KSH350 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSH350  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO252

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KSH350 datasheet

 ..1. Size:43K  fairchild semi
 ksh350.pdf pdf_icon

KSH350

KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO

 ..2. Size:22K  samsung
 ksh350.pdf pdf_icon

KSH350

KSH350 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER TRANSISTORS D-PAK DPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead ( -I Suffix) 1 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 300 V Collector Emitter Voltage VCEO - 300 V I-PAK

 ..3. Size:250K  inchange semiconductor
 ksh350.pdf pdf_icon

KSH350

isc Silicon PNP Power Transistor KSH350 DESCRIPTION Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Otros transistores... KSH31CI, KSH31I, KSH32, KSH32C, KSH32CI, KSH32I, KSH340, KSH340I, 2N4401, KSH350I, KSH41, KSH41C, KSH41CI, KSH42, KSH42C, KSH42CI, KSH44H11