KSH29I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSH29I
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar KSH29I
KSH29I Datasheet (PDF)
ksh29c.pdf
KSH29/29CGeneral Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP29 and TIP29CD-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Uni
ksh2955.pdf
KSH2955General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix)D-PAK I-PAK11 Electrically Similar to Popular KSE2955T1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product: fT =
ksh29.pdf
KSH29/29C NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERD-PAKLOW SPEED SWITCHING APPLICATIONSD-PACK FOR SURFACE MOUNTAPPLICATIONSLoad Formed for Surface Mount Application(No Suffix)Straight Lead (I.ACK, - I Suffi x)1Electrically Similar to Popular TIP29 and TIP29C1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitI-PAK
ksh2955.pdf
KSH2955 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERD-PAKLOW SPEED SWITCHING APPLICATONSD-PACK FOR SURFACE MOUNTAPPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, -I Suffix) 1 Electrically Similar to Popular KSE2955 DC Current Gain Specified to 10A High Current Gain - Bandwidth Product :1. Base 2.
ksh2955.pdf
isc Silicon PNP Power Transistor KSH2955DESCRIPTIONHigh DC current gainLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose amplifier low speed switching applicat
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: MJE29 | 2N5366 | 2N3053A | 3DD103 | KT8296B | KSA1378G | FZT600B
History: MJE29 | 2N5366 | 2N3053A | 3DD103 | KT8296B | KSA1378G | FZT600B
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050