FMMT589 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A Product Line ofDiodes IncorporatedFMMT58930V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -30V Case: SOT23 Case Material: molded plastic, Green molding compound IC = -1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = -2A Peak Pulse Current Moisture Sensitivity: Level 1 pe

FMMT589PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor 1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage

August 2009FMMT549PNP Low Saturation TransistorFeatures ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from process PB.32SuperSOT-231Marking : 5491. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emi

A Product Line of Diodes Incorporated FMMT597 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -300V Case: SOT23 IC = -0.2A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM = -1A Peak Pulse Current UL Flammability Classification Rating 94V-0 Complementary NPN Type: FMMT497 Moisture

SOT SI I O A A T 088S A SI A T A SISTO S T 08 ISS S T T I D T I T 88 T 8 T T T 88 T 8 T 8 iI I A SO T A I ATI S T T 88 T 8 IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T 88 T 8 T I I IT DITI II V V I I V I II i V V I I V I II I V V I V V I i I V V I V V I i i V VV I I I

FMMT560Q500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This bipolar junction transistor (BJT) has been designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features

A Product Line ofDiodes IncorporatedFMMT59160V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -60V Case: SOT23 IC = -1A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RSAT = 295m for a Low Equivalent On-Resistanc

SOT23 PNP SILICON PLANARFMMT555MEDIUM POWER TRANSISTORISSUE 4 AUGUST 2003FEATURES* 150 Volt VCEO* 1 Amp continuous currentEC=IB2=IC/10COMPLEMENTARY TYPE FMMT455tfnsB1000PARTMARKING DETAIL 555800600tdns SOT23ABSOLUTE MAXIMUM RATINGS.400 100PARAMETER SYMBOL VALUE UNIT200 500 0Collector-Base Voltage VCBO -160 V-1Collector-Emitter Vo

A Product Line ofDiodes IncorporatedFMMT591A40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 IC = -1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)

FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -100V Case: SOT23 IC = -1A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage Moisture Sensitivity: Level 1 per J-STD-020 Excelle

A Product Line ofDiodes IncorporatedFMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -30V Case: SOT23 Maximum Continuous Collector Current IC = -1A UL Flammability Rating 94V-0 500mW power dissipation Case material: molded Plastic. Complementary type: Moisture Sensitivity: L

SOT SI I O A A T 0HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I V I II i V V I V I i V V I V I II I V V V V T V VV V T i 8 I V V T 8 I V V

SOT SI I O A A T 08 S A SI A T A SISTO T I D T I T 8 T 8 T T T 88A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II I V V I V V I i I V V I II i V V I I i V I i V 8 V I V V V I i 8 I V V T I V V i I V V T i i I V V T II i I I V V T i i

SOT23 NPN SILICON PLANARFMMT5209SMALL SIGNAL TRANSISTORSFMMT5210ISSUE 2 - JULY 1995 T I D T I T EC T BSOT23ABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V i II I Di i i i T T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II I V V I i I V V I II i V V I I i V I

A Product Line ofDiodes Incorporated FMMT558400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -400V Case: SOT23 IC = -150mA high Continuous Collector Current Case material: molded plastic. Green molding compound. ICM = -500mA Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity:

SOT SI I O A A T 00HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V

FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -500V Case: SOT23 IC = -150mA high Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM Up to -500mA Peak Pulse Current UL Flammability Classification Rating 94V-0 Excellent hFE Characteristics up to IC = -100mA Moisture Sensitivity

FMMT596SOT 23 PNP silicon planar high voltage transistorOrdering informationDevice Reel size Tape width Quantity(inches (mm) per reelFMMT596TA 7 8 3,000Device markingCE596CBBPinout - top viewEAbsolute maximum ratingsParameter Symbol Value UnitCollector-base voltage VCBO -220 VCollector-emitter voltage VCEO -200 VEmitter-base voltage VEBO -5 VPeak pulse cu

FMMT591Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-EncapsulateCompliant. See Ordering Information) Maximum Ratings @ 25 TransistorC Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150

FMMT593Features Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-EncapsulateCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Temperature Range: -55 to +150

FMMT591CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 80V A =(0.04 0.00

FMMT591DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 80V CEO6.22 0.13 A = 1.27 0.13I = 1A C(0.05

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOVCEO Collector-Emitter Voltage -60 V V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsFMMT593 TRANSISTOR (PNP)SO T-23FEATURES Complementary Type FMMT493MARKING:5931. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted)2. EMITTERSymbol Parameter Value Unit 3. COLLECTORV Collector-Base Voltage -120 V CBOV Collector-Emitter Voltage -100 V CEOV Emitter-Base Vo

www.jscj-elec.com AD-FMMT591 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT591 Plastic-Encapsulated Transistor AD-FMMT591 Transistor (PNP) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING : 591 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-FMMT591 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value U

FMMT591TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 5

FMMT593TRANSISTOR (PNP) SOT23 FEATURES Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBOV Collector-Emitter Voltage -100 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -1 A CPC Collector Power Dissipation 25

FMMT591 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesLow equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Conti

FMMT591COLLECTOR3General Purpose Transistor PNP Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO-60 VCollector-Emitter Breakdown VoltageV(BR)CBO-80 VEmitter-Base Breakdown VoltageV(BR)EBOV-5.0Collector Current IC A-1.0Peak Pulse Current ICmA-2.0Power Dissipat

FMMT593COLLECTOR3General Purpose Transistor PNP Silicon 3P b Lead(Pb)-Free11BASE2SOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Base Breakdown VoltageV(BR)CEO-120 VCollector-Emitter Breakdown VoltageV(BR)CBO-100 VEmitter-Base Breakdown VoltageV(BR)EBOV-5.0Collector Current IC A-1.0Power DissipationPD mW250TA=25CJunc

SMD Type TransistorsPNP TransistorsFMMT560 (KMMT560)SOT-23Unit: mm Features+0.12.9 -0.1+0.1 Collector Current Capability IC=-150mA 0.4 -0.13 Collector Emitter Voltage VCEO=-500V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

FMMT591PNP Silicon Epitaxial Planar TransistorFeaturesSOT-23 Low equivalent on-resistance Be complementary with FMMT4911.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5 V

FMMT591 PNP Transistor Features Low equivalent on-resistanceSOT-23 (TO-236) Be complementary with FMMT4911.Base 2.Emitter 3.CollectorMarking: 591Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 80 V CBOCollector Emitter Voltage -V 60 V CEOEmitter Base Voltage -V 5

FMMT593 PNP Transistor Features For switching and AF amplifier applications.SOT-23 (TO-236) As complementary type of the NPN transistorFMMT493 is recommended.1.Base 2.Emitter 3.CollectorMarking : 593Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 120 V CBOCollector