KSC3552
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC3552
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150
W
Tensión colector-base (Vcb): 1100
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 215
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3P
Búsqueda de reemplazo de transistor bipolar KSC3552
KSC3552
Datasheet (PDF)
..1. Size:55K fairchild semi
ksc3552.pdf 
KSC3552High Voltage and High Reliabilty High Speed Switching Wide SOATO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 12 AICP Collector Current (
9.1. Size:153K fairchild semi
ksc3503 2sc3503.pdf
March 20082SC3503/KSC3503NPN Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequency:
9.2. Size:56K fairchild semi
ksc3503.pdf
KSC3503CRT Display, Video Output High Voltage : VCEO=300V Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30VTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V
9.3. Size:58K fairchild semi
ksc3502.pdf
KSC3502CRT Display, Video Output High Voltage : VCEO=200V Low Reverse Transfer Capacitance: Cre=1.2pF @ VCB=30VTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V
9.4. Size:57K fairchild semi
ksc3569.pdf
KSC3569High Speed Switching Application Low Collector Saturation Voltage Specified of Reverse Biased SOA With Inductive LoadsTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base
9.5. Size:242K onsemi
2sc3503 ksc3503.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
