KSH2955I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSH2955I  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO252

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KSH2955I datasheet

 7.1. Size:49K  fairchild semi
 ksh2955.pdf pdf_icon

KSH2955I

KSH2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular KSE2955T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT =

 7.2. Size:23K  samsung
 ksh2955.pdf pdf_icon

KSH2955I

KSH2955 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER D-PAK LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, -I Suffix) 1 Electrically Similar to Popular KSE2955 DC Current Gain Specified to 10A High Current Gain - Bandwidth Product 1. Base 2.

 7.3. Size:249K  inchange semiconductor
 ksh2955.pdf pdf_icon

KSH2955I

isc Silicon PNP Power Transistor KSH2955 DESCRIPTION High DC current gain Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplifier low speed switching applicat

MOSTRAR MÁS

Otros transistores... KSH13003, KSH13003I, KSH200, KSH200I, KSH210, KSH210I, KSH29, KSH2955, TIP35C, KSH29C, KSH29CI, KSH29I, KSH30, KSH3055, KSH3055I, KSH30C, KSH30CI