KSB1097Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSB1097Y
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar KSB1097Y

KSB1097Y Datasheet (PDF)

7.1. Size:47K fairchild semi
ksb1097.pdf

KSB1097Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1588TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collector Curre

8.1. Size:46K fairchild semi
ksb1098.pdf

KSB1098Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1589TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC Collect

9.1. Size:50K fairchild semi
ksb1015.pdf

KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement to KSD1406TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 60 VVEBO Emitter-Base Voltage - 7 VIC Collecto

9.2. Size:51K fairchild semi
ksb1017.pdf

KSB1017Power Amplifier Applications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage - 80 VVEBO Emitter-Base Voltage - 5 VIC Collector Current - 4 AIB Base Current - 0.4 APC Co

9.3. Size:46K fairchild semi
ksb1023.pdf

KSB1023Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSD1413TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 60 VVCEO Collector-Emitter Voltage - 40 VVEBO Emitter-Base

9.4. Size:212K onsemi
ksb1015.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.5. Size:213K onsemi
ksb1017.pdf