KSA1381
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSA1381
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 7
W
Tensión colector-base (Vcb): 300
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 3.1
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar KSA1381
KSA1381
Datasheet (PDF)
..1. Size:73K fairchild semi
ksa1381.pdf
KSA1381CRT Display, Video Output High Collector-Emitter Breakdown Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30VTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 300 VVCEO Collector-Emitter Voltage -
..2. Size:157K fairchild semi
ksa1381 2sa1381.pdf
March 20082SA1381/KSA1381PNP Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequenc
9.1. Size:56K fairchild semi
ksa1304.pdf
KSA1304Vertical Output ApplicationsPower Amplifier Applications Complement to KSC3296TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage - 150 VVCEO Collector-Emitter Voltage - 150 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 1
9.2. Size:38K fairchild semi
ksa1378.pdf
KSA1378Low Frequency Power Amplifier Collector Power Dissipation : PC= 300mW Complement to KSC3488TO-92S11.Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.