KSP2222 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSP2222
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO92
- Selección de transistores por parámetros
KSP2222 Datasheet (PDF)
ksp2222a.pdf

July 2006KSP2222AtmNPN General Purpose AmplifierFeatures Collector-Emitter Voltage: VCEO= 40V Collector Power Dissipation: PC (max)=625mW Available as PN2222A TO-921 2 31. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEB
ksp2222apfc.pdf

KSP2222A NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC(max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 70 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 625 m
ksp2222abu ksp2222ata ksp2222atf.pdf

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ksp2222a.pdf

TRANSISTOR KSP2222A MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 27V High switching speed VCBO 42V RoHS RoHS product PC 625mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BFT93R | BUT21C | 2N6557 | 3DG12 | BDY65 | MJE47 | BCX29
History: BFT93R | BUT21C | 2N6557 | 3DG12 | BDY65 | MJE47 | BCX29



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