FT40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FT40
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 10 V
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1400 MHz
Capacitancia de salida (Cc): 1.9 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: TO46
Búsqueda de reemplazo de transistor bipolar FT40
FT40 Datasheet (PDF)
ixft40n85xhv ixfh40n85x.pdf
Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT40N85XHVPower MOSFET ID25 = 40AIXFH40N85X RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-
ixft40n50q.pdf
Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500
ixfh40n30q ixft40n30q.pdf
IXFH 40N30QHiPerFETTMVDSS = 300 VIXFT 40N30QPower MOSFETs ID25 = 40 AQ-Class RDS(on) = 80 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetTO-268 (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuous 20 VG(TAB)VGSM Transie
ixfh40n50q ixft40n50q.pdf
Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500
ixfh400n075t2-ixft400n075t2.pdf
Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 75VIXFH400N075T2ID25 = 400APower MOSFETIXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSS Con
ssft4003 ssft4003a.pdf
SSFT4003/SSFT4003AMain Product Characteristics: VDSS 40V RDS(on) 2.4m(typ.) ID 200A TO-220 TO-263 Schematic diagramSSFT4003 SSFT4003A Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssft4004.pdf
SSFT4004 Main Product Characteristics: VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A S che ma ti c di ag ra m TO220 Mar ki ng a nd p in Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and rever
ssft4002.pdf
SSFT4002 Main Product Characteristics: VDSS 40V SSFT4002SSFT4002SSFT3906SSFT3906RDS(on) 2.1 mohm ID 220A Features and Benefits: TO220 Marking and pin Schematic diagram Assignment Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capabil
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
