KSD882Y Todos los transistores

 8.1. Size:131K  fairchild semi
 ksd882.pdf

November 2007 KSD882 NPN Epitaxial Silicon Transistor Recommended Applications Audio Frequency Power Amplifier Featuers Low Speed Switcing TO-126 1 Complement to KSB772. 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 40 V BVCEO Collector-Emitter Voltage 30 V BVEBO E

 8.2. Size:212K  onsemi
 ksd882.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:59K  fairchild semi
 ksd880.pdf

KSD880 Low Frequency Power Amplifier Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector

 9.2. Size:176K  onsemi
 ksd880.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:209K  inchange semiconductor
 ksd880w.pdf

isc Silicon NPN Power Transistor KSD880W DESCRIPTION Complement to KSB834W 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base

 9.4. Size:216K  inchange semiconductor
 ksd880.pdf

isc Silicon NPN Power Transistor KSD880 DESCRIPTION Collector-Emitter sustaining Voltage V =60V(Min) CEO Good Linearity of h FE Complement to KSB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas