KSC1009R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC1009R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar KSC1009R
KSC1009R Datasheet (PDF)
ksc1009.pdf
KSC1009High Voltage Amplifier High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted S
ksc1008.pdf
September 2006KSC1008tmNPN Epitacial Silicon TransistorFeatures Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO=80V. Collector Current : IC=700mA Collector Power Dissipation : PC=800mWTO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.C
ksc1008.pdf
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Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
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