KSC2331
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC2331
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 0.7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar KSC2331
KSC2331
Datasheet (PDF)
..1. Size:40K fairchild semi
ksc2331.pdf 
KSC2331Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1WTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage
..2. Size:64K samsung
ksc2331.pdf
KSC2331 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY AMPLIFIERTO-92LMEDIUM SPEED SWITCHING Complement to KSA931 High Collector-Base Voltage VCBO=80V Collector Current IC=700mA Collector Dissipation PC=1WABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 80 VCollector-Emitter Voltage VCEO 60 VEmitter-Base Voltage VE
..3. Size:196K lge
ksc2331.pdf
KSC2331 TO-92MOD Transistor (NPN)TO-92MOD1.EMITTER 12.COLLECTOR 2 3 3.BASE Features 5.8006.200 Complement to KSA931 8.400 High collector-Base Voltage: VCBO=80V 8.800 Collector current: IC=700mA 0.9001.100 Collector dissipation: P =1W C0.4000.600MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Parameter Value UnitsVCBO C
..4. Size:203K lge
ksc2331 to-92l.pdf
KSC2331 TO-92L Transistor (NPN)TO-92L1.EMITTER 2.COLLECTOR 4.7005.1003.BASE 2 3 1Features7.8008.200 Complement to KSA931 High collector-Base Voltage: VCBO=80V 0.6000.800Collector current: IC=700mA Collector dissipation: PC=1W 0.3500.55013.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 14.200Symbol Parameter Value UnitsVCBO Col
8.1. Size:38K fairchild semi
ksc2330a.pdf
KSC2330AColor TV Chroma Output Collector-Base Voltage : VCBO=400V Current Gain Bandwidth Product : fT=50MHz (TYP.)TO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 7
8.2. Size:52K fairchild semi
ksc2335.pdf
KSC2335High Speed, High Voltage Switching Industrial UseTO-2201NPN Epitaxial Silicon Transistor1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 A ICP *Collector Current (Puls
8.3. Size:37K fairchild semi
ksc2330.pdf
KSC2330Color TV Chroma Output Collector-Base Voltage : VCBO=300V Current Gain Bandwidth Product : fT=50MHz (TYP.)TO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 300 VVCEO Collector-Emitter Voltage 300 VVEBO Emitter-Base Voltage 7
8.4. Size:49K fairchild semi
ksc2334.pdf
KSC2334High Speed Switching Industrial Use Complement to KSA1010TO-2201NPN Epitaxial Silicon Transistor1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 AICP *Collector Current
8.5. Size:56K fairchild semi
ksc2333.pdf
KSC2333High Speed Switching Application Low Collector Saturation Voltage Specified of Reverse Biased SOA With Inductive LoadTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base
8.6. Size:50K samsung
ksc2330a.pdf
KSC2330A NPN EPITAXIAL SILICON TRANSISTORCOLOR TV CHROMA OUTPUTTO-92L Collector-Base Voltage VCBO=400V Current Gain-Bandwidth Product fT=50Mhz (TYP)ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 400 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 7 VCollector Current IC 100 mACollector Dissipation PC 1
8.7. Size:50K samsung
ksc2330.pdf
KSC2330 NPN EPITAXIAL SILICON TRANSISTORCOLOR TV CHROMA OUTPUTTO-92L Collector-Base Voltage VCBO=300V Current Gain-Bandwidth Product fT=50Mhz (TYP)ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 7 VCollector Current IC 100 mACollector Dissipation PC 1 mW
8.8. Size:230K onsemi
ksc2334.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.9. Size:158K inchange semiconductor
ksc2334.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC2334 DESCRIPTION With TO-220 package Complement to type KSA1010 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
