2N3815 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3815
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: TO89-3
Búsqueda de reemplazo de transistor bipolar 2N3815
2N3815 Datasheet (PDF)
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2n3819.pdf
2N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. Sourced from process 50.TO-9211. Drain 2. Gate 3. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 25
2n3819 2.pdf
2N3819Vishay SiliconixN-Channel JFETPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)v 8 25 2 2FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise: 3 dB @ 400 MHzD High Quality of Amplification D Sample-a
2n3819.pdf
2N3819JFET VHF/UHF AmplifierNChannel DepletionMAXIMUM RATINGShttp://onsemi.comRating Symbol Value UnitDrainSource Voltage VDS 25 Vdc3 DRAINDrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 Vdc2Drain Current ID 100 mAdcGATEForward Gate Current IG(f) 10 mAdcTotal Device Dissipation PD1 SOURCE@ TA = 25C 350 mWDerate above 25C 2.8 mW/CSt
2n3810 2n3811.pdf
TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices Qualified Level 2N3810 2N3811 JAN 2N3810L 2N3811L JANTX 2N3810U 2N3811U JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 50 mAdc IC One Both Section 1
2n3810u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L
2n3811l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L
2n3810l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L
2n3811u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN2N3810L
Otros transistores... 2N3810DCSM , 2N3811 , 2N3811A , 2N3811ADCSM , 2N3811DCSM , 2N3812 , 2N3813 , 2N3814 , 9014 , 2N3816 , 2N3816A , 2N3817 , 2N3817A , 2N3818 , 2N382 , 2N3825 , 2N3826 .
Liste
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