FXT553SM Todos los transistores

 

FXT553SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FXT553SM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 90 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT89

 Búsqueda de reemplazo de transistor bipolar FXT553SM

 

FXT553SM Datasheet (PDF)

 8.1. Size:26K  diodes
 fxt553.pdf

FXT553SM

PNP SILICON PLANARFXT553MEDIUM POWER TRANSISTORISSUE 1 FEB 94 T V I V i T T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I i i V I i V V I I V I II I V V

 9.1. Size:26K  diodes
 fxt555.pdf

FXT553SM

PNP SILICON PLANARFXT555MEDIUM POWER TRANSISTORISSUE 1 MARCH 94 T V I V i T T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V V I I V I i V V I I

 9.2. Size:26K  diodes
 fxt551.pdf

FXT553SM

PNP SILICON PLANARFXT551MEDIUM POWER TRANSISTORISSUE 1 SEPT 93 T V I V i T T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V 8 V I I V I II i V V I I i i V I i V V I I V I II I

 9.3. Size:25K  diodes
 fxt557.pdf

FXT553SM

PNP SILICON PLANARFXT557MEDIUM POWER TRANSISTORISSUE 1 MARCH 94 T V I V i T T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I

 9.4. Size:25K  diodes
 fxt550.pdf

FXT553SM

PNP SILICON PLANARFXT550MEDIUM POWER TRANSISTORISSUE 1 SEPT 93 T V I V i T T E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I I V I II i V V I I i i V I i V V I I V I II I V V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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