KSC5088
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC5088
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
ISOWATT218
Búsqueda de reemplazo de transistor bipolar KSC5088
KSC5088
Datasheet (PDF)
..1. Size:103K inchange semiconductor
ksc5088.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5088 DESCRIPTION High Collector-Base Voltage- : VCBO = 1500V(Min) High Switching Speed APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1
8.1. Size:64K fairchild semi
ksc5086 .pdf
KSC5086HIgh Definition Color Display Horizontal Equivalent CircuitDeflection Output C(Damper Diode Built In) High Collector-Base Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.)BTO-3PF150 typ. 1.Base 2.Collector 3.EmitterENPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value
8.2. Size:20K samsung
ksc5086.pdf
NPN TRIPLE DIFFUSEDKSC5086 PLANAR SILICON TRANSISTORHIGH DEFINITION COLOR DISPLAYTO-3PFHORIZONTAL DEFLECTION OUTPUT(DAMPER DIODE BUILT IN) High Collector -Base Voltage (VCBO=1500V) High Speed Switching (tf=0.1usec Typ)ABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltag
8.3. Size:130K inchange semiconductor
ksc5086.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5086 DESCRIPTION High Collector-Base Voltage- : VCBO = 1500V(Min) High Switching Speed Built-in Damper Diode APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCB
8.4. Size:125K inchange semiconductor
ksc5089.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5089 DESCRIPTION High Collector-Base Voltage- : VCBO = 1500V(Min) High Switching Speed APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1
Otros transistores... 2N3200
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, 2N3206
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.