2SB1386-R Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1386-R
Código: BHR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 180
Encapsulados: SOT89
Búsqueda de reemplazo de 2SB1386-R
- Selecciónⓘ de transistores por parámetros
2SB1386-R datasheet
..1. Size:51K kexin
2sb1386-r.pdf 
SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5
6.1. Size:51K kexin
2sb1386-q.pdf
SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5
6.2. Size:51K kexin
2sb1386-p.pdf
SMD Type Transistors Low Frequency Transistor 2SB1386 Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -5
7.1. Size:155K rohm
2sb1386.pdf
Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor (96-141-B204) 211 Tra
7.2. Size:107K rohm
2sb1386 2sb1412 2sb1326.pdf
2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme
7.3. Size:209K utc
2sb1386.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Pin Assignment Order Number Package Packing 1 2 3 2SB1386G-x-AB3-R SOT-89 B C E Tape Reel Note Pin Assignment B Base C Collector E Emit
7.4. Size:507K secos
2sb1386.pdf
2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Low VCE(sat) 4 Excellent DC current gain characteristics Complements the 2SD2098 1 2 3 A E C CLASSIFICATION OF hFE Product-Rank 2SB1386-P 2SB1386-Q 2SB1386-R B D Range 82 180 120 270 180 39
7.5. Size:1154K jiangsu
2sb1386.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES Low collector saturation voltage 1. BASE Execllent current-to-gain characteristics 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO -30 V Collector-Base Voltage VCEO Col
7.6. Size:390K htsemi
2sb1386.pdf
2SB1 38 6 TRANSISTOR(PNP) FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -30 V Collector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 0.5 W TJ J
7.7. Size:280K lge
2sb1386.pdf
2SB1386 SOT-89 Transistor(PNP) 1. BASE SOT-89 1 2. COLLECTOR 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Low collector saturation voltage, 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Execllent current-to-gain characteristics 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters
7.8. Size:208K wietron
2sb1386.pdf
2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V VEBO -6 Collector to
7.9. Size:468K willas
2sb1386.pdf
FM120-M WILLAS 2SB1386THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d TRANSISTOR (PNP) eesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H SOT-89 Low p FEATURES mirofile surf
7.10. Size:577K semtech
st2sb1386u.pdf
ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation 2 2) Junction Tempera
7.11. Size:231K kexin
2sb1386.pdf
SMD Type Transistors PNP Transistors 2SB1386 Features 1.70 0.1 Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type 0.42 0.1 0.46 0.1 PNP silicon transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V E
7.12. Size:92K chenmko
2sb1386pgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SB1386PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (DPAK) DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability. .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) MARKING * hFE Classification P
7.13. Size:107K chenmko
2sb1386gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SB1386GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.6MAX. 1.7MAX.
Otros transistores... GS9011, GS9011D, GS9011E, GS9011F, GS9011G, GS9011H, GS9011I, GS9012, 13003, GS9012D, GS9012E, GS9012F, GS9013, 2SB1386-Q, GS9013D, GS9013E, GS9013F
