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

SMD Type TransistorsSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKRF4905STO-263Unit: mm4.57+0.2-0.2Features +0.11.27-0.1Advanced Process TechnologySurface Mount175 Operating Temperature+0.1Fast Switching 0.1max1.27-0.1P-Channel0.81+0.1-0.1Fully Avalanche Rated2

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

SVF4N70F/D 4A700V N 2SVF4N70F/D N MOS F-CellTM VDMOS 13

SVF4N65F/M/MJ/D 4A650V N 2SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS 1 31. 2.

SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

SVF4N60CAF/K/D/T/MN/MJ 4A600V N 2 SVF4N60CAF/K/D/T/MN/MJ N MOS 13 F-CellTM VDMOS 1TO-252-2L3

SVF4N65RD/M/MJ/F/T 4A650V N 2SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 113TO-252-2L3

SVF4N65CAF/D/M/MJ 4A650V N 2SVF4N65CAF/D/M/MJ N MOS F-CellTM VDMOS 13

SVF4N60CAF/K/D/T/MN/MJ 4A600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS

SVF4N70MJ 4A700V N 2SVF4N70MJ N MOS F-CellTM VDMOS 13

SVF4N65CAF/D/M/MJ/MN/K 4A650V N 2SVF4N65CAF/D/M/MJ/MN/K N MOS 1 F-CellTM VDMOS 3 1. 2. 3

SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS

SVF4N65CAF/D/M/MJ/MN/K 4A650V N 2SVF4N65CAF/D/M/MJ/MN/K N MOS F-CellTM VDMOS 1 31.

SVF4N65CAFJH 4A650V N 2SVF4N65CAFJH N MOS F-CellTM VDMOS 1 3

SVF4N60CAFJ 4A600V N 2SVF4N60CAFJ N MOS 1 F-CellTM VDMOS 3 1. 2.

SVF4N60RD(M) 4A600V N SVF4N60RD(M) N MOS F-CellTM VDMOS AC-DC

SVF4N65CF/MJ 4A650V N 2SVF4N65CF/MJ N MOS F-CellTM VDMOS 1 3

SVF4N65RD/M/MJ/F/T 4A650V N 2SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 113TO-252-2L3

SVF4N65T/F/M/MJ/D/K 4A650V N 2SVF4N65T/F/M/MJ/D/K N MOS 123 F-CellTM VDMOS TO-251J-3L13

SVF4N150PF(P7)(F) 4A1500V N 2 SVF4N150PF(P7)(F) N MOS 112 F-CellTM VDMOS 3TO-220F-3L31. 2.

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable

MSF4N65 650V N-Channel MOSFET Description The MSF4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

MSF4N60 MSF4N60 600V N-Channel MOSFET General Description The MSF4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

SFF4N60SFF4N60SFF4N60SFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.2)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

WFF4N60WFF4N60WFF4N60WFF4N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V,R (Max 2.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

PPJU4NA70 / PJD4NA70 / PJP4NA70 / PJF4NA70 700V N-Channel MOSFET 700 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A

PPJU4NA60 / PJD4NA60 / PJP4NA60 / PJF4NA60 600V N-Channel MOSFET 600 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A

PPJU4NA65 / PJD4NA65 / PJP4NA65 / PJF4NA65 650V N-Channel MOSFET 650 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A

PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 900V N-Channel MOSFET 900 V 4 A Voltage Current Features RDS(ON), VGS@10V,ID@2A

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHUMF4GPPower Management (Dual Transistor)Tr1:VOLTAGE 12 Volts CURRENT 0.5 AmpereDTr2:VOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Power management circuitFEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* Power switching circuit in a single package.* Mounting cost and area can be cut in half.* Both the 2SA201

ELEFLOW TECHNOLOGIES MRF427/MRF427Awww.eleflow.com NPN Silicon RF power transistor MRF427 / MRF427A Description: MRF427/MRF427A is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30MHz. Idea for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 25 W (PEP), Minimum Gain = 18 dB

ELEFLOW TECHNOLOGIES MRF448www.eleflow.com NPN Silicon RF power transistor MRF448 Description: MRF448 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 250 W, Minimum Gain = 1, Efficiency = 45% Maximum Rat

ELEFLOW TECHNOLOGIES MRF466www.eleflow.com NPN Silicon RF power transistor MRF466 Description: MRF466 is designed primarily for applications as a highpower linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. 2N5941 Replacement. Features: Specified 28 Volt, 30 MHz Characteristics: Output Power = 40 W (PEP) or CW, Minimum Gain =

