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KSC3076 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSC3076
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: I-PAK

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KSC3076 Datasheet (PDF)

 ..1. Size:24K  fairchild semi
ksc3076.pdf

KSC3076
KSC3076

KSC3076Power Amplifier Applications Low Collector-Emitter Saturation Voltage Complement to KSA 12411I-PACK1. Base 2. Collector 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 VIC Collector

 ..2. Size:14K  samsung
ksc3076.pdf

KSC3076

KSC3076 NPN EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER APPLICATIONSI-PACK Low Collector Emitter Saturation Voltage Complement to KSA 1241ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V1. Base 2. Collector 3. Emitter Emitter Base Voltage VEBO 5 V Base Current IB 1 A Collector Current IC

 8.1. Size:42K  fairchild semi
ksc3074.pdf

KSC3076
KSC3076

KSC3074High Power Switching Complement to KSA12441I-PACK1. Base 2. Collector 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 VIC Collector Current 5 AIB Base Current 1 A PC Collector Dissipa

 8.2. Size:40K  fairchild semi
ksc3073.pdf

KSC3076
KSC3076

KSC3073Power Amplifier Application Complement to KSA12431I-PAK1. Base 2. Collector 3. EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 VIC Collector Current 3 AIB Base Current 0.6 A PC Collector

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N3644 | 2N3783

 

 
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History: 2N3644 | 2N3783

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