KSB1366Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSB1366Y

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 9 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220

 Búsqueda de reemplazo de KSB1366Y

- Selecciónⓘ de transistores por parámetros

 

KSB1366Y datasheet

 7.1. Size:50K  fairchild semi
ksb1366.pdf pdf_icon

KSB1366Y

KSB1366 LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current(DC) - 3 A IB Base Current - 0.

 7.2. Size:212K  onsemi
ksb1366.pdf pdf_icon

KSB1366Y

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:986K  semihow
ksb13003c.pdf pdf_icon

KSB1366Y

KSB13003C SEMIHOW REV.A0, January 2012 KSB13003C KSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E

 9.2. Size:528K  semihow
ksb13003ar.pdf pdf_icon

KSB1366Y

KSB13003AR KSB13003AR SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W 150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless

Otros transistores... KSB1150, KSB1151, KSB1151G, KSB1151O, KSB1151Y, KSB1330, KSB1366, KSB1366G, TIP42, KSB546, KSB546O, KSB546R, KSB546Y, KSB564, KSB564A, KSB564AG, KSB564AO