2N373 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N373
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08 W
Tensión colector-base (Vcb): 20 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 12 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 95
Paquete / Cubierta: TO7
- Selección de transistores por parámetros
2N373 Datasheet (PDF)
2n3738.pdf

2N3738MECHANICAL DATAPOWER TRANSISTORSDimensions in mmNPN SILICON6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.1 2FEATURES Hermetically Packaged. Low Saturation Voltage High Gain1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Package (TO-213AA)Pin 1 = Base Pin 2 = Emitter Case = CollectorA
2n3735csm4.pdf

2N3735CSM4Medium Current NPN Silicon AnnularTransistors Designed for High-SpeedSwitching and Driver Applications in aCeramic Surface Mount PackageMECHANICAL DATADimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009) High Voltage3 2 Ceramic Surface Mount Package0.234 1min
2n3734.pdf

2N3734Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 1.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Otros transistores... 2N3724 , 2N3724A , 2N3725 , 2N3725A , 2N3726 , 2N3727 , 2N3728 , 2N3729 , 13009 , 2N3730 , 2N3731 , 2N3732 , 2N3733 , 2N373-33 , 2N3734 , 2N3734A , 2N3734S .
History: 2SC780A | 2N6409 | BSP62T1 | BC298-6 | 2SCR543R | BDW44 | 2SC2944
History: 2SC780A | 2N6409 | BSP62T1 | BC298-6 | 2SCR543R | BDW44 | 2SC2944



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