KSC5086 Todos los transistores

 ..1. Size:64K  fairchild semi
 ksc5086 .pdf

KSC5086 HIgh Definition Color Display Horizontal Equivalent Circuit Deflection Output C (Damper Diode Built In) High Collector-Base Voltage BVCBO=1500V High Speed Switching tF=0.1 s (Typ.) B TO-3PF 1 50 typ. 1.Base 2.Collector 3.Emitter E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value

 ..2. Size:20K  samsung
 ksc5086.pdf

NPN TRIPLE DIFFUSED KSC5086 PLANAR SILICON TRANSISTOR HIGH DEFINITION COLOR DISPLAY TO-3PF HORIZONTAL DEFLECTION OUTPUT (DAMPER DIODE BUILT IN) High Collector -Base Voltage (VCBO=1500V) High Speed Switching (tf=0.1usec Typ) ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltag

 ..3. Size:130K  inchange semiconductor
 ksc5086.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5086 DESCRIPTION High Collector-Base Voltage- VCBO = 1500V(Min) High Switching Speed Built-in Damper Diode APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB

 8.1. Size:125K  inchange semiconductor
 ksc5089.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5089 DESCRIPTION High Collector-Base Voltage- VCBO = 1500V(Min) High Switching Speed APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1

 8.2. Size:103K  inchange semiconductor
 ksc5088.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5088 DESCRIPTION High Collector-Base Voltage- VCBO = 1500V(Min) High Switching Speed APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1

 9.1. Size:58K  fairchild semi
 ksc5024.pdf

KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (

 9.2. Size:302K  fairchild semi
 ksc5021.pdf

October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC C

 9.3. Size:142K  fairchild semi
 ksc5030f.pdf

KSC5030F High Voltage Fast Switching Transistor Features Fast Speed Switching Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 6 A ICP * Collector Current (Pulse) 20 A PC Collect

 9.4. Size:56K  fairchild semi
 ksc5042f.pdf

KSC5042F High Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliability TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150

 9.5. Size:54K  fairchild semi
 ksc5039.pdf

KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base

 9.6. Size:120K  fairchild semi
 ksc5026m.pdf

January 2011 KSC5026M NPN Silicon Transistor Features High Voltage and High Reliability High Speed Switching Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (D

 9.7. Size:38K  fairchild semi
 ksc5019.pdf

KSC5019 Low Saturation VCE(sat)=0.5V at IC=2A, IB=50mA TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 2 A

 9.8. Size:58K  fairchild semi
 ksc5039f.pdf

KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A

 9.9. Size:53K  fairchild semi
 ksc5027.pdf

KSC5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre

 9.10. Size:24K  samsung
 ksc5030pwd.pdf

KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25

 9.11. Size:74K  samsung
 ksc5027f.pdf

KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC

 9.12. Size:23K  samsung
 ksc5039.pdf

KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W 1.Base

 9.13. Size:72K  samsung
 ksc5021p.pdf

KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING tf = 0.1 (Typ) WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A 1.Base 2.Collec

 9.14. Size:24K  samsung
 ksc5039f.pdf

KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W

 9.15. Size:24K  samsung
 ksc5027.pdf

KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A 1.Base 2.Collector 3.Emitter

 9.16. Size:226K  onsemi
 ksc5026m.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:235K  onsemi
 ksc5027.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:109K  inchange semiconductor
 ksc5031.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5031 DESCRIPTION High Breakdown Voltage- V(BR)CBO= 1100V(Min) Fast Switching speed Wide Area of Safe Operation High Reliability APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag

 9.19. Size:87K  inchange semiconductor
 ksc5021.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 9.20. Size:215K  inchange semiconductor
 ksc5027f.pdf

isc Silicon NPN Power Transistor KSC5027F DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUT

 9.21. Size:116K  inchange semiconductor
 ksc5030f.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Col

 9.22. Size:138K  inchange semiconductor
 ksc5039.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO = 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collec

 9.23. Size:88K  inchange semiconductor
 ksc5027.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO