FT40 Todos los transistores

 0.1. Size:265K  ixys
 ixft40n85xhv ixfh40n85x.pdf

Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT40N85XHV Power MOSFET ID25 = 40A IXFH40N85X RDS(on) 145m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-

 0.2. Size:122K  ixys
 ixft40n50q.pdf

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs RDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500

 0.3. Size:50K  ixys
 ixfh40n30q ixft40n30q.pdf

IXFH 40N30Q HiPerFETTM VDSS = 300 V IXFT 40N30Q Power MOSFETs ID25 = 40 A Q-Class RDS(on) = 80 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet TO-268 (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V VGS Continuous 20 V G (TAB) VGSM Transie

 0.4. Size:123K  ixys
 ixfh40n50q ixft40n50q.pdf

Advanced Technical Information IXFH 40N50Q VDSS = 500 V HiPerFETTM IXFT 40N50Q ID25 = 40 A Power MOSFETs RDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500

 0.5. Size:188K  ixys
 ixfh400n075t2-ixft400n075t2.pdf

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 75V IXFH400N075T2 ID25 = 400A Power MOSFET IXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSS Con

 0.6. Size:500K  silikron
 ssft4003 ssft4003a.pdf

SSFT4003/SSFT4003A Main Product Characteristics VDSS 40V RDS(on) 2.4m (typ.) ID 200A TO-220 TO-263 Schematic diagram SSFT4003 SSFT4003A Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 0.7. Size:638K  silikron
 ssft4004.pdf

SSFT4004 Main Product Characteristics VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A S che ma ti c di ag ra m TO220 Mar ki ng a nd p in Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and rever

 0.8. Size:521K  silikron
 ssft4002.pdf

SSFT4002 Main Product Characteristics VDSS 40V SSFT4002 SSFT4002 SSFT3906 SSFT3906 RDS(on) 2.1 mohm ID 220A Features and Benefits TO220 Marking and pin Schematic diagram Assignment Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capabil