GF120 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GF120

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.075 W

Tensión colector-base (Vcb): 32 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO72

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GF120 datasheet

 0.1. Size:39K  1
apt11gf120brd.pdf pdf_icon

GF120

APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Cur

 0.2. Size:26K  1
apt50gf120hr.pdf pdf_icon

GF120

APT50GF120HR 1200V 62A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated

 0.3. Size:113K  1
apt33gf120b2rd apt33gf120lrd.pdf pdf_icon

GF120

APT33GF120B2RD/LRD APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C L

 0.4. Size:114K  apt
apt20gf120brd.pdf pdf_icon

GF120

APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247 Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Cur

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