KSH31C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSH31C  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO252

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KSH31C datasheet

 ..1. Size:252K  inchange semiconductor
 ksh31c.pdf pdf_icon

KSH31C

isc Silicon NPN Power Transistor KSH31C DESCRIPTION Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) Electrically similar to popular TIP31C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplifier low speed switching application ABSOLUTE MAXIMUM

 9.1. Size:55K  fairchild semi
 ksh31 c.pdf pdf_icon

KSH31C

KSH31/31C General Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Uni

 9.2. Size:24K  samsung
 ksh31.pdf pdf_icon

KSH31C

KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER D-PAK LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.ACK, - I Suffix) 1 Electrically Similar to Popular TIP31 and TIP31C 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit I-PAK

Otros transistores... KSH3055, KSH3055I, KSH30C, KSH30CI, KSH30I, KSH31, KSH3177, KSH3177I, C3198, KSH31CI, KSH31I, KSH32, KSH32C, KSH32CI, KSH32I, KSH340, KSH340I