ELEFLOW TECHNOLOGIES MRF486www.eleflow.com NPN Silicon RF power transistor MRF486 1ELEFLOW TECHNOLOGIES MRF486www.eleflow.com 2

ELEFLOW TECHNOLOGIES MRF410www.eleflow.com NPN Bipolar RF power transistor MRF410 Description: MRF410 is designed primarily for HF, VHF, UHF, 800MHz, and Microwave applications in military and commercial land mobile, avionics, and marine transmitters. Features: 1.5-30MHz, HF/SSB Transistors. Designed for broadband operation, these devices feature specified intermodulation dist

ELEFLOW TECHNOLOGIES MRF477www.eleflow.com NPN Silicon RF power transistor MRF477 1ELEFLOW TECHNOLOGIES MRF477www.eleflow.com 2

ELEFLOW TECHNOLOGIES MRF412www.eleflow.com NPN Silicon RF power transistor MRF412 Description: MRF412 is designed primarily for applications as a high power amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment where superior ruggedness is required. Features: Specified 13.6V, 30MHz characteristics: Pout: 70W PEP or CW, Min Gpe: 13dB, Effici

ELEFLOW TECHNOLOGIES MRF429www.eleflow.com NPN Silicon RF power transistor MRF429 Description: MRF429 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% M

N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

N N-CHANNEL MOSFET FHS150N1F4A MAIN CHARACTERISTICS FEATURES ID 160 A Low gate charge VDSS 100 V Crss ( 200pF) Low Crss (typical 200pF ) Rdson-typ @Vgs=10V 4.2 m Fast switching Qg-typ 100nC 100% 100% avalanche tested dv/dt Impr

N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

N N-CHANNEL MOSFET FHF4N90A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 900V Crss ( 7.4pF) Low Crss (typical 7.4pF ) Rdson-typ @Vgs=10V 2.6 Fast switching Qg-typ 25.2nC 100% 100% avalanche tested dv/dt Improved dv/

N N-CHANNEL MOSFET FHU4N65B/FHP4N65B/FHD4N65B/FHF4N65B MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv

HG RF POWER TRANSISTORMRF449ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF449ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19

HG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19

HG RF POWER TRANSISTORMRF492SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 volt low band VHF largesignal power amplifier applica-tions in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics Output Power = 70 WMinimum Gain = 11 dBEfficiency = 50% Load Mismatch Capability at High Line and RF OverdriveMAX

HG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19

4A650VN-CHANNELMOSFET4365AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R ,typ.=2.0 @V =10V,I =2ADS(ON) GS D Fast Switching 100%avalanchetested Improveddv/dt capability2. Application High frequency switching mode power supply Uninterruptible Power Supply(UPS) Electronic ballast3. PinconfigurationPin Function1 Gate2 Drain3 Source

7A650VN-CHANNELMOSFETKNX4665BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionTheKNX4665B-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology2. Featur

6A400VKNX4540AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features RoHSCompliant R =0.8@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications Adaptor Charger SMPSStandby Power3. PinconfigurationPin Function1 Gate2 Drain3 Source4 Drain1of 8 Rev 1.0Aug. 20186A4

7A600VN-CHANNELMOSFETKNX4660AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionTheKNX4660A-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage,high speed power switching applications such as high efficiency switched mode power supplies, activepower factor correction, electronic lamp ballasts based on half bridge topology.2. Featu

4.0A600VN-CHANNELMOSFET4360AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =1.9(typ.)@V =10V, I 2ADS(ON) GS D= Fast switching 100% avalanchetested Improveddv/dt capability2. Application High frequency switching mode power supply Uninterruptible Power Supply(UPS) Electronic ballast3. PinconfigurationPin Function1 Gate2 Drain3 Sour

7.5A650VN-CHANNELMOSFET4665AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. General DescriptionThis Power MOSFETis producedusing KIAs advanced planar stripeDMOStechnology. This advancedtechnology has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutationmod

SLP40N26C / SLF40N26CSLP40N26C / SLF40N26C260V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 40A, 260V, RDS(on) typ. = 0.12@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 55 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior s

NCE60NF420DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60NF420KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60NF420IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60NF420FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and ind

NCE60NF420N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 380 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.7 nCpower conversion, and indu

SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS : 650V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.10)@VGS=10V RDS(ON) : 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application:LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D N-channel Enhanced mode TO-251/TO-251N/TO-252/TO-220F MOSFET Features BVDSS : 700V TO-251 TO-251N TO-252 TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.3)@VGS=10V RDS(ON) : 2.3 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Charger,LED 1 1 2 2 2 2 3 3 3 3 1 1. Gate 2.

