KSH350 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSH350
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO252

Búsqueda de reemplazo de transistor bipolar KSH350

KSH350 Datasheet (PDF)

..1. Size:43K fairchild semi
ksh350.pdf

KSH350High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO

..2. Size:22K samsung
ksh350.pdf

KSH350 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORSD-PAKDPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead ( -I Suffix)1ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO - 300 V Collector Emitter Voltage VCEO - 300 VI-PAK

..3. Size:250K inchange semiconductor
ksh350.pdf

isc Silicon PNP Power Transistor KSH350DESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMBT2222ALT1 | ESM141 | 2SC125 | 2N4299

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050