KSD1047O Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSD1047O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 15 MHz
Capacitancia de salida (Cc): 210 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO3P
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KSD1047O datasheet
ksd1020.pdf
KSD1020 Audio Frequency Amplifier Complement to KSB810 TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (DC) 700 mA ICP * Collector Current (Puls
ksd1021.pdf
KSD1021 Audio Frequency Power Amplifier Complement to KSB811 Collector Current IC=1A Collector Dissipation PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Vo
ksd1021.pdf
KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92 Complement to KSB811 Collector Current IC=1A Collector Dissipation PC=350mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1 A Collector Dissipation
Otros transistores... KSD1020, KSD1020G, KSD1020Y, KSD1021, KSD1021G, KSD1021O, KSD1021Y, KSD1047, BD139, KSD1047Y, KSD1221, KSD1221G, KSD1221O, KSD1221Y, KSD1222, KSD1273, KSD1273O
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