KSD880Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSD880Y

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Capacitancia de salida (Cc): 70 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220

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KSD880Y datasheet

 8.1. Size:59K  fairchild semi
 ksd880.pdf pdf_icon

KSD880Y

KSD880 Low Frequency Power Amplifier Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector

 8.2. Size:176K  onsemi
 ksd880.pdf pdf_icon

KSD880Y

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:209K  inchange semiconductor
 ksd880w.pdf pdf_icon

KSD880Y

isc Silicon NPN Power Transistor KSD880W DESCRIPTION Complement to KSB834W 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base

 8.4. Size:216K  inchange semiconductor
 ksd880.pdf pdf_icon

KSD880Y

isc Silicon NPN Power Transistor KSD880 DESCRIPTION Collector-Emitter sustaining Voltage V =60V(Min) CEO Good Linearity of h FE Complement to KSB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

MOSTRAR MÁS

Otros transistores... KSD794AR, KSD794AY, KSD794O, KSD794R, KSD794Y, KSD880, KSD880G, KSD880O, 2SC5198, KSD882, KSD882G, KSD882O, KSD882R, KSD882Y, KSD985, KSD985O, KSD985R