2N387 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N387
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.1 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO27
Búsqueda de reemplazo de transistor bipolar 2N387
2N387 Datasheet (PDF)
2n3879smd05.pdf
2N3879SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm
2n3879smd.pdf
2N3879SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 75V IC = 7A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n3711 2n3721 2n3827 2n3858 2n3858a 2n3859 2n3859a 2n3860 2n3877 2n3877a 2n3900 2n3900a 2n3901 2n3903 2n3904 2n3905.pdf
2n3878.pdf
isc Silicon NPN Power Transistor 2N3878DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high speed switching and linear- amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2n3879.pdf
isc Silicon NPN Power Transistor 2N3879DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high speed switching and linear- amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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