KSC2223O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSC2223O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 400 MHz
   Capacitancia de salida (Cc): 1 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO236

Búsqueda de reemplazo de transistor bipolar KSC2223O

KSC2223O Datasheet (PDF)

7.1. Size:69K fairchild semi
ksc2223.pdf

KSC2223High Frequency Amplifier Very small size to assure good space factor in Hybrid IC applications3 fT=600MHz (TYP) at IC=1mA Cob=1pF (TYP) at VCB=6V NF=3dB (TYP) at f=100MHz21 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Volta

7.2. Size:185K onsemi
ksc2223.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:42K fairchild semi
ksc2233.pdf

KSC2233B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO = 200V Collector Current (DC) : IC = 4A Collector Dissipation : PC = 40WTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60

9.2. Size:44K fairchild semi
ksc2258 ksc2258a.pdf

KSC2258/2258AHigh Voltage General Amplifier TV Video Output Amplifier High BVCEOTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : KSC2258 250 V : KSC2258A 300 VVCEO Collector-Emitter Voltage : KSC2258 250 V : KSC2258A 300 VVEBO

9.3. Size:21K samsung
ksc2233.pdf

KSC2233 NPN EPITAXIAL SILICON TRANSISTORB/W TV HORIZONTAL DEFLECTION OUTPUTTO-220 Collector-Base Voltage : VCBO = 200V Collector Current (D.C) : IC = 4A Collector Dissipation : PC = 40WABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitV Collector-Base Voltage VCBO 200V Collector-Emitter Voltage VCEO 60V Emitter-Base Voltage VEBO 5A Collector Current

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SD36

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050