KSA1013 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSA1013
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.9 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 35 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar KSA1013

KSA1013 Datasheet (PDF)

..1. Size:55K fairchild semi
ksa1013.pdf

KSA1013Color TV Audio OutputColor TV Vertical Deflection OutputTO-92L11. Emitter 2. Collector 3. BasePNP EPITAXIAL SILICON TRANSISTORAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -160 VVEBO Emitter-Base Voltage -6 VIC Collector Current -1 AIB Base Current -0.5 AP

..2. Size:86K samsung
ksa1013.pdf

KSA1013 PNP EPITAXIAL SILICON TRANSISTORCOLOR TV AUDIO OUTPUTTO-92LCOLOR TV VERTICAL DEFLECTION OUTPUTABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -160 VCollector-Emitter Voltage VCEO -160 VEmitter-Base Voltage VEBO -6 VCollector Current IC -1 ABase Current IB -0.5 ACollector Dissipation PC 900 WJunction Temperature TJ

..3. Size:366K onsemi
ksa1013.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:50K fairchild semi
ksa1010.pdf

KSA1010High Speed High Voltage Switching Industrial Use Complement to KSC2334TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 100 VVCEO Collector-Emitter Voltage - 100 VVEBO Emitter-Base Voltage - 7 VIC Collector Current (DC) - 7 A

8.2. Size:42K fairchild semi
ksa1015.pdf

KSA1015LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V Complement to KSC1815TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -5 VIC Collector Current -

8.3. Size:228K onsemi
ksa1010.pdf