FMMT4917
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMMT4917
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 450
MHz
Capacitancia de salida (Cc): 5
pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar FMMT4917
FMMT4917
Datasheet (PDF)
7.1. Size:493K diodes
fmmt491a.pdf
FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 40V Case: SOT23 Case Material: Molded Plastic, Green Molding Compound IC = 1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = 2A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 RCE(sat) = 195m for a
7.2. Size:359K diodes
fmmt491q.pdf
FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature Term
7.3. Size:387K diodes
fmmt491.pdf
A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case: SOT23 IC = 1A Continuous Collector Current Case Material: Molded plastic, Green Molding Compound ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 195m for a Low Equivalent On-Resistance
7.4. Size:472K mcc
fmmt491.pdf
FMMT491Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1NPN Silicon Planar Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSHigh PerformanceCompliant. See Ordering Information)TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55
7.5. Size:708K jiangsu
ad-fmmt491.pdf
www.jscj-elec.com AD-FMMT491 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT491 Plastic-Encapsulated Transistor AD-FMMT491 Transistor (NPN) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 491 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V 80 V CBOCollector-emitter vo
7.6. Size:3320K jiangsu
fmmt491.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR (NPN) FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Ba
7.7. Size:613K htsemi
fmmt491.pdf
FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW
7.8. Size:199K lge
fmmt491.pdf
FMMT491 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous
7.9. Size:379K wietron
fmmt491.pdf
FMMT491COLLECTOR3General Purpose Transistor NPN Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO 60 VCollector-Emitter Breakdown VoltageV(BR)CBO 80 VEmitter-Base Breakdown VoltageV(BR)EBOV 5.0Collector Current IC A 1.0Peak Pulse Current ICmA 2.0Power Dissipat
7.10. Size:487K first silicon
fmmt491.pdf
SEMICONDUCTORFMMT491TECHNICAL DATA FMMT491 TRANSISTOR (NPN) FEATURES Low equivalent on-resistance 3Marking :491 2MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO SOT23V Collector-Emitter Voltage 60 V CEOVEBO Emitter-Base Voltage 5 V COLLECTORIC Collector Current 1 A 3ICM Peak Pulse Current
7.11. Size:1401K kexin
fmmt491.pdf
SMD Type TransistorsNPN TransistorsFMMT491 (KMMT491)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VCE(sat) maximum specification improvement Reverse blocking specification improvement1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1C1.Base2.EmitterB3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
7.12. Size:1576K slkor
fmmt491.pdf
FMMT491NPN Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V
7.13. Size:1235K pjsemi
fmmt491.pdf
FMMT491NPN Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementaty with FMMT5911.Base 2.Emitter 3.CollectorMarking: 491Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 80 V CBOCollector Emitter Voltage V 60 V CEOEmitter Base Voltage V 5 V
7.14. Size:537K cn shikues
fmmt491.pdf
FMMT491TRANSISTOR (NPN) SOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 4 9 1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150
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