KSC1008G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC1008G  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 0.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO92

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KSC1008G datasheet

 7.1. Size:149K  fairchild semi
 ksc1008.pdf pdf_icon

KSC1008G

September 2006 KSC1008 tm NPN Epitacial Silicon Transistor Features Low frequency amplifier medium speed switching. High Collector-Base Voltage VCBO=80V. Collector Current IC=700mA Collector Power Dissipation PC=800mW TO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.C

 7.2. Size:339K  onsemi
 ksc1008.pdf pdf_icon

KSC1008G

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 8.1. Size:37K  fairchild semi
 ksc1009.pdf pdf_icon

KSC1008G

KSC1009 High Voltage Amplifier High Collector-Base Voltage VCBO=160V Collector Current IC=700mA Collector Power Dissipation PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted S

Otros transistores... KSB834, KSB834O, KSB834Y, KSB906, KSB906O, KSB906Y, KSB907, KSC1008, TIP3055, KSC1008R, KSC1008Y, KSC1009, KSC1009G, KSC1009R, KSC1009Y, KSC1070, KSC1072