KSP10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSP10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 650 MHz
Capacitancia de salida (Cc): 0.3 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar KSP10
KSP10 Datasheet (PDF)
ksp10.pdf
KSP10VHF/UHF transistorTO-9211. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 3.0 VPC Collector Power Dissipation (Ta=25C) 350 mWDerate above 25C2.8 mW/CPC Collector Power D
ksp10.pdf
KST10/11 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSITORTO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 3.0 VCollector Dissipation (Ta=25 ) PC 350 mW Derate above 25 mW/ 2.8Collector Dissipation (Ta=25 ) WPC 1.0 Derate above 25 W/ 8.0Juncti
ksp10.pdf
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Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050