GF120 Todos los transistores

 

GF120 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GF120
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.075 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO72
 

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GF120 Datasheet (PDF)

 0.1. Size:39K  1
apt11gf120brd.pdf pdf_icon

GF120

APT11GF120BRD1200V 22AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

 0.2. Size:26K  1
apt50gf120hr.pdf pdf_icon

GF120

APT50GF120HR1200V 62AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated

 0.3. Size:113K  1
apt33gf120b2rd apt33gf120lrd.pdf pdf_icon

GF120

APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L

 0.4. Size:114K  apt
apt20gf120brd.pdf pdf_icon

GF120

APT20GF120BRD1200V 32AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non- TO-247Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.G Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Cur

Otros transistores... GET9 , GET914 , GET929 , GET930 , GET931 , GF100 , GF105 , GF108 , 8050 , GF121 , GF122 , GF125 , GF126 , GF127 , GF128 , GF129 , GF130 .

History: 2SC2630 | BD643F | 2N4087

 

 
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