KSP10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSP10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 650 MHz
Capacitancia de salida (Cc): 0.3 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar KSP10
KSP10 Datasheet (PDF)
ksp10.pdf
KSP10VHF/UHF transistorTO-9211. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 3.0 VPC Collector Power Dissipation (Ta=25C) 350 mWDerate above 25C2.8 mW/CPC Collector Power D
ksp10.pdf
KST10/11 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSITORTO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 3.0 VCollector Dissipation (Ta=25 ) PC 350 mW Derate above 25 mW/ 2.8Collector Dissipation (Ta=25 ) WPC 1.0 Derate above 25 W/ 8.0Juncti
ksp10.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