SW4N70D1N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2/TO-220F MOSFETFeatures TO-220FTO-251S TO-251N TO-251N-S2BVDSS : 700VID : 4A High ruggedness Low RDS(ON) (Typ 2.1)@VGS=10VRDS(ON) : 2.1 Low Gate Charge (Typ 18nC) Improved dv/dt Capability 2 100% Avalanche Tested111 1222 2 Application:Adapter,LED,Charger 333 311. Gate

SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) :1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application:Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 600V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V RDS(ON) : 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

SW4N60DN-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFETFeaturesBVDSS : 600VTO-251S TO-251M TO-252TO-220F TO-220FT TO-251ID : 4A High ruggedness Low RDS(ON) (Typ 1.9)RDS(ON) : 1.9@VGS=10V Low Gate Charge (Typ 18nC)111 121 212 2 23 Improved dv/dt Capability 2 33 2333 100% Avalanche Tested Application:A

SW4N70K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS :700V TO-220F TO-251N TO-252 ID : 4 A High ruggedness Low RDS(ON) (Typ 1.15)@VGS=10V RDS(ON) :1.15 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, Adaptor 3 3 3 1 1. Gate 2. Drain 3. S

SW4N80D N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 800V ID : 4A High ruggedness Low RDS(ON) (Typ 3.2)@VGS=10V RDS(ON) : 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adaptor, LED, Industrial Power 3 3 3 1 1. Gate 2.

SW4N70L N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V ID : 4A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 18nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 3 1 3 3 Application: LED,Charge, Adaptor 1. Gate 2. Drain 3. Sour

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ3.35)@VGS=10V RDS(ON) : 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

SW4N50K N-channel Enhanced mode TO-251N/TO-252/TO-220F MOSFET Features TO-251N TO-252 TO-220F BVDSS : 500V ID : 4A High ruggedness Low RDS(ON) (Typ 0.76)@VGS=10V RDS(ON) : 0.76 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application:Charger, Adaptor, LED 3 3 3 1. Gate 2. Drain 3. S

SW4N100U N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 1000V TO-220F ID : 4A High ruggedness Low RDS(ON) (Typ 2.65)@VGS=10V RDS(ON) : 2.65 Low Gate Charge (Typ 33nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED, Adaptor 1 1. Gate 2. Drain 3. Source 3 General Description This pow

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2.4)@VGS=10V RDS(ON) : 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

SW4N65DAN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFETFeaturesBVDSS : 650VTO-220F TO-251N TO-252 TO-251NX-S4ID : 4A High ruggedness Low RDS(ON) (Typ 3.35)@VGS=10VRDS(ON) :3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D1 100% Avalanche Tested 1 1122 223 Application: Charger, Adaptor, 333LED, TV-Pow

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d

SW4N70K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 700V High ruggedness ID : 4A Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED, Adaptor 3 3 3 1. Gate 2. Drain 3. Source 1 3 G

SW4N80K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-252 TO-220F BVDSS : 800V ID : 4A High ruggedness Low RDS(ON) (Typ 1.8)@VGS=10V RDS(ON) : 1.8 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 Application: LED, Charger, Adaptor 3 3 3 1. Gate 2. Drain 3. Source

SW4N80DN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-262N MOSFETFeaturesTO-220F TO-251N TO-252 TO-262NBVDSS : 800V High ruggednessID : 4A Low RDS(ON) (Typ 3.2)@VGS=10VRDS(ON) : 3.2 Low Gate Charge (Typ 19nC) Improved dv/dt Capability 100% Avalanche Tested 21 11 12 2 Application:Adaptor, LED, 2 23 33 3Industrial Power11. Gate 2

SEMITRONICS CORP. SEF401002 64 Commercial Street, Freeport, N.Y. 11520 POWER MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Fast Switching Low RDS(on) 0.025 Ohms High Current & High Power MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE OUT

SEMITRONICS CORP. SEF40604 64 Commercial Street, Freeport, N.Y. 11520 POWER MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package High dv.dt Low RDS(on) 0.35 Ohms Eutectic Die Attachment for Hi Reliability MIL STX Screening Available APPLICATIONS High Reliability Power Supplies

SHD225502SENSITRON SEMICONDUCTORTECHNICAL DATADATA SHEET 223, REV AFormer part number SHD2259HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, .07 Ohm, 30A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM150MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGAT

