KSB1366Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KSB1366LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012TO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current(DC) - 3 A IB Base Current - 0.

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

KSB13003C SEMIHOW REV.A0, January 2012 KSB13003CKSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E

KSB13003ARKSB13003AR SEMIHOW REV.A2,Oct 2007KSB130003ARKSB13003ARHigh Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless

KSB13003H SEMIHOW REV.A0,Oct 2007 KSB13003HKSB13003H High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitte

KSB13003AKSB13003A SEMIHOW REV.A1,Oct 2007KSB130003AKSB13003AHigh Voltage Switch Mode Applicationgg pp High Speed Switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector3. EmitterCollector-B

KSB13002ARKSB13002AR SEMIHOW REV.A1,May 2008KSB130002ARKSB13002ARHigh Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)0.8 AmperesNPN Silicon Power Transistor Absolute M

KSB13003HRKSB13003HR SEMIHOW REV.A0,Oct 2007KSB130003HRKSB13003HRHigh Voltage Switch Mode Applicationgg pp High voltage, High speed power switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collect

KSB13003ERKSB13003ER SEMIHOW REV.A0,Apr 2008KSB130003ERKSB13003ERHigh Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute M

KSB13003CR SEMIHOW REV.A0, January 2012 KSB13003CRKSB13003CR High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector