FCX491 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCX491
Código: N1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar FCX491
FCX491 Datasheet (PDF)
fcx491.pdf
A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 60V Case: SOT89 IC = 1A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 RCE(sat) = 195m for a Low Equivalent On-Resistance Moisture
fcx491.pdf
FCX491NPN-General use transistor1W 1A 60V 4ApplicationsCan be used for switching and amplifying in various electrical and electronic equipments. 1 2 3SOT-89Max ratings Parameters Symbol RatingUnit VCEO 60 VCollectoremitter voltageIB=0 VCBO 80 VCollectorbase voltageIE=0 VEBO 5 VEmitter base voltageIC=0 IC 1 ACollector current
fcx491a.pdf
A Product Line ofDiodes IncorporatedFCX491A40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 40V Case: SOT89 IC = 1A high Continuous Current Case material: molded plastic. Green molding compound. Low saturation voltage VCE(sat)
fcx491a.pdf
FCX491A NPN Silicon Planar Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICM 2 ACollector Power Dissipation Ptot 1 WOperating and Storage Temperature Range Tj, Tstg - 65 to + 150 Charac
fcx493.pdf
A Product Line ofDiodes IncorporatedFCX493100V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 100V Case: SOT89 IC = 1A high Continuous Current Case Material: Molded Plastic, Green Molding Compound Low saturation voltage VCE(sat)
fcx493a.pdf
A Product Line ofDiodes IncorporatedFCX493A60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 60V Case: SOT89 IC = 1A high Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 High Gain device > 500 at IC =150mA Moisture Sensit
fcx495.pdf
FCX495 150V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 150V Case: SOT89 IC = 1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound; Low Saturation Voltage VCE(sat)
fcx495.pdf
SMD Type TransistorsNPN TransistorsFCX495 (KCX495)1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=150V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 170 Collector - Emitter Voltage VCEO 150 V Emitter - Base Voltage VEBO 5 C
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: PN3392 | MMBT2222AWT1G
History: PN3392 | MMBT2222AWT1G
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050