SENSITRON SHD225402SEMICONDUCTORTECHNICAL DATADATA SHEET 746, REV. -HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 0.077 Ohm, 28A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFM140 Series Add Suffix C to the Part Number for Ceramic SealsMAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED

TMP4N90/TMPF4N90TMP4N90G/TMPF4N90GVDSS = 990 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 4.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkTMP4N90 / TMPF4N90 TO-220 / TO-220F TMP4N90 / TMPF4N90 RoHSTMP4N90G / TMPF4N90G TO-220 / T

TMP4N60/TMPF4N60 TMP4N60G/TMPF4N60G VDSS = 660 V @Tjmax Features ID = 4A Low gate charge RDS(on) = 2.55 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N60 / TMPF4N60 TO-220 / TO-220F TMP4N60 / TMPF4N60 RoHS TMP4N60G / TMPF4

TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

TMP4N60AZ(G)/TMPF4N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

TGAF40N60F2DField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationApplicationsG C EUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAF40N60F2D TO-3PF TGAF40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbol Val

TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 3.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N80 TO-220 TMP4N80 RoHS TMPF4N80G TO-220F TMPF4N80G Halogen Free Absol

TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A

TSP4N60M/TSF4N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.0A,600V,Max.RDS(on)=2.5 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

TSF4N90M900V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis Drain-Source breakdown voltage:advanced planar stripe DMOS technology.BVDSS=900V (Min.)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge: Qg=22nC (Typ.)performance, and withstand high

SMF4N65650V N-Channnel MOSFETFeatures 4.0A, 650V, R =2.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

SMF4N60600V N-Channnel MOSFETFeatures 4.0A, 600V, R =2.1@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

LNC4N65\LND4N65\LNG4N65\LNH4N65\LNF4N65 Lonten N-channel 650V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.70 superior switching performance and high Qg,typ 12 nC avalance energy. Features Low RDS(on) Low gate

PTP4 N60/PTF4 N60600V/4 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D S G D STO-220 TO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio

PTP4 N65 /PTF4 N6565 0V/4 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 2.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D S G D STO-220 TO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct

WSF40P03 P-Ch MOSFETGeneral Description Product SummeryThe WSF40P03 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and-30V 18m -40Agate charge for most of the small power switching and load switch applications. Applications The WSF40P03 meet the RoHS and GreenProduct requirement with full fun

WSF40P04 P-Ch MOSFETGeneral Description Product SummeryThe WSF40P04 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -40V 32m -20Agate charge for most of the synchronous buck converter applications . Applications The WSF40P04 meet the RoHS and Green High Frequency Point-of-Load Synchro

WSF4012N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSF4012 is the highest performance trench N-ch BVDSS RDSON ID and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for 40V 16m 30Amost of the synchronous buck converter applications . -40V 30m -20AThe WSF4012 meet the RoHS and Green Product requirement 1

WSF4060 N-Ch MOSFETGeneral Description Product SummeryThe WSF4060 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with 40V 7.2mextreme high cell density , which provide 60Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSF4060 meet the RoHS and Green Product requirement , 100% EAS High Freque

WSF45P06P-Ch MOSFETGeneral Description Product SummeryThe WSF45P06 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge -60V 40m -45Afor most of the synchronous buck converter applications . Applications The WSF45P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed

WSF40N10A N-Ch MOSFETGeneral Description Product SummeryThe WSF40N10A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 42m 31Agate charge for most of the synchronous buck converter applications . Applications The WSF40N10A meet the RoHS and Green High Frequency Point-of-Load Synchron

WSF40P06P-Ch MOSFETGeneral Description Product SummeryThe WSF40P06 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 62m -17Agate charge for most of the synchronous buck converter applications . Applications The WSF40P06 meet the RoHS and Green Product requirement , 100% EAS Brushles

WSF45P10 P-Ch MOSFETGeneral Description Product SummeryThe WSF45P10 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 44m -40Agate charge for most of the small power switching and load switch applications. Applications The WSF45P10 meet the RoHS and Green Product requirement with ful

WSF40N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF40N06 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 60V 20m 50Afor most of the synchronous buck converter applications . Applications The WSF40N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous

WSF4042N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSF4042 is the highest performance trench N-ch BVDSS RDSON ID and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for 40V 14m 20Amost of the synchronous buck converter -40V 16m -20Aapplications . The WSF4042 meet the RoHS and Green Product requirement 1

WSF40N10 N-Ch MOSFETGeneral Description Product SummeryThe WSF40N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 32m 40Afor most of the synchronous buck converter applications . Applications The WSF40N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

