FK3300 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Doc No. TT4-EA-12576Revision. 3Product StandardsMOS FETFK3303010LFK3303010LSilicon N-channel MOS FETUnit : mm For switching1.2FK350301 in SSSMini3 type package 0.3 0.133 Features Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)120.2 0.52 Marking Symbol X1(0.4)(0.4)0.8 Packaging Em

This product complies with the RoHS Directive (EU 2002/95/EC).FK330301Silicon N-channel MOS FETFor switching circuits Overview PackageFK330301 is N-channel small signal MOS FET employed small size surface Codemounting package. SSSMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) 2: Source Small

Doc No. TT4-EA-14564Revision. 2Product StandardsMOS FETFK330308ELFK330308ELSilicon N-channel MOSFETUnit : mm For switching circuits1.20.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)120.2 0.52 Marking Symbol :X8(0.4)(0.4)0.8 PackagingEmbossed type (Thermo-

Doc No. TT4-EA-12592Revision. 2Product StandardsMOS FETFK3306010LFK3306010LSilicon N-channel MOSFETUnit : mm For switching1.2FK350601 in SSSMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :CV0.2 0.52(0.4)(0.4) Packaging0.8

Doc No. TT4-EA-14544Revision. 1Product StandardsMOS FETFK330307ELFK330307ELSilicon N-channel MOSFETUnit : mm For switching circuits1.20.3 0.133 Features Low drive voltage : 4.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)120.2 0.52 Marking Symbol :X7(0.4)(0.4)0.8 PackagingEmbossed type (Thermo-

This product complies with the RoHS Directive (EU 2002/95/EC).FK330601Silicon N-channel MOS FETFor switching circuits Overview PackageFK330601 is N-channel small signal MOS FET employed small size surface Codemounting package. SSSMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V) 2: Source High-s

Doc No. TT4-EA-14528Revision. 2Product StandardsMOS FETFK330309ELFK330309ELSilicon N-channel MOSFETUnit : mm For switching circuits1.20.3 0.133 Features Low drive voltage : 1.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)120.2 0.52 Marking Symbol :X9(0.4)(0.4)0.8 PackagingEmbossed type (Thermo-