2N373 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N373
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.08 W
Tensión colector-base (Vcb): 20 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 12 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 95
Paquete / Cubierta: TO7
Búsqueda de reemplazo de transistor bipolar 2N373
2N373 Datasheet (PDF)
2n3738.pdf
2N3738MECHANICAL DATAPOWER TRANSISTORSDimensions in mmNPN SILICON6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.1 2FEATURES Hermetically Packaged. Low Saturation Voltage High Gain1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Package (TO-213AA)Pin 1 = Base Pin 2 = Emitter Case = CollectorA
2n3735csm4.pdf
2N3735CSM4Medium Current NPN Silicon AnnularTransistors Designed for High-SpeedSwitching and Driver Applications in aCeramic Surface Mount PackageMECHANICAL DATADimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009) High Voltage3 2 Ceramic Surface Mount Package0.234 1min
2n3734.pdf
2N3734Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 1.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n3735l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M
2n3737ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M
2n3737.pdf
2N3737Silicon NPN TransistorData SheetDescription Applications General purpose Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual
Otros transistores... 2N3724 , 2N3724A , 2N3725 , 2N3725A , 2N3726 , 2N3727 , 2N3728 , 2N3729 , 2SD718 , 2N3730 , 2N3731 , 2N3732 , 2N3733 , 2N373-33 , 2N3734 , 2N3734A , 2N3734S .
