KSC2787Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC2787Y  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO92

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KSC2787Y datasheet

 7.1. Size:41K  fairchild semi
 ksc2787.pdf pdf_icon

KSC2787Y

KSC2787 FM/AM RF AMP, MIX, CONV, OSC, IF Collector-Emitter Voltage VCEO=30V High Current Gain Bandwidth Product fT=300MHz (TYP) Low Output Capacitance Cob=2.0pF (TYP) TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Co

 8.1. Size:40K  fairchild semi
 ksc2785.pdf pdf_icon

KSC2787Y

KSC2785 Audio Frequency Amplifier & High Frequency OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60V TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC

 8.2. Size:46K  fairchild semi
 ksc2784.pdf pdf_icon

KSC2787Y

KSC2784 Audio Frequency Low Noise Amplifier Complement to KSA1174 TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA PC

 8.3. Size:74K  fairchild semi
 ksc2786.pdf pdf_icon

KSC2787Y

KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product fT=600MHz (TYP) High Power Gain GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter

MOSTRAR MÁS

Otros transistores... KSC2785Y, KSC2786, KSC2786O, KSC2786R, KSC2786Y, KSC2787, KSC2787O, KSC2787R, 13003, KSC2859, KSC2859O, KSC2859Y, KSC2874, KSC2881O, KSC2881Y, KSC2883O, KSC2883Y