KSB1017R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSB1017R
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 9 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar KSB1017R

KSB1017R Datasheet (PDF)

7.1. Size:51K fairchild semi
ksb1017.pdf

KSB1017Power Amplifier Applications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 80 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 4 AIB Base Current - 0.4 APC Co

7.2. Size:213K onsemi
ksb1017.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:50K fairchild semi
ksb1015.pdf

KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement to KSD1406TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collecto

8.2. Size:212K onsemi
ksb1015.pdf