KSR1104 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSR1104
   Código: R04
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar KSR1104

KSR1104 Datasheet (PDF)

..1. Size:52K fairchild semi
ksr1104.pdf

KSR1104Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =47K, R2=47K) Complement to KSR21042SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1R04BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.1. Size:54K fairchild semi
ksr1107.pdf

KSR1107Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =22K, R2=47K) Complement to KSR21072SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1R07BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.2. Size:49K fairchild semi
ksr1109.pdf

KSR1109Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to KSR21092SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR09RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter

8.3. Size:53K fairchild semi
ksr1105.pdf

KSR1105Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=10K) Complement to KSR21052SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1R05BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.4. Size:68K samsung
ksr1106.pdf