KSH31I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSH31I  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO252

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KSH31I datasheet

 9.1. Size:55K  fairchild semi
 ksh31 c.pdf pdf_icon

KSH31I

KSH31/31C General Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Uni

 9.2. Size:24K  samsung
 ksh31.pdf pdf_icon

KSH31I

KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER D-PAK LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS Load Formed for Surface Mount Application(No Suffix) Straight Lead (I.ACK, - I Suffix) 1 Electrically Similar to Popular TIP31 and TIP31C 1. Base 2. Collector 3. Emitter ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit I-PAK

 9.3. Size:252K  inchange semiconductor
 ksh31c.pdf pdf_icon

KSH31I

isc Silicon NPN Power Transistor KSH31C DESCRIPTION Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) Electrically similar to popular TIP31C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplifier low speed switching application ABSOLUTE MAXIMUM

Otros transistores... KSH30C, KSH30CI, KSH30I, KSH31, KSH3177, KSH3177I, KSH31C, KSH31CI, A1013, KSH32, KSH32C, KSH32CI, KSH32I, KSH340, KSH340I, KSH350, KSH350I