KSD1616AG Todos los transistores

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KSD1616AG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSD1616AG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 19 pF

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar KSD1616AG

 

KSD1616AG Datasheet (PDF)

2.1. ksd1616a.pdf Size:242K _fairchild_semi

KSD1616AG
KSD1616AG

November 2007 KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage : KSD1616 60 V : KSD1616A 120 V VCEO Collector-Emitter Voltage : KSD1616 50 V : KSD1616A 60 V VEBO Emitter-Base Volt

3.1. ksd1616.pdf Size:54K _fairchild_semi

KSD1616AG
KSD1616AG

KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage : KSD1616 60 V : KSD1616A 120 V VCEO Collector-Emitter Voltage : KSD1616 50 V : KSD1616A 60 V

5.1. ksd1621.pdf Size:115K _fairchild_semi

KSD1616AG
KSD1616AG

August 2009 KSD1621 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grade Absolute Maximum Ratings TA = 25C unless otherwise noted S

5.2. ksd1691.pdf Size:47K _fairchild_semi

KSD1616AG
KSD1616AG

KSD1691 Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VE

5.3. ksd1692.pdf Size:50K _fairchild_semi

KSD1616AG
KSD1616AG

KSD1692 Feature High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25C) TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Sym- Parameter Value Units bol VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 10

5.4. ksd1691.pdf Size:205K _lge

KSD1616AG
KSD1616AG

KSD1691(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25В°C) 2.500 7.400 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) 3.200 10.600 0.000

5.5. ksd1691 to-126c.pdf Size:186K _lge

KSD1616AG
KSD1616AG

KSD1691 TO-126C Transistor (NPN) TO-126C 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25В°C) 3.000 7.800 3.400 8.200 1.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) 2.200 4.040 4.240 Symbol Parameter Value Units

Otros transistores... KSD1588R , KSD1588Y , KSD1589 , KSD1589O , KSD1589R , KSD1589Y , KSD1616 , KSD1616A , 2N4401 , KSD1616AL , KSD1616AY , KSD1616G , KSD1616L , KSD1621 , KSD1621R , KSD1621S , KSD1621T .

 


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