IMD10A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IMD10A  📄📄 

Código: D10

Material: Si

Polaridad de transistor: p*n

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SO6

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IMD10A datasheet

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IMD10A

IMD10A Transistors Power management (dual digital transistors) IMD10A Dimensions (Unit mm) Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power (4) (5) (6) dissipation. (3) (2) (1) ROHM SMT6 EIAJ SC-74 Each lead has same dimensions Package, marking, and packaging specification

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IMD10A

DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Mechanical Data Epitaxial Planar Die Construction Case SC-74R Built-In Biasing Resistors Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 One 500mA PNP and One 100mA NPN Moisture Sensitivity Level 1 per J-STD-020 Lead Free/RoHS Com

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IMD10A

MIMD10A MIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Epitaxial Planar Die Construction A SOT-363 Built-In Biasing Resistors Dim Min Max C2 B1 E1 One 500mA PNP and One 100mA NPN A 0.10 0.30 Lead Free/RoHS Compliant (Note 1) B C B 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 E2 B2 C1 D 0.65 Nominal Mechanical Data

 0.3. Size:58K  onsemi
imd10amt1g.pdf pdf_icon

IMD10A

IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor http //onsemi.com Network High Current IC = 500 mA max (3) (2) (1) This is a Pb-Free Device MAXIMUM RATINGS (TA = 25 C) R1 Q1 Rating Symbol Value Unit Q2 Collector-Base Voltage V(BR)CBO 50 Vdc R2 Collector-Emitter Voltage V(BR)CEO 50 Vdc R1 Emitter-Ba

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