KSB1121R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSB1121R

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 32 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT89

 Búsqueda de reemplazo de KSB1121R

- Selecciónⓘ de transistores por parámetros

 

KSB1121R datasheet

 7.1. Size:430K  fairchild semi
ksb1121.pdf pdf_icon

KSB1121R

July 2005 KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity Fast Switching Speed Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Pa

 9.1. Size:52K  fairchild semi
ksb1116s.pdf pdf_icon

KSB1121R

KSB1116S Audio Frequency Power Amplifier & Medium Speed Switching TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -1 A ICP * Collector Curren

 9.2. Size:52K  fairchild semi
ksb1116 a.pdf pdf_icon

KSB1121R

KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage KSB1116 -60 V KSB1116A -80 V VCEO Collector-Emitter Voltage KSB1116 -50 V KSB111

 9.3. Size:46K  fairchild semi
ksb1149.pdf pdf_icon

KSB1121R

KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C High DC Current Gain High Power Dissipation PC=1.3W (Ta=25 C) TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEB

Otros transistores... KSB1116A, KSB1116AG, KSB1116AL, KSB1116AY, KSB1116G, KSB1116L, KSB1116Y, KSB1121, A940, KSB1121S, KSB1121T, KSB1121U, KSB1149, KSB1149O, KSB1149R, KSB1149Y, KSB1150