KSR1010 Todos los transistores

 

KSR1010 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR1010

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO92

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KSR1010 datasheet

 ..1. Size:42K  samsung
 ksr1010.pdf pdf_icon

KSR1010

KSR1010 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR2010 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEB

 8.1. Size:20K  samsung
 ksr1012.pdf pdf_icon

KSR1010

KSR1012 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR2012 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEB

 8.2. Size:21K  samsung
 ksr1011.pdf pdf_icon

KSR1010

KSR1011 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR2011 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEB

 9.1. Size:42K  samsung
 ksr1008.pdf pdf_icon

KSR1010

KSR1008 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR2008 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo

MOSTRAR MÁS

Otros transistores... KSR1002, KSR1003, KSR1004, KSR1005, KSR1006, KSR1007, KSR1008, KSR1009, 2SD718, KSR1011, KSR1012, KSR1101, KSR1102, KSR1104, KSR1105, KSR1106, KSR1107

 

 

 

 

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