KSH31I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSH31I
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar KSH31I
KSH31I Datasheet (PDF)
ksh31 c.pdf
KSH31/31CGeneral Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31CD-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Uni
ksh31.pdf
KSH31/31C NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERD-PAKLOW SPEED SWITCHING APPLICATIONSD-PACK FOR SURFACE MOUNTAPPLICATIONSLoad Formed for Surface Mount Application(No Suffix)Straight Lead (I.ACK, - I Suffix)1Electrically Similar to Popular TIP31 and TIP31C1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitI-PAK
ksh31c.pdf
isc Silicon NPN Power Transistor KSH31CDESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)Electrically similar to popular TIP31C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose amplifier low speed switching applicationABSOLUTE MAXIMUM
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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