WSF4022Dual N-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON IDThe WSF4022 is the highest performance trench 40V 21m 20ADual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter Applications applications . For Fan Pre-driver H-Bridge.The WSF4022 meet the RoHS and Green Product Moto

SMIRF4N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8(VGS=10V, ID=2A) on-state resistance, provide superior swi

PMF400UNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC

IRF4905PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

GF4435www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

AF4502CSLAwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at V

STP90N55F4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

IRF4435TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

KWRFF40R12SWM1200V 40A IGBT IGBT100% RBSOA2*ICVCE=1.96V (Eoff=1.28mJ)IGBT()T =25j V 1200-

KWBW60N65F4EG650V 60A IGBTTO-247ECG1 V650 V-CET =25 I100C CT =

isc Silicon NPN Power Transistors MJF44H11DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 8ACE(sat) CFast Switching SpeedsComplement to Type MJF45H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applicat

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF405AFI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Co

isc N-Channel MOSFET Transistor STF45N65M5FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc N-Channel MOSFET Transistor AOTF4126FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

INCHANGE Semiconductor isc Product Specificationisc Silicon PNP Power Transistor BF470/BF472DESCRIPTIONPNP transistors in a to-126 packageNPN complements BF469 and BF471Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for class-B video output stages in televisionReceivers and for high-voltage IF output stagesABSOLU

isc N-Channel MOSFET Transistor AOTF4S60FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF40B207IIRF40B207FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

isc Silicon NPN Power Transistor BUF420IDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor AOTF474FEATURESDrain Current I = 47A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 11.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc Silicon NPN Power Transistor BUF405ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high reliability industrial and professionalpower driving applications such as motor drivers andoff-line

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor FDPF4D5N10CFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF405AXI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Co

isc Silicon NPN Power Transistor BUF420ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor AOTF42S60FEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

isc N-Channel MOSFET Transistor AOTF42S60LFEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 99m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF430DESCRIPTIONsilicon Gate for fast switching at elevateruggedlow drive requirementsease of parallelingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications such asSwitching power supplies,AC and DCmotor controlsrelay and solenoid driver.A

isc N-Channel MOSFET Transistor ISF40NF20DESCRIPTIONDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.06(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage, high spee

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Vo

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF400N80ZCNFEATURES Drain-source on-resistance:RDS(on) 0.4@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC Power SupplyLED LightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BF469/BF471DESCRIPTIONNPN transistors in a to-126 packagePNP complements BF470 and BF472Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended for class-B video output stages in televisionReceivers and for high-voltage IF output stagesABSOLU

isc N-Channel MOSFET Transistor FCPF400N60FEATURESWith TO-220F packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 400m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

isc N-Channel MOSFET Transistor YTF440FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL

isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

isc Silicon NPN Power Transistor BUF420DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor BUF405AFPDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high reliability industrial and professionalpower driving applications such as motor drivers andoff-li

isc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive Requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamp

isc Silicon NPN Power Transistor BUF420MDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor AOTF404FEATURESDrain Current I = 26A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor AOTF4N90FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =3.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION High Voltage High Speed Switching APPLICATIONS Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Volt

isc Silicon NPN Power Transistor BUF405AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high reliability industrial and professionalpower driving applications such as motor drivers andoff-lin

Isc N-Channel MOSFET Transistor IRF4104SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

isc N-Channel MOSFET Transistor YTF450FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R =0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL

isc N-Channel MOSFET Transistor AOTF450LFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.265(TYPE)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF4104IIRF4104FEATURESStatic drain-source on-resistance:RDS(on) 5.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

isc N-Channel MOSFET Transistor AOTF454LFEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R =94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF441FEATURESV Rated at 20VGSSilicon Gate for Fast Switching SpeedsI ,V ,SOA and V specified at ElevatedDSS DS(on) GS(th)temperatureRuggedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as

isc N-Channel MOSFET Transistor UF450FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-So

isc Silicon PNP Power Transistors MJF45H11DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -8ACE(sat) CFast Switching SpeedsComplement to Type MJF44H11Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applic

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOTF409FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor BUF410AIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF4N60FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor BUF410IDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-frequency power supplies andmotor control applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc P-Channel MOSFET Transistor AOTF4185FEATURESDrain Current I = -34A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R =16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor IRF40R207, IIRF40R207FEATURESStatic drain-source on-resistance:RDS(on)5.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS

4N65650V N-Channel Power MOSFET RDS(ON)