KN4402S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KN4402S/4403STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES DIM MILLIMETERSComplementary to the KN4400S/4401S_+A 2.93 0.20B 1.30+0.20/-0.15Suffix U : Qualified to AEC-Q101.C 1.30 MAX23 D 0.40+0.15/-0.05ex) KN4403S-RTK/HUE 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K

SEMICONDUCTOR KN4402/4403TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CComplementary to KN4400/4401.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45_VCEO -40 VCollector-

SEMICONDUCTOR KN4400S/4401STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LDIM MILLIMETERS_+A 2.93 0.20FEATURES B 1.30+0.20/-0.15C 1.30 MAXComplementary to the KN4402S/4403S 23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Suffix U : Qualified to AEC-Q101.1G 1.90ex) KN4401S-RTK/HU H 0.95J 0.13+0.10/-0.05K 0

SEMICONDUCTOR KN4400/4401TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B C Complementary to KN4402/4403.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25 )C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 60 VG 0.85H 0.45VCEO _Collector-Emitter Vol