KSC2787Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSC2787Y
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar KSC2787Y

KSC2787Y Datasheet (PDF)

7.1. Size:41K fairchild semi
ksc2787.pdf

KSC2787FM/AM RF AMP, MIX, CONV, OSC, IF Collector-Emitter Voltage : VCEO=30V High Current Gain Bandwidth Product : fT=300MHz (TYP) Low Output Capacitance : Cob=2.0pF (TYP)TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VVCEO Co

8.1. Size:40K fairchild semi
ksc2785.pdf

KSC2785Audio Frequency Amplifier & High Frequency OSC. Complement to KSA1175 Collector-Base Voltage : VCBO=60VTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC

8.2. Size:46K fairchild semi
ksc2784.pdf

KSC2784Audio Frequency Low Noise Amplifier Complement to KSA1174TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 50 mAIB Base Current 10 mAPC

8.3. Size:74K fairchild semi
ksc2786.pdf

KSC2786TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product : fT=600MHz (TYP) High Power Gain : GPE=22dB at f=100MHzTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter

8.4. Size:53K samsung
ksc2785.pdf

KSC2785 NPN EPITAXIAL SILICON TRANSISTORAUDIO FREQUENCY AMPLIFIERTO-92SHIGH FREQUENCY OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60VABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current IC 150 mACollector Dissipation PC 250 mW

8.5. Size:152K samsung
ksc2786.pdf

KSC2786 NPN EPITAXIAL SILICON TRANSISTORTV PIF AMPLIFIER, FM TUNER RF AMPLIFIER,TO-92SMIXER, OSCILLATOR High Current-Gain-Bandwidth Product fT=600MHz (Typ) High Power Gain GPE=22dB at f=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 20 VEmitter-Base Voltage VEBO 4 VCollector Curr

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N3683 | 2N379 | 2SC181H

Liste

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