2N3868 Todos los transistores

 

2N3868 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3868

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 60 MHz

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO5

Búsqueda de reemplazo de transistor bipolar 2N3868

 

2N3868 Datasheet (PDF)

1.1. 2n3868smd05.pdf Size:10K _upd

2N3868

2N3868SMD05 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm

1.2. 2n3868s.pdf Size:1098K _upd

2N3868
2N3868

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

 1.3. 2n3868u4.pdf Size:1098K _upd

2N3868
2N3868

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/350M shall be completed by 30 November 2015. 31 August 2015 SUPERSEDING MIL-PRF-19500/350L 5 July 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3868, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is

1.4. 2n3868smd.pdf Size:10K _upd

2N3868

2N3868SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 1A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 1.5. 2n3868.pdf Size:153K _cdil

2N3868
2N3868

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 60 V VCBO Collector Base Voltage 60 V VEBO Em

1.6. 2n3868.pdf Size:56K _microsemi

2N3868
2N3868

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3868 APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Silicon PNP Power Collector-Emitter Sustaining Voltage: VCEO(sus) = - 60 Vdc (Min) Transistors DC Current Gain: hFE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturat

Otros transistores... 2N3863 , 2N3864 , 2N3865 , 2N3866 , 2N3866A , 2N3866AUB , 2N3867 , 2N3867SM , 2N3906 , 2N3868SM , 2N3869 , 2N387 , 2N3876 , 2N3877 , 2N3877A , 2N3878 , 2N3879 .

 

 
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