FMMT4142
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMMT4142
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar FMMT4142
FMMT4142
Datasheet (PDF)
8.1. Size:376K diodes
fmmt413.pdf
FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 50A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 150V UL Flammability Classification Rating 94V-0 BVCEO > 50V Moisture Sensitivity: Level 1 per J-STD-020 Specifically designed for Av
8.2. Size:27K diodes
fmmt4126.pdf
SOT SI I O A A T 6S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I
8.3. Size:27K diodes
fmmt4124.pdf
SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I
8.4. Size:27K diodes
fmmt4125.pdf
SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I DA SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I
8.5. Size:27K diodes
fmmt4123.pdf
SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I
8.6. Size:534K diodes
fmmt415 fmmt417.pdf
FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 60A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BVCES > 260V (415) & 320V (417) UL Flammability Classification Rating 94V-0 BVCEO > 100V Moisture Sensitivity: Level 1 per J-STD-020
8.7. Size:386K htsemi
fmmt4124.pdf
FMMT4124TRANSISTOR (NPN) SOT23 FEATURES Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 200 mA PC Collector Power Dissipation 330 mW R T
8.8. Size:134K zetex
fmmt413.pdf
FMMT413SOT23 NPN silicon planar avalanche transistorSummaryV(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25ADescriptionThe FMMT413 is a NPN silicon planar bipolar transistor optimized foravalanche mode operation. Tight process control and low inductancepackaging combine to produce high current pulses with fast edges, idealfor laser diode driving.FeaturesC Avalanche mode opera